Low-Frequency noise in hot-carrier degraded MOSFETs

Cora Salm; Eric Hoekstra; Jay S. Kolhatkar; André J. Hof; Hans Wallinga; Jurriaan Schmitz

Low-Frequency noise in hot-carrier degraded MOSFETs

Cora Salm, Eric Hoekstra, Jay S. Kolhatkar, André J. Hof, Hans Wallinga, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Low frequency (LF) noise in MOSFETs originates mainly from traps at the Si/SiO2 interface. As hot carrier (HC) stressing is known to increase the interface trap density, the LF noise is also expected to increase. In this paper we quantify the noise increase resulting from hot carrier degradation. Furthermore we investigate two methods that could reduce LF noise, bias switching and deuterium passivation. The impact of these two measures on noise after hot carrier stressing are quantified for the first time.

Original language	English
Title of host publication	14th Workshop on Dielectrics in Microelectronics, WODIM 2006
Publisher	Koninklijke Nederlandse Academie van Wetenschappen
Pages	64-65
Number of pages	2
Publication status	Published - 26 Jun 2006
Event	14th Workshop on Dielectrics in Microelectronics, WoDiM 2006 - Santa Tecla, Italy Duration: 26 Jun 2006 → 28 Jun 2006 Conference number: 14

Workshop

Workshop	14th Workshop on Dielectrics in Microelectronics, WoDiM 2006
Abbreviated title	WoDiM
Country	Italy
City	Santa Tecla
Period	26/06/06 → 28/06/06

Keywords

SC-ICRY: Integrated Circuit Reliability and Yield

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@inproceedings{854bc23a3a514842b146deff7321828d,

title = "Low-Frequency noise in hot-carrier degraded MOSFETs",

abstract = "Low frequency (LF) noise in MOSFETs originates mainly from traps at the Si/SiO2 interface. As hot carrier (HC) stressing is known to increase the interface trap density, the LF noise is also expected to increase. In this paper we quantify the noise increase resulting from hot carrier degradation. Furthermore we investigate two methods that could reduce LF noise, bias switching and deuterium passivation. The impact of these two measures on noise after hot carrier stressing are quantified for the first time.",

keywords = "SC-ICRY: Integrated Circuit Reliability and Yield",

author = "Cora Salm and Eric Hoekstra and Kolhatkar, {Jay S.} and Hof, {Andr{\'e} J.} and Hans Wallinga and Jurriaan Schmitz",

year = "2006",

month = jun,

day = "26",

language = "English",

pages = "64--65",

booktitle = "14th Workshop on Dielectrics in Microelectronics, WODIM 2006",

publisher = "Koninklijke Nederlandse Academie van Wetenschappen",

note = "14th Workshop on Dielectrics in Microelectronics, WoDiM 2006, WoDiM ; Conference date: 26-06-2006 Through 28-06-2006",

}

Low-Frequency noise in hot-carrier degraded MOSFETs. / Salm, Cora; Hoekstra, Eric; Kolhatkar, Jay S.; Hof, André J.; Wallinga, Hans; Schmitz, Jurriaan.

14th Workshop on Dielectrics in Microelectronics, WODIM 2006. Koninklijke Nederlandse Academie van Wetenschappen, 2006. p. 64-65.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Low-Frequency noise in hot-carrier degraded MOSFETs

AU - Salm, Cora

AU - Hoekstra, Eric

AU - Kolhatkar, Jay S.

AU - Hof, André J.

AU - Wallinga, Hans

AU - Schmitz, Jurriaan

N1 - Conference code: 14

PY - 2006/6/26

Y1 - 2006/6/26

N2 - Low frequency (LF) noise in MOSFETs originates mainly from traps at the Si/SiO2 interface. As hot carrier (HC) stressing is known to increase the interface trap density, the LF noise is also expected to increase. In this paper we quantify the noise increase resulting from hot carrier degradation. Furthermore we investigate two methods that could reduce LF noise, bias switching and deuterium passivation. The impact of these two measures on noise after hot carrier stressing are quantified for the first time.

AB - Low frequency (LF) noise in MOSFETs originates mainly from traps at the Si/SiO2 interface. As hot carrier (HC) stressing is known to increase the interface trap density, the LF noise is also expected to increase. In this paper we quantify the noise increase resulting from hot carrier degradation. Furthermore we investigate two methods that could reduce LF noise, bias switching and deuterium passivation. The impact of these two measures on noise after hot carrier stressing are quantified for the first time.

KW - SC-ICRY: Integrated Circuit Reliability and Yield

M3 - Conference contribution

SP - 64

EP - 65

BT - 14th Workshop on Dielectrics in Microelectronics, WODIM 2006

PB - Koninklijke Nederlandse Academie van Wetenschappen

T2 - 14th Workshop on Dielectrics in Microelectronics, WoDiM 2006

Y2 - 26 June 2006 through 28 June 2006

ER -