Low frequency (LF) noise in MOSFETs originates mainly from traps at the Si/SiO2 interface. As hot carrier (HC) stressing is known to increase the interface trap density, the LF noise is also expected to increase. In this paper we quantify the noise increase resulting from hot carrier degradation. Furthermore we investigate two methods that could reduce LF noise, bias switching and deuterium passivation. The impact of these two measures on noise after hot carrier stressing are quantified for the first time.
|Title of host publication||14th Workshop on Dielectrics in Microelectronics, WODIM 2006|
|Publisher||Koninklijke Nederlandse Academie van Wetenschappen|
|Number of pages||2|
|Publication status||Published - 26 Jun 2006|
|Event||14th Workshop on Dielectrics in Microelectronics, WoDiM 2006 - Santa Tecla, Italy|
Duration: 26 Jun 2006 → 28 Jun 2006
Conference number: 14
|Workshop||14th Workshop on Dielectrics in Microelectronics, WoDiM 2006|
|Period||26/06/06 → 28/06/06|
- SC-ICRY: Integrated Circuit Reliability and Yield
Salm, C., Hoekstra, E., Kolhatkar, J. S., Hof, A. J., Wallinga, H., & Schmitz, J. (2006). Low-Frequency noise in hot-carrier degraded MOSFETs. In 14th Workshop on Dielectrics in Microelectronics, WODIM 2006 (pp. 64-65). Koninklijke Nederlandse Academie van Wetenschappen.