A new class of integrated optical waveguide structures is presented, based on low cost CMOS compatible LPCVD processing. This technology allows for medium and high index contrast waveguides with very low channel attenuation. The geometry is basically formed by a rectangular cross-section silicon nitride (Si3N4) filled with and encapsulated by silicon dioxide (SiO2). The birefringence and minimal bend radius of the waveguide is completely controlled by the geometry of the waveguide layer structures. Experiments on typical geometries will be presented, showing excellent characteristics (channel attenuation ≤ 0.1 dB/cm, IL ≤ 1.5 dB, PDL ≤ 0.2 dB, Bg ≤ 1×10-4, bend radius « 1 mm).
|Publication status||Published - 2005|
|Event||10th Annual Symposium of the IEEE/LEOS Benelux Chapter 2005 - Mons, Belgium|
Duration: 1 Dec 2008 → 2 Dec 2008
Conference number: 10
|Conference||10th Annual Symposium of the IEEE/LEOS Benelux Chapter 2005|
|Period||1/12/08 → 2/12/08|
Megret, P. (Ed.), Heideman, R., Melloni, A., Wuilpart, M. (Ed.), Bette, S. (Ed.), Hoekman, M., ... Morichetti, F. (2005). Low loss, high contrast optical waveguides based on CMOS compatible LPCVD processing: technology and experimental results. 71-74. Paper presented at 10th Annual Symposium of the IEEE/LEOS Benelux Chapter 2005, Mons, Belgium.