Abstract
A spin-valve transistor (SVT) that employs hot electrons is shown to exhibit a huge magnetotransport effect at room temperature in small magnetic fields. The SVT is a ferromagnet-semiconductor hybrid structure in which hot electrons are injected into a NiFe/Au/Co spin valve, and collected on the other side with energy and momentum selection. This makes the collector current extremely sensitive to spin-dependent scattering. The hot-electron current output of the device changes by more than a factor of three in magnetic fields of only a few Oe, corresponding to a magnetocurrent above 200% at room temperature.
| Original language | English |
|---|---|
| Pages (from-to) | L1-L6 |
| Number of pages | 6 |
| Journal | Journal of magnetism and magnetic materials |
| Volume | 214 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 2000 |
Keywords
- n/a OA procedure
- Magnetotransport
- Spin valve
- Schottky barrier
- Hot electron
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