Low Phosphorus Concentrations in Si by Diffusion from Doped Oxide Layers

J. Middelhoek, J. Holleman

    Research output: Contribution to journalArticleAcademic

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    Abstract

    The diffusion of phosphorus into silicon from doped oxide layers, deposited at low temperatures, has been studied in order to achieve reproducible impurity distributions with surface concentrations varying from 5 × 1015 to 1018 atoms/cm3. Special attention has been given to the differences arising from indiffusion in an Formula or in an Formula ambient. The dependence on the temperature of the diffusion coefficients of phosphorus in silicon and in silicon dioxide is determined at a surface concentration of 5 × 1016 atoms/cm3.
    Original languageEnglish
    Pages (from-to)132-137
    JournalJournal of the Electrochemical Society
    Volume121
    Issue number1
    DOIs
    Publication statusPublished - 1974

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    Silicon
    Phosphorus
    Oxides
    Atoms
    Silicon Dioxide
    Silica
    Impurities
    Temperature

    Cite this

    Middelhoek, J. ; Holleman, J. / Low Phosphorus Concentrations in Si by Diffusion from Doped Oxide Layers. In: Journal of the Electrochemical Society. 1974 ; Vol. 121, No. 1. pp. 132-137.
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    Low Phosphorus Concentrations in Si by Diffusion from Doped Oxide Layers. / Middelhoek, J.; Holleman, J.

    In: Journal of the Electrochemical Society, Vol. 121, No. 1, 1974, p. 132-137.

    Research output: Contribution to journalArticleAcademic

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