Low- or high-angle Ar ion-beam etching to create ramp-type Josephson junctions

K. Verbist; O.I. Lebedev; G. van Tendeloo; M.A.J. Verhoeven; A.J.H.M. Rijnders; D.H.A. Blank

doi:10.1088/0953-2048/9/11/009

Low- or high-angle Ar ion-beam etching to create ramp-type Josephson junctions

K. Verbist, O.I. Lebedev, G. van Tendeloo, M.A.J. Verhoeven, A.J.H.M. Rijnders, D.H.A. Blank

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Abstract

The dependence of the ramp geometry on high- or low-angle ion-beam etching, used to structure ramp-type Josephson junctions based on high- superconductors, is investigated by cross-section transmission electron microscopy. The surface quality, interfaces and crystal defects are analysed by high-resolution electron microscopy. Technical difficulties to reproducibly obtain the desired slope angle and shape make high-angle ion-beam etching less interesting although the surface quality is comparable and no systematic differences in electrical properties are observed.

Original language	English
Pages (from-to)	978-984
Number of pages	7
Journal	Superconductor science and technology
Volume	9
Issue number	11
DOIs	https://doi.org/10.1088/0953-2048/9/11/009
Publication status	Published - 1996

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@article{79ff3b1a509b4a1585ce645efb21701e,

title = "Low- or high-angle Ar ion-beam etching to create ramp-type Josephson junctions",

abstract = "The dependence of the ramp geometry on high- or low-angle ion-beam etching, used to structure ramp-type Josephson junctions based on high- superconductors, is investigated by cross-section transmission electron microscopy. The surface quality, interfaces and crystal defects are analysed by high-resolution electron microscopy. Technical difficulties to reproducibly obtain the desired slope angle and shape make high-angle ion-beam etching less interesting although the surface quality is comparable and no systematic differences in electrical properties are observed.",

author = "K. Verbist and O.I. Lebedev and {van Tendeloo}, G. and M.A.J. Verhoeven and A.J.H.M. Rijnders and D.H.A. Blank",

year = "1996",

doi = "10.1088/0953-2048/9/11/009",

language = "English",

volume = "9",

pages = "978--984",

journal = "Superconductor science and technology",

issn = "0953-2048",

publisher = "Institute of Physics (IOP)",

number = "11",

}

TY - JOUR

T1 - Low- or high-angle Ar ion-beam etching to create ramp-type Josephson junctions

AU - Verbist, K.

AU - Lebedev, O.I.

AU - van Tendeloo, G.

AU - Verhoeven, M.A.J.

AU - Rijnders, A.J.H.M.

AU - Blank, D.H.A.

PY - 1996

Y1 - 1996

N2 - The dependence of the ramp geometry on high- or low-angle ion-beam etching, used to structure ramp-type Josephson junctions based on high- superconductors, is investigated by cross-section transmission electron microscopy. The surface quality, interfaces and crystal defects are analysed by high-resolution electron microscopy. Technical difficulties to reproducibly obtain the desired slope angle and shape make high-angle ion-beam etching less interesting although the surface quality is comparable and no systematic differences in electrical properties are observed.

AB - The dependence of the ramp geometry on high- or low-angle ion-beam etching, used to structure ramp-type Josephson junctions based on high- superconductors, is investigated by cross-section transmission electron microscopy. The surface quality, interfaces and crystal defects are analysed by high-resolution electron microscopy. Technical difficulties to reproducibly obtain the desired slope angle and shape make high-angle ion-beam etching less interesting although the surface quality is comparable and no systematic differences in electrical properties are observed.

U2 - 10.1088/0953-2048/9/11/009

DO - 10.1088/0953-2048/9/11/009

M3 - Article

SN - 0953-2048

VL - 9

SP - 978

EP - 984

JO - Superconductor science and technology

JF - Superconductor science and technology

IS - 11

ER -

Low- or high-angle Ar ion-beam etching to create ramp-type Josephson junctions

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