Low-Pressure CVD of Germanium-Silicon Films using Silane and Germane Sources

Alexeij Y. Kovalgin, J. Holleman, Cora Salm, P.H. Woerlee

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageEnglish
    Title of host publicationThin Film Transistor Technologies V
    Subtitle of host publicationproceedings of the international symposium
    Place of PublicationPennington, NJ
    Pages269-275
    Number of pages7
    Publication statusPublished - 22 Oct 2001
    Event5th Symposium on Thin Film Transistor Technologies, TFTT 2000 - Phoenix, United States
    Duration: 23 Oct 200025 Oct 2000
    Conference number: 5

    Publication series

    NameProceedings
    PublisherElectrochemical Society
    Volume2000-31

    Conference

    Conference5th Symposium on Thin Film Transistor Technologies, TFTT 2000
    Abbreviated titleTFTT
    CountryUnited States
    CityPhoenix
    Period23/10/0025/10/00

    Keywords

    • METIS-202143

    Cite this

    Kovalgin, A. Y., Holleman, J., Salm, C., & Woerlee, P. H. (2001). Low-Pressure CVD of Germanium-Silicon Films using Silane and Germane Sources. In Thin Film Transistor Technologies V: proceedings of the international symposium (pp. 269-275). (Proceedings; Vol. 2000-31). Pennington, NJ.