Low- or high-angle Ar ion-beam etching to create ramp-type Josephson junctions

K. Verbist, O.I. Lebedev, G. van Tendeloo, M.A.J. Verhoeven, A.J.H.M. Rijnders, D.H.A. Blank

Research output: Contribution to journalArticleAcademicpeer-review

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The dependence of the ramp geometry on high- or low-angle ion-beam etching, used to structure ramp-type Josephson junctions based on high- superconductors, is investigated by cross-section transmission electron microscopy. The surface quality, interfaces and crystal defects are analysed by high-resolution electron microscopy. Technical difficulties to reproducibly obtain the desired slope angle and shape make high-angle ion-beam etching less interesting although the surface quality is comparable and no systematic differences in electrical properties are observed.
Original languageEnglish
Pages (from-to)978-984
Number of pages7
JournalSuperconductor science and technology
Issue number11
Publication statusPublished - 1996


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