Low frequency noise in strained silicon nanowire array MOSFETs and tunnel-FETs

S. Richter, S. Vitusevich, S. Pud, J. Li, L. Knoll, S. Trellenkamp, A. Schäfer, S. Lenk, Q.T. Zhao, A. Offenhäusser, S. Mantl, K.K. Bourdelle

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Abstract

MOSFETs and Tunnel-FETs (TFETs) based on arrays of nanowires (NWs) with 10 × 10 nm2 cross-section have been fabricated with strained silicon on insulator substrates. MOSFET devices show near ideal subthreshold slope close to 60 mV/dec proving excellent channel control achieved by high-klmetal gate stack. As expected fundamental differences between MOSFETs and TFETs in current-voltage characteristics are observed and analyzed. Low frequency noise spectra are studied for both types of devices. The devices show different behavior in terms of noise spectral density as a function of the applied gate voltage. A Hooge parameter of α = 7.3 × 10-3 is derived for the NW MOSFETs.

Original languageEnglish
Title of host publicationESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference
Place of PublicationPiscataway, NJ
PublisherIEEE Computer Society Press
Pages256-259
Number of pages4
ISBN (Electronic)978-1-4799-0649-9
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event43rd European Solid-State Device Research Conference, ESSDERC 2013 - Bucharest, Romania
Duration: 16 Sep 201320 Sep 2013
Conference number: 43

Publication series

NameProceedings of the European Solid-State Device Research Conference (ESSDERC)
PublisherIEEE
Volume2013
ISSN (Print)1930-8876
ISSN (Electronic)2378-6558

Conference

Conference43rd European Solid-State Device Research Conference, ESSDERC 2013
Abbreviated titleESSDERC
CountryRomania
CityBucharest
Period16/09/1320/09/13

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