Low- or high-angle Ar ion-beam etching to create ramp-type Josephson junctions

K. Verbist, O.I. Lebedev, G. van Tendeloo, M.A.J. Verhoeven, A.J.H.M. Rijnders, D.H.A. Blank

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Abstract

The dependence of the ramp geometry on high- or low-angle ion-beam etching, used to structure ramp-type Josephson junctions based on high- superconductors, is investigated by cross-section transmission electron microscopy. The surface quality, interfaces and crystal defects are analysed by high-resolution electron microscopy. Technical difficulties to reproducibly obtain the desired slope angle and shape make high-angle ion-beam etching less interesting although the surface quality is comparable and no systematic differences in electrical properties are observed.
Original languageEnglish
Pages (from-to)978-984
Number of pages7
JournalSuperconductor science and technology
Volume9
Issue number11
DOIs
Publication statusPublished - 1996

Fingerprint

ramps
Josephson junctions
Ion beams
Surface properties
Etching
ion beams
etching
Crystal defects
High resolution electron microscopy
Superconducting materials
ramps (structures)
Electric properties
Transmission electron microscopy
Geometry
defects
crystal defects
electron microscopy
electrical properties
slopes
transmission electron microscopy

Cite this

Verbist, K. ; Lebedev, O.I. ; van Tendeloo, G. ; Verhoeven, M.A.J. ; Rijnders, A.J.H.M. ; Blank, D.H.A. / Low- or high-angle Ar ion-beam etching to create ramp-type Josephson junctions. In: Superconductor science and technology. 1996 ; Vol. 9, No. 11. pp. 978-984.
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author = "K. Verbist and O.I. Lebedev and {van Tendeloo}, G. and M.A.J. Verhoeven and A.J.H.M. Rijnders and D.H.A. Blank",
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Low- or high-angle Ar ion-beam etching to create ramp-type Josephson junctions. / Verbist, K.; Lebedev, O.I.; van Tendeloo, G.; Verhoeven, M.A.J.; Rijnders, A.J.H.M.; Blank, D.H.A.

In: Superconductor science and technology, Vol. 9, No. 11, 1996, p. 978-984.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Low- or high-angle Ar ion-beam etching to create ramp-type Josephson junctions

AU - Verbist, K.

AU - Lebedev, O.I.

AU - van Tendeloo, G.

AU - Verhoeven, M.A.J.

AU - Rijnders, A.J.H.M.

AU - Blank, D.H.A.

PY - 1996

Y1 - 1996

N2 - The dependence of the ramp geometry on high- or low-angle ion-beam etching, used to structure ramp-type Josephson junctions based on high- superconductors, is investigated by cross-section transmission electron microscopy. The surface quality, interfaces and crystal defects are analysed by high-resolution electron microscopy. Technical difficulties to reproducibly obtain the desired slope angle and shape make high-angle ion-beam etching less interesting although the surface quality is comparable and no systematic differences in electrical properties are observed.

AB - The dependence of the ramp geometry on high- or low-angle ion-beam etching, used to structure ramp-type Josephson junctions based on high- superconductors, is investigated by cross-section transmission electron microscopy. The surface quality, interfaces and crystal defects are analysed by high-resolution electron microscopy. Technical difficulties to reproducibly obtain the desired slope angle and shape make high-angle ion-beam etching less interesting although the surface quality is comparable and no systematic differences in electrical properties are observed.

U2 - 10.1088/0953-2048/9/11/009

DO - 10.1088/0953-2048/9/11/009

M3 - Article

VL - 9

SP - 978

EP - 984

JO - Superconductor science and technology

JF - Superconductor science and technology

SN - 0953-2048

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ER -