Low pressure chemical vapour deposition at quasi-high flow

Jisk Holleman, Jan Middelhoek

    Research output: Contribution to journalArticleAcademic

    5 Citations (Scopus)
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    Abstract

    A new chemical vapour deposition (CVD) technique is presented. It is especially advantageous for the deposition of compound materials. The technique improves the uniformity and reproducibility of the deposition. The economical use of gaseous reactants is improved by a factor varying between 5 and 20. This is important in the case of expensive metal-organic CVD methods. The method consists in the manifold repetition of the following sequence: evacuation, filling and deposition in a horizontal tube reactor. The filling time of 50 ms is short compared with the deposition period 1 s. The advantages of the method are demostrated with results for the deposition of undoped, phosphorus-doped and boron-doped silicon and SiO2.
    Original languageEnglish
    Pages (from-to)295-309
    JournalThin solid films
    Volume114
    Issue number3
    DOIs
    Publication statusPublished - 1984

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