Low-Frequency Noise Characterization of Ultra-shallow Gate N-channel Junction Field Effect Transistors

G. Piccolo, F. Sarubbi, L.J.K. Vandamme, M. Macucci, T.L.M. Scholtes, Lis Karen Nanver

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    Abstract

    A recently developed technique for ultra shallow pn junction formation has been applied for the fabrication of ring-gate n-channel junction field effect devices (JFET) devices. Several different geometries, gate formation parameters and channel doping profiles have been realized and characterized with respect to I-V and C-V characteristics both on wafer and after packaging. Low-frequency noise measurements have been performed on packaged devices by mean of a cross-correlation scheme. Data have been compared both with that of similar devices fabricated in a standard process and with simulations results. The devices show good DC performance, and the transconductance values achieved, with respect of the channel dimensions, are notably high. No G-R noise was detected, but the devices yielded a high flicker noise component. This phenomenon is shown to be neither correlated to the device area nor to incidental trapping levels at the junction interface. It is therefore assumed that perimeter effects are decisive for the enhancement of the 1/f spectrum.
    Original languageUndefined
    Title of host publication10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE)
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages448-451
    Number of pages4
    ISBN (Print)978-90-73461-49-9
    Publication statusPublished - 29 Nov 2007
    Event10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007 - Veldhoven, Netherlands
    Duration: 29 Nov 200730 Nov 2007

    Publication series

    Name
    PublisherTechnology Foundation STW
    Number7

    Workshop

    Workshop10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007
    CountryNetherlands
    CityVeldhoven
    Period29/11/0730/11/07

    Keywords

    • EWI-11718
    • METIS-245933
    • IR-62110

    Cite this

    Piccolo, G., Sarubbi, F., Vandamme, L. J. K., Macucci, M., Scholtes, T. L. M., & Nanver, L. K. (2007). Low-Frequency Noise Characterization of Ultra-shallow Gate N-channel Junction Field Effect Transistors. In 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE) (pp. 448-451). Utrecht, The Netherlands: STW.