Abstract
| Original language | English |
|---|---|
| Title of host publication | 14th Workshop on Dielectrics in Microelectronics, WODIM 2006 |
| Publisher | Koninklijke Nederlandse Academie van Wetenschappen |
| Pages | 64-65 |
| Number of pages | 2 |
| Publication status | Published - 26 Jun 2006 |
| Event | 14th Workshop on Dielectrics in Microelectronics, WoDiM 2006 - Santa Tecla, Italy Duration: 26 Jun 2006 → 28 Jun 2006 Conference number: 14 |
Workshop
| Workshop | 14th Workshop on Dielectrics in Microelectronics, WoDiM 2006 |
|---|---|
| Abbreviated title | WoDiM |
| Country | Italy |
| City | Santa Tecla |
| Period | 26/06/06 → 28/06/06 |
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Keywords
- SC-ICRY: Integrated Circuit Reliability and Yield
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Low-Frequency noise in hot-carrier degraded MOSFETs. / Salm, Cora; Hoekstra, Eric; Kolhatkar, Jay S.; Hof, André J.; Wallinga, Hans; Schmitz, Jurriaan.
14th Workshop on Dielectrics in Microelectronics, WODIM 2006. Koninklijke Nederlandse Academie van Wetenschappen, 2006. p. 64-65.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
TY - GEN
T1 - Low-Frequency noise in hot-carrier degraded MOSFETs
AU - Salm, Cora
AU - Hoekstra, Eric
AU - Kolhatkar, Jay S.
AU - Hof, André J.
AU - Wallinga, Hans
AU - Schmitz, Jurriaan
PY - 2006/6/26
Y1 - 2006/6/26
N2 - Low frequency (LF) noise in MOSFETs originates mainly from traps at the Si/SiO2 interface. As hot carrier (HC) stressing is known to increase the interface trap density, the LF noise is also expected to increase. In this paper we quantify the noise increase resulting from hot carrier degradation. Furthermore we investigate two methods that could reduce LF noise, bias switching and deuterium passivation. The impact of these two measures on noise after hot carrier stressing are quantified for the first time.
AB - Low frequency (LF) noise in MOSFETs originates mainly from traps at the Si/SiO2 interface. As hot carrier (HC) stressing is known to increase the interface trap density, the LF noise is also expected to increase. In this paper we quantify the noise increase resulting from hot carrier degradation. Furthermore we investigate two methods that could reduce LF noise, bias switching and deuterium passivation. The impact of these two measures on noise after hot carrier stressing are quantified for the first time.
KW - SC-ICRY: Integrated Circuit Reliability and Yield
M3 - Conference contribution
SP - 64
EP - 65
BT - 14th Workshop on Dielectrics in Microelectronics, WODIM 2006
PB - Koninklijke Nederlandse Academie van Wetenschappen
ER -