Low-ohmic contacts by excimer laser annealing of implanted polysilicon

Q.W. Ren*, M.R. van den Berg, L.K. Nanver, J. Slabbekoorn, C.C.G. Visser

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

High power excimer laser annealing is used to activate dopants implanted in polysilicon layers. Sheet resistances as low as 50 Ω/□ are achieved for thin polysilicon layers on oxide, and low ohmic contacts have been produced to implanted junctions elevated by a polysilicon layer. The influence of the thickness of either the poly or the underlying oxide is evaluated.

Original languageEnglish
Title of host publication1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings
Pages102-105
Number of pages4
DOIs
Publication statusPublished - 1 Dec 1998
Externally publishedYes
Event1998 5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China
Duration: 21 Oct 199823 Oct 1998
Conference number: 5

Conference

Conference1998 5th International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityBeijing
Period21/10/9823/10/98

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