Low frequency noise in strained silicon nanowire array MOSFETs and tunnel-FETs

S. Richter; S. Vitusevich; S. Pud; J. Li; L. Knoll; S. Trellenkamp; A. Schäfer; S. Lenk; Q.T. Zhao; A. Offenhäusser; S. Mantl; K.K. Bourdelle

doi:10.1109/ESSDERC.2013.6818867

Low frequency noise in strained silicon nanowire array MOSFETs and tunnel-FETs

S. Richter
, S. Vitusevich
, S. Pud
, J. Li
, L. Knoll
, S. Trellenkamp
, A. Schäfer
, S. Lenk
, Q.T. Zhao
, A. Offenhäusser
, S. Mantl
, K.K. Bourdelle

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

Abstract

MOSFETs and Tunnel-FETs (TFETs) based on arrays of nanowires (NWs) with 10 × 10 nm² cross-section have been fabricated with strained silicon on insulator substrates. MOSFET devices show near ideal subthreshold slope close to 60 mV/dec proving excellent channel control achieved by high-klmetal gate stack. As expected fundamental differences between MOSFETs and TFETs in current-voltage characteristics are observed and analyzed. Low frequency noise spectra are studied for both types of devices. The devices show different behavior in terms of noise spectral density as a function of the applied gate voltage. A Hooge parameter of α = 7.3 × 10^-3 is derived for the NW MOSFETs.

Original language	English
Title of host publication	ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	256-259
Number of pages	4
ISBN (Electronic)	978-1-4799-0649-9
DOIs	https://doi.org/10.1109/ESSDERC.2013.6818867
Publication status	Published - 2013
Externally published	Yes
Event	43rd European Solid-State Device Research Conference, ESSDERC 2013 - Bucharest, Romania Duration: 16 Sept 2013 → 20 Sept 2013 Conference number: 43

Publication series

Name	Proceedings of the European Solid-State Device Research Conference (ESSDERC)
Publisher	IEEE
Volume	2013
ISSN (Print)	1930-8876
ISSN (Electronic)	2378-6558

Conference

Conference	43rd European Solid-State Device Research Conference, ESSDERC 2013
Abbreviated title	ESSDERC
Country/Territory	Romania
City	Bucharest
Period	16/09/13 → 20/09/13

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10.1109/ESSDERC.2013.6818867

Cite this

Richter, S., Vitusevich, S., Pud, S., Li, J., Knoll, L., Trellenkamp, S., Schäfer, A., Lenk, S., Zhao, Q. T., Offenhäusser, A., Mantl, S., & Bourdelle, K. K. (2013). Low frequency noise in strained silicon nanowire array MOSFETs and tunnel-FETs. In ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference (pp. 256-259). Article 6818867 (Proceedings of the European Solid-State Device Research Conference (ESSDERC); Vol. 2013). IEEE. https://doi.org/10.1109/ESSDERC.2013.6818867

@inproceedings{71517d175b364d27a797ad10dbb8317c,

title = "Low frequency noise in strained silicon nanowire array MOSFETs and tunnel-FETs",

abstract = "MOSFETs and Tunnel-FETs (TFETs) based on arrays of nanowires (NWs) with 10 × 10 nm2 cross-section have been fabricated with strained silicon on insulator substrates. MOSFET devices show near ideal subthreshold slope close to 60 mV/dec proving excellent channel control achieved by high-klmetal gate stack. As expected fundamental differences between MOSFETs and TFETs in current-voltage characteristics are observed and analyzed. Low frequency noise spectra are studied for both types of devices. The devices show different behavior in terms of noise spectral density as a function of the applied gate voltage. A Hooge parameter of α = 7.3 × 10-3 is derived for the NW MOSFETs.",

author = "S. Richter and S. Vitusevich and S. Pud and J. Li and L. Knoll and S. Trellenkamp and A. Sch{\"a}fer and S. Lenk and Q.T. Zhao and A. Offenh{\"a}usser and S. Mantl and K.K. Bourdelle",

year = "2013",

doi = "10.1109/ESSDERC.2013.6818867",

language = "English",

series = "Proceedings of the European Solid-State Device Research Conference (ESSDERC)",

publisher = "IEEE",

pages = "256--259",

booktitle = "ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference",

address = "United States",

note = "43rd European Solid-State Device Research Conference, ESSDERC 2013, ESSDERC ; Conference date: 16-09-2013 Through 20-09-2013",

}

Richter, S, Vitusevich, S, Pud, S, Li, J, Knoll, L, Trellenkamp, S, Schäfer, A, Lenk, S, Zhao, QT, Offenhäusser, A, Mantl, S & Bourdelle, KK 2013, Low frequency noise in strained silicon nanowire array MOSFETs and tunnel-FETs. in ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference., 6818867, Proceedings of the European Solid-State Device Research Conference (ESSDERC), vol. 2013, IEEE, Piscataway, NJ, pp. 256-259, 43rd European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, 16/09/13. https://doi.org/10.1109/ESSDERC.2013.6818867

Low frequency noise in strained silicon nanowire array MOSFETs and tunnel-FETs. / Richter, S.; Vitusevich, S.; Pud, S. et al.
ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference. Piscataway, NJ: IEEE, 2013. p. 256-259 6818867 (Proceedings of the European Solid-State Device Research Conference (ESSDERC); Vol. 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Low frequency noise in strained silicon nanowire array MOSFETs and tunnel-FETs

AU - Richter, S.

AU - Vitusevich, S.

AU - Pud, S.

AU - Li, J.

AU - Knoll, L.

AU - Trellenkamp, S.

AU - Schäfer, A.

AU - Lenk, S.

AU - Zhao, Q.T.

AU - Offenhäusser, A.

AU - Mantl, S.

AU - Bourdelle, K.K.

N1 - Conference code: 43

PY - 2013

Y1 - 2013

N2 - MOSFETs and Tunnel-FETs (TFETs) based on arrays of nanowires (NWs) with 10 × 10 nm2 cross-section have been fabricated with strained silicon on insulator substrates. MOSFET devices show near ideal subthreshold slope close to 60 mV/dec proving excellent channel control achieved by high-klmetal gate stack. As expected fundamental differences between MOSFETs and TFETs in current-voltage characteristics are observed and analyzed. Low frequency noise spectra are studied for both types of devices. The devices show different behavior in terms of noise spectral density as a function of the applied gate voltage. A Hooge parameter of α = 7.3 × 10-3 is derived for the NW MOSFETs.

AB - MOSFETs and Tunnel-FETs (TFETs) based on arrays of nanowires (NWs) with 10 × 10 nm2 cross-section have been fabricated with strained silicon on insulator substrates. MOSFET devices show near ideal subthreshold slope close to 60 mV/dec proving excellent channel control achieved by high-klmetal gate stack. As expected fundamental differences between MOSFETs and TFETs in current-voltage characteristics are observed and analyzed. Low frequency noise spectra are studied for both types of devices. The devices show different behavior in terms of noise spectral density as a function of the applied gate voltage. A Hooge parameter of α = 7.3 × 10-3 is derived for the NW MOSFETs.

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M3 - Conference contribution

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BT - ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference

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ER -

Richter S, Vitusevich S, Pud S, Li J, Knoll L, Trellenkamp S et al. Low frequency noise in strained silicon nanowire array MOSFETs and tunnel-FETs. In ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference. Piscataway, NJ: IEEE. 2013. p. 256-259. 6818867. (Proceedings of the European Solid-State Device Research Conference (ESSDERC)). doi: 10.1109/ESSDERC.2013.6818867

Low frequency noise in strained silicon nanowire array MOSFETs and tunnel-FETs

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