Low-frequency noise in hot-carrier degraded nMOSFETs

Cora Salm; Eric Hoekstra; Jay S. Kolhatkar; André J. Hof; Hans Wallinga; Jurriaan Schmitz

doi:10.1016/j.microrel.2007.01.044

Low-frequency noise in hot-carrier degraded nMOSFETs

Cora Salm^*, Eric Hoekstra, Jay S. Kolhatkar, André J. Hof, Hans Wallinga, Jurriaan Schmitz

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › Academic › peer-review

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Abstract

This paper discusses the low-frequency (LF) noise in submicron nMOSFETs under controlled transistor aging by hot-carrier stress. Both traditional, steady-state LF noise as well as the LF noise under periodic large-signal excitation were found to increase upon device degradation, for both hydrogen passivated and deuterium passivated Si–SiO2 interfaces. As hot-carrier degradation is slower in deuterium- annealed MOSFETs, so is the increase of the noise in these devices. The noise-suppressing effect of periodic OFF switching is gradually lost during hot-carrier degradation, as the LF noise under periodic large-signal excitation increases more rapidly than the LF noise in steady-state.

Original language	English
Pages (from-to)	577-580
Number of pages	4
Journal	Microelectronics reliability
Volume	47
Issue number	4-5
DOIs	https://doi.org/10.1016/j.microrel.2007.01.044
Publication status	Published - Apr 2007
Event	14th Workshop on Dielectrics in Microelectronics, WoDiM 2006 - Santa Tecla, Italy Duration: 26 Jun 2006 → 28 Jun 2006 Conference number: 14

Keywords

SC-ICRY: Integrated Circuit Reliability and Yield

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10.1016/j.microrel.2007.01.044

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title = "Low-frequency noise in hot-carrier degraded nMOSFETs",

abstract = "This paper discusses the low-frequency (LF) noise in submicron nMOSFETs under controlled transistor aging by hot-carrier stress. Both traditional, steady-state LF noise as well as the LF noise under periodic large-signal excitation were found to increase upon device degradation, for both hydrogen passivated and deuterium passivated Si–SiO2 interfaces. As hot-carrier degradation is slower in deuterium- annealed MOSFETs, so is the increase of the noise in these devices. The noise-suppressing effect of periodic OFF switching is gradually lost during hot-carrier degradation, as the LF noise under periodic large-signal excitation increases more rapidly than the LF noise in steady-state.",

keywords = "SC-ICRY: Integrated Circuit Reliability and Yield",

author = "Cora Salm and Eric Hoekstra and Kolhatkar, {Jay S.} and Hof, {Andr{\'e} J.} and Hans Wallinga and Jurriaan Schmitz",

year = "2007",

month = apr,

doi = "10.1016/j.microrel.2007.01.044",

language = "English",

volume = "47",

pages = "577--580",

journal = "Microelectronics reliability",

issn = "0026-2714",

publisher = "Elsevier Ltd",

number = "4-5",

note = "14th Workshop on Dielectrics in Microelectronics, WoDiM 2006, WoDiM ; Conference date: 26-06-2006 Through 28-06-2006",

}

TY - JOUR

T1 - Low-frequency noise in hot-carrier degraded nMOSFETs

AU - Salm, Cora

AU - Hoekstra, Eric

AU - Kolhatkar, Jay S.

AU - Hof, André J.

AU - Wallinga, Hans

AU - Schmitz, Jurriaan

N1 - Conference code: 14

PY - 2007/4

Y1 - 2007/4

N2 - This paper discusses the low-frequency (LF) noise in submicron nMOSFETs under controlled transistor aging by hot-carrier stress. Both traditional, steady-state LF noise as well as the LF noise under periodic large-signal excitation were found to increase upon device degradation, for both hydrogen passivated and deuterium passivated Si–SiO2 interfaces. As hot-carrier degradation is slower in deuterium- annealed MOSFETs, so is the increase of the noise in these devices. The noise-suppressing effect of periodic OFF switching is gradually lost during hot-carrier degradation, as the LF noise under periodic large-signal excitation increases more rapidly than the LF noise in steady-state.

AB - This paper discusses the low-frequency (LF) noise in submicron nMOSFETs under controlled transistor aging by hot-carrier stress. Both traditional, steady-state LF noise as well as the LF noise under periodic large-signal excitation were found to increase upon device degradation, for both hydrogen passivated and deuterium passivated Si–SiO2 interfaces. As hot-carrier degradation is slower in deuterium- annealed MOSFETs, so is the increase of the noise in these devices. The noise-suppressing effect of periodic OFF switching is gradually lost during hot-carrier degradation, as the LF noise under periodic large-signal excitation increases more rapidly than the LF noise in steady-state.

KW - SC-ICRY: Integrated Circuit Reliability and Yield

U2 - 10.1016/j.microrel.2007.01.044

DO - 10.1016/j.microrel.2007.01.044

M3 - Conference article

SN - 0026-2714

VL - 47

SP - 577

EP - 580

JO - Microelectronics reliability

JF - Microelectronics reliability

IS - 4-5

T2 - 14th Workshop on Dielectrics in Microelectronics, WoDiM 2006

Y2 - 26 June 2006 through 28 June 2006

ER -

Low-frequency noise in hot-carrier degraded nMOSFETs

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Keywords

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