Low-Frequency noise in hot-carrier degraded MOSFETs

Cora Salm, Eric Hoekstra, Jay S. Kolhatkar, André J. Hof, Hans Wallinga, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Abstract

    Low frequency (LF) noise in MOSFETs originates mainly from traps at the Si/SiO2 interface. As hot carrier (HC) stressing is known to increase the interface trap density, the LF noise is also expected to increase. In this paper we quantify the noise increase resulting from hot carrier degradation. Furthermore we investigate two methods that could reduce LF noise, bias switching and deuterium passivation. The impact of these two measures on noise after hot carrier stressing are quantified for the first time.
    Original languageEnglish
    Title of host publication14th Workshop on Dielectrics in Microelectronics, WODIM 2006
    PublisherKoninklijke Nederlandse Academie van Wetenschappen
    Pages64-65
    Number of pages2
    Publication statusPublished - 26 Jun 2006
    Event14th Workshop on Dielectrics in Microelectronics, WoDiM 2006 - Santa Tecla, Italy
    Duration: 26 Jun 200628 Jun 2006
    Conference number: 14

    Workshop

    Workshop14th Workshop on Dielectrics in Microelectronics, WoDiM 2006
    Abbreviated titleWoDiM
    CountryItaly
    CitySanta Tecla
    Period26/06/0628/06/06

    Fingerprint

    field effect transistors
    low frequencies
    traps
    passivity
    deuterium
    degradation

    Keywords

    • SC-ICRY: Integrated Circuit Reliability and Yield

    Cite this

    Salm, C., Hoekstra, E., Kolhatkar, J. S., Hof, A. J., Wallinga, H., & Schmitz, J. (2006). Low-Frequency noise in hot-carrier degraded MOSFETs. In 14th Workshop on Dielectrics in Microelectronics, WODIM 2006 (pp. 64-65). Koninklijke Nederlandse Academie van Wetenschappen.
    Salm, Cora ; Hoekstra, Eric ; Kolhatkar, Jay S. ; Hof, André J. ; Wallinga, Hans ; Schmitz, Jurriaan. / Low-Frequency noise in hot-carrier degraded MOSFETs. 14th Workshop on Dielectrics in Microelectronics, WODIM 2006. Koninklijke Nederlandse Academie van Wetenschappen, 2006. pp. 64-65
    @inproceedings{854bc23a3a514842b146deff7321828d,
    title = "Low-Frequency noise in hot-carrier degraded MOSFETs",
    abstract = "Low frequency (LF) noise in MOSFETs originates mainly from traps at the Si/SiO2 interface. As hot carrier (HC) stressing is known to increase the interface trap density, the LF noise is also expected to increase. In this paper we quantify the noise increase resulting from hot carrier degradation. Furthermore we investigate two methods that could reduce LF noise, bias switching and deuterium passivation. The impact of these two measures on noise after hot carrier stressing are quantified for the first time.",
    keywords = "SC-ICRY: Integrated Circuit Reliability and Yield",
    author = "Cora Salm and Eric Hoekstra and Kolhatkar, {Jay S.} and Hof, {Andr{\'e} J.} and Hans Wallinga and Jurriaan Schmitz",
    year = "2006",
    month = "6",
    day = "26",
    language = "English",
    pages = "64--65",
    booktitle = "14th Workshop on Dielectrics in Microelectronics, WODIM 2006",
    publisher = "Koninklijke Nederlandse Academie van Wetenschappen",

    }

    Salm, C, Hoekstra, E, Kolhatkar, JS, Hof, AJ, Wallinga, H & Schmitz, J 2006, Low-Frequency noise in hot-carrier degraded MOSFETs. in 14th Workshop on Dielectrics in Microelectronics, WODIM 2006. Koninklijke Nederlandse Academie van Wetenschappen, pp. 64-65, 14th Workshop on Dielectrics in Microelectronics, WoDiM 2006, Santa Tecla, Italy, 26/06/06.

    Low-Frequency noise in hot-carrier degraded MOSFETs. / Salm, Cora; Hoekstra, Eric; Kolhatkar, Jay S.; Hof, André J.; Wallinga, Hans; Schmitz, Jurriaan.

    14th Workshop on Dielectrics in Microelectronics, WODIM 2006. Koninklijke Nederlandse Academie van Wetenschappen, 2006. p. 64-65.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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    AU - Salm, Cora

    AU - Hoekstra, Eric

    AU - Kolhatkar, Jay S.

    AU - Hof, André J.

    AU - Wallinga, Hans

    AU - Schmitz, Jurriaan

    PY - 2006/6/26

    Y1 - 2006/6/26

    N2 - Low frequency (LF) noise in MOSFETs originates mainly from traps at the Si/SiO2 interface. As hot carrier (HC) stressing is known to increase the interface trap density, the LF noise is also expected to increase. In this paper we quantify the noise increase resulting from hot carrier degradation. Furthermore we investigate two methods that could reduce LF noise, bias switching and deuterium passivation. The impact of these two measures on noise after hot carrier stressing are quantified for the first time.

    AB - Low frequency (LF) noise in MOSFETs originates mainly from traps at the Si/SiO2 interface. As hot carrier (HC) stressing is known to increase the interface trap density, the LF noise is also expected to increase. In this paper we quantify the noise increase resulting from hot carrier degradation. Furthermore we investigate two methods that could reduce LF noise, bias switching and deuterium passivation. The impact of these two measures on noise after hot carrier stressing are quantified for the first time.

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    EP - 65

    BT - 14th Workshop on Dielectrics in Microelectronics, WODIM 2006

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    Salm C, Hoekstra E, Kolhatkar JS, Hof AJ, Wallinga H, Schmitz J. Low-Frequency noise in hot-carrier degraded MOSFETs. In 14th Workshop on Dielectrics in Microelectronics, WODIM 2006. Koninklijke Nederlandse Academie van Wetenschappen. 2006. p. 64-65