Low-pressure chemical vapor deposition of pureb layers on silicon for p + n junction formation

K. R.C. Mok*, V. Mohammadi, L. K. Nanver, W. D. De Boer, A. H.G. Vlooswijk

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

Ultrashallow junctions were fabricated by chemical vapor deposition of pure boron (PureB) at 95 torr as opposed to atmospheric pressure deposition. The low pressure deposition process with hydrogen as carrier gas demonstrated to be a viable process for fabricating ideal diodes with low saturation current and no detrimental effects. The minimum deposition temperature for forming an ideal diode is 500 o C. In the 500 o C to 700 o C temperature regime, the saturation current density decreases with increasing deposition temperature. Diodes fabricated with PureB deposition at 400 o C show a superposition of p + n and Al-to-Si Schottky-like behavior. Depositing PureB at 95 torr results in a thicker layer than at atmospheric pressure, implying that hydrogen desorption from silicon surface is limiting in the reaction mechanism of the PureB deposition.

Original languageEnglish
Title of host publicationIWJT 2012 - 2012 12th International Workshop on Junction Technology
EditorsYu-Long Jiang, Xin-Ping Qu, Bing-Zong Li, Guo-Ping Ru
PublisherIEEE
Pages1-4
Number of pages4
ISBN (Electronic)9781467312578
DOIs
Publication statusPublished - 1 Jan 2012
Externally publishedYes
Event12th International Workshop on Junction Technology, IWJT 2012 - Shanghai, China
Duration: 14 May 201215 May 2012
Conference number: 12

Conference

Conference12th International Workshop on Junction Technology, IWJT 2012
Abbreviated titleIWJT 2012
CountryChina
CityShanghai
Period14/05/1215/05/12

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