Low-frequency noise phenomena in switched MOSFETs

Arnoud P. van der Wel, Eric A.M. Klumperink, Jay S. Kolhatkar, Eric Hoekstra, Martijn F. Snoeij, Cora Salm, Hans Wallinga, Bram Nauta

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    62 Citations (Scopus)
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    In small-area MOSFETs widely used in analog and RF circuit design, low-frequency (LF) noise behavior is increasingly dominated by single-electron effects. In this paper, we review the limitations of current compact noise models which do not model such single-electron effects. We present measurement results that illustrate typical LF noise behavior in small-area MOSFETs, and a model based on Shockley–Read–Hall statistics to explain the behavior. Finally, we treat practical examples that illustrate the relevance of these effects to analog circuit design. To the analog circuit designer, awareness of these single-electron noise phenomena is crucial if optimal circuits are to be designed, especially since the effects can aid in low-noise circuit design if used properly, while they may be detrimental to performance if inadvertently applied.
    Original languageEnglish
    Pages (from-to)540-550
    Number of pages11
    JournalIEEE journal of solid-state circuits
    Issue number3
    Publication statusPublished - 2007


    • SC-ICRY: Integrated Circuit Reliability and Yield
    • Low-frequency noise
    • MOSFETs
    • Circuit noise
    • Semiconductor device noise
    • 1f noise
    • Noise reduction
    • Switching circuits
    • Circuit synthesis
    • Analog circuits
    • Noise measurement


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