Low-Frequency noise in hot-carrier degraded MOSFETs

Cora Salm, Eric Hoekstra, Jay S. Kolhatkar, André J. Hof, Hans Wallinga, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Abstract

    Low frequency (LF) noise in MOSFETs originates mainly from traps at the Si/SiO2 interface. As hot carrier (HC) stressing is known to increase the interface trap density, the LF noise is also expected to increase. In this paper we quantify the noise increase resulting from hot carrier degradation. Furthermore we investigate two methods that could reduce LF noise, bias switching and deuterium passivation. The impact of these two measures on noise after hot carrier stressing are quantified for the first time.
    Original languageEnglish
    Title of host publication14th Workshop on Dielectrics in Microelectronics, WODIM 2006
    PublisherKoninklijke Nederlandse Academie van Wetenschappen
    Pages64-65
    Number of pages2
    Publication statusPublished - 26 Jun 2006
    Event14th Workshop on Dielectrics in Microelectronics, WoDiM 2006 - Santa Tecla, Italy
    Duration: 26 Jun 200628 Jun 2006
    Conference number: 14

    Workshop

    Workshop14th Workshop on Dielectrics in Microelectronics, WoDiM 2006
    Abbreviated titleWoDiM
    CountryItaly
    CitySanta Tecla
    Period26/06/0628/06/06

    Keywords

    • SC-ICRY: Integrated Circuit Reliability and Yield

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  • Cite this

    Salm, C., Hoekstra, E., Kolhatkar, J. S., Hof, A. J., Wallinga, H., & Schmitz, J. (2006). Low-Frequency noise in hot-carrier degraded MOSFETs. In 14th Workshop on Dielectrics in Microelectronics, WODIM 2006 (pp. 64-65). Koninklijke Nederlandse Academie van Wetenschappen.