Low noise p-channel JFETs for X-ray spectroscopy with silicon drift detectors

J. Šonský; R. N. Koornneef; L. K. Nanver; G. W. Lubking; J. Huizenga; R. W. Hollander; C. W.E. Van Eijk

doi:10.1109/NSSMIC.2000.949901

Low noise p-channel JFETs for X-ray spectroscopy with silicon drift detectors

J. Šonský^*, R. N. Koornneef, L. K. Nanver, G. W. Lubking, J. Huizenga, R. W. Hollander, C. W.E. Van Eijk

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

Abstract

We present noise performance of different p-channel JFETs fabricated by silicon-detector compatible technology. This JFET can be used as a front-end transistor of a resistor-less charge preamplifier for low energy X-ray detection. Our concern is the read-out of silicon drift detectors. Firstly, a fully implanted p-channe! JFET was fabricated by optimized DIMES-03 process (temperature budget of 950°C). The JFET is top-gate driven with W/L = 100/1. We have measured the white series noise of 2.9 nV/√Hz and the corner frequency of the 1/f noise of ∼500 Hz. This JFET is therefore a very good alternative for an external front-end transistor for low noise charge preamplifiers. To achieve further improvement, an integration of this JFET into the read-out anode of the drift detector is necessary. We present the modified DIMES-03 process which was used to fabricate p-JFETs on low- and high-ohmic wafers. The noise parameters measured on these JFETs will be discussed.

Original language	English
Title of host publication	2000 IEEE Nuclear Science Symposium
DOIs	https://doi.org/10.1109/NSSMIC.2000.949901
Publication status	Published - 1 Dec 2000
Externally published	Yes
Event	IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2000 - Lyon, France, Lyon, France Duration: 15 Oct 2000 → 20 Oct 2000 http://nss2000.in2p3.fr/

Conference

Conference	IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2000
Abbreviated title	NSS/MIC
Country/Territory	France
City	Lyon
Period	15/10/00 → 20/10/00
Internet address	http://nss2000.in2p3.fr/

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10.1109/NSSMIC.2000.949901

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title = "Low noise p-channel JFETs for X-ray spectroscopy with silicon drift detectors",

abstract = "We present noise performance of different p-channel JFETs fabricated by silicon-detector compatible technology. This JFET can be used as a front-end transistor of a resistor-less charge preamplifier for low energy X-ray detection. Our concern is the read-out of silicon drift detectors. Firstly, a fully implanted p-channe! JFET was fabricated by optimized DIMES-03 process (temperature budget of 950°C). The JFET is top-gate driven with W/L = 100/1. We have measured the white series noise of 2.9 nV/√Hz and the corner frequency of the 1/f noise of ∼500 Hz. This JFET is therefore a very good alternative for an external front-end transistor for low noise charge preamplifiers. To achieve further improvement, an integration of this JFET into the read-out anode of the drift detector is necessary. We present the modified DIMES-03 process which was used to fabricate p-JFETs on low- and high-ohmic wafers. The noise parameters measured on these JFETs will be discussed.",

author = "J. {\v S}onsk{\'y} and Koornneef, {R. N.} and Nanver, {L. K.} and Lubking, {G. W.} and J. Huizenga and Hollander, {R. W.} and {Van Eijk}, {C. W.E.}",

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doi = "10.1109/NSSMIC.2000.949901",

language = "English",

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T1 - Low noise p-channel JFETs for X-ray spectroscopy with silicon drift detectors

AU - Šonský, J.

AU - Koornneef, R. N.

AU - Nanver, L. K.

AU - Lubking, G. W.

AU - Huizenga, J.

AU - Hollander, R. W.

AU - Van Eijk, C. W.E.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - We present noise performance of different p-channel JFETs fabricated by silicon-detector compatible technology. This JFET can be used as a front-end transistor of a resistor-less charge preamplifier for low energy X-ray detection. Our concern is the read-out of silicon drift detectors. Firstly, a fully implanted p-channe! JFET was fabricated by optimized DIMES-03 process (temperature budget of 950°C). The JFET is top-gate driven with W/L = 100/1. We have measured the white series noise of 2.9 nV/√Hz and the corner frequency of the 1/f noise of ∼500 Hz. This JFET is therefore a very good alternative for an external front-end transistor for low noise charge preamplifiers. To achieve further improvement, an integration of this JFET into the read-out anode of the drift detector is necessary. We present the modified DIMES-03 process which was used to fabricate p-JFETs on low- and high-ohmic wafers. The noise parameters measured on these JFETs will be discussed.

AB - We present noise performance of different p-channel JFETs fabricated by silicon-detector compatible technology. This JFET can be used as a front-end transistor of a resistor-less charge preamplifier for low energy X-ray detection. Our concern is the read-out of silicon drift detectors. Firstly, a fully implanted p-channe! JFET was fabricated by optimized DIMES-03 process (temperature budget of 950°C). The JFET is top-gate driven with W/L = 100/1. We have measured the white series noise of 2.9 nV/√Hz and the corner frequency of the 1/f noise of ∼500 Hz. This JFET is therefore a very good alternative for an external front-end transistor for low noise charge preamplifiers. To achieve further improvement, an integration of this JFET into the read-out anode of the drift detector is necessary. We present the modified DIMES-03 process which was used to fabricate p-JFETs on low- and high-ohmic wafers. The noise parameters measured on these JFETs will be discussed.

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U2 - 10.1109/NSSMIC.2000.949901

DO - 10.1109/NSSMIC.2000.949901

M3 - Conference contribution

AN - SCOPUS:0034594163

SN - 0-7803-6503-8

BT - 2000 IEEE Nuclear Science Symposium

T2 - IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2000

Y2 - 15 October 2000 through 20 October 2000

ER -

Low noise p-channel JFETs for X-ray spectroscopy with silicon drift detectors

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