Low noise p-channel JFETs for X-ray spectroscopy with silicon drift detectors

J. Šonský*, R. N. Koornneef, L. K. Nanver, G. W. Lubking, J. Huizenga, R. W. Hollander, C. W.E. Van Eijk

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

Abstract

We present noise performance of different p-channel JFETs fabricated by silicon-detector compatible technology. This JFET can be used as a front-end transistor of a resistor-less charge preamplifier for low energy X-ray detection. Our concern is the read-out of silicon drift detectors. Firstly, a fully implanted p-channe! JFET was fabricated by optimized DIMES-03 process (temperature budget of 950°C). The JFET is top-gate driven with W/L = 100/1. We have measured the white series noise of 2.9 nV/√Hz and the corner frequency of the 1/f noise of ∼500 Hz. This JFET is therefore a very good alternative for an external front-end transistor for low noise charge preamplifiers. To achieve further improvement, an integration of this JFET into the read-out anode of the drift detector is necessary. We present the modified DIMES-03 process which was used to fabricate p-JFETs on low- and high-ohmic wafers. The noise parameters measured on these JFETs will be discussed.

Original languageEnglish
Title of host publication2000 IEEE Nuclear Science Symposium
DOIs
Publication statusPublished - 1 Dec 2000
Externally publishedYes
EventIEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2000 - Lyon, France, Lyon, France
Duration: 15 Oct 200020 Oct 2000
http://nss2000.in2p3.fr/

Conference

ConferenceIEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2000
Abbreviated titleNSS/MIC
CountryFrance
CityLyon
Period15/10/0020/10/00
Internet address

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