Low-frequency noise in hot-carrier degraded nMOSFETs

Cora Salm*, Eric Hoekstra, Jay S. Kolhatkar, André J. Hof, Hans Wallinga, Jurriaan Schmitz

*Corresponding author for this work

    Research output: Contribution to journalConference articleAcademicpeer-review

    2 Citations (Scopus)
    5 Downloads (Pure)


    This paper discusses the low-frequency (LF) noise in submicron nMOSFETs under controlled transistor aging by hot-carrier stress. Both traditional, steady-state LF noise as well as the LF noise under periodic large-signal excitation were found to increase upon device degradation, for both hydrogen passivated and deuterium passivated Si–SiO2 interfaces. As hot-carrier degradation is slower in deuterium- annealed MOSFETs, so is the increase of the noise in these devices. The noise-suppressing effect of periodic OFF switching is gradually lost during hot-carrier degradation, as the LF noise under periodic large-signal excitation increases more rapidly than the LF noise in steady-state.
    Original languageEnglish
    Pages (from-to)577-580
    Number of pages4
    JournalMicroelectronics reliability
    Issue number4-5
    Publication statusPublished - Apr 2007
    Event14th Workshop on Dielectrics in Microelectronics, WoDiM 2006 - Santa Tecla, Italy
    Duration: 26 Jun 200628 Jun 2006
    Conference number: 14


    • SC-ICRY: Integrated Circuit Reliability and Yield


    Dive into the research topics of 'Low-frequency noise in hot-carrier degraded nMOSFETs'. Together they form a unique fingerprint.

    Cite this