Low-Pressure CVD of Germanium-Silicon Films using Silane and Germane Sources

Alexeij Y. Kovalgin; J. Holleman; Cora Salm; P.H. Woerlee

Low-Pressure CVD of Germanium-Silicon Films using Silane and Germane Sources

Alexeij Y. Kovalgin, J. Holleman, Cora Salm, P.H. Woerlee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	English
Title of host publication	Thin Film Transistor Technologies V
Subtitle of host publication	proceedings of the international symposium
Place of Publication	Pennington, NJ
Pages	269-275
Number of pages	7
Publication status	Published - 22 Oct 2001
Event	5th Symposium on Thin Film Transistor Technologies, TFTT 2000 - Phoenix, United States Duration: 23 Oct 2000 → 25 Oct 2000 Conference number: 5

Publication series

Name	Proceedings
Publisher	Electrochemical Society
Volume	2000-31

Conference

Conference	5th Symposium on Thin Film Transistor Technologies, TFTT 2000
Abbreviated title	TFTT
Country/Territory	United States
City	Phoenix
Period	23/10/00 → 25/10/00

Keywords

METIS-202143

Cite this

@inproceedings{582f4732d53342069fabbef0a288d092,

title = "Low-Pressure CVD of Germanium-Silicon Films using Silane and Germane Sources",

keywords = "METIS-202143",

author = "Kovalgin, {Alexeij Y.} and J. Holleman and Cora Salm and P.H. Woerlee",

year = "2001",

month = oct,

day = "22",

language = "English",

isbn = "1-56677298-2",

series = "Proceedings",

publisher = "Electrochemical Society",

pages = "269--275",

booktitle = "Thin Film Transistor Technologies V",

note = "5th Symposium on Thin Film Transistor Technologies, TFTT 2000, TFTT ; Conference date: 23-10-2000 Through 25-10-2000",

}

Kovalgin, AY, Holleman, J, Salm, C & Woerlee, PH 2001, Low-Pressure CVD of Germanium-Silicon Films using Silane and Germane Sources. in Thin Film Transistor Technologies V: proceedings of the international symposium. Proceedings, vol. 2000-31, Pennington, NJ, pp. 269-275, 5th Symposium on Thin Film Transistor Technologies, TFTT 2000, Phoenix, Arizona, United States, 23/10/00.

Low-Pressure CVD of Germanium-Silicon Films using Silane and Germane Sources. / Kovalgin, Alexeij Y.; Holleman, J.; Salm, Cora et al.
Thin Film Transistor Technologies V: proceedings of the international symposium. Pennington, NJ, 2001. p. 269-275 (Proceedings; Vol. 2000-31).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Low-Pressure CVD of Germanium-Silicon Films using Silane and Germane Sources

AU - Kovalgin, Alexeij Y.

AU - Holleman, J.

AU - Salm, Cora

AU - Woerlee, P.H.

N1 - Conference code: 5

PY - 2001/10/22

Y1 - 2001/10/22

KW - METIS-202143

M3 - Conference contribution

SN - 1-56677298-2

T3 - Proceedings

SP - 269

EP - 275

BT - Thin Film Transistor Technologies V

CY - Pennington, NJ

T2 - 5th Symposium on Thin Film Transistor Technologies, TFTT 2000

Y2 - 23 October 2000 through 25 October 2000

ER -