Abstract
High power excimer laser annealing is used to activate dopants implanted in polysilicon layers. Sheet resistances as low as 50 Ω/□ are achieved for thin polysilicon layers on oxide, and low ohmic contacts have been produced to implanted junctions elevated by a polysilicon layer. The influence of the thickness of either the poly or the underlying oxide is evaluated.
Original language | English |
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Title of host publication | 1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings |
Pages | 102-105 |
Number of pages | 4 |
DOIs | |
Publication status | Published - 1 Dec 1998 |
Externally published | Yes |
Event | 1998 5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China Duration: 21 Oct 1998 → 23 Oct 1998 Conference number: 5 |
Conference
Conference | 1998 5th International Conference on Solid-State and Integrated Circuit Technology |
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Country/Territory | China |
City | Beijing |
Period | 21/10/98 → 23/10/98 |