Low-pressure CVD of Germanium-Silicon films using silane and germane sources

Alexeij Y. Kovalgin, J. Holleman, Cora Salm, P.H. Woerlee

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageUndefined
    Title of host publicationProceedings of the 198th Meeting of the Electrochemical Society
    Place of PublicationPhoenix, USA
    Pages-
    Publication statusPublished - 22 Oct 2000

    Keywords

    • METIS-113955

    Cite this

    Kovalgin, A. Y., Holleman, J., Salm, C., & Woerlee, P. H. (2000). Low-pressure CVD of Germanium-Silicon films using silane and germane sources. In Proceedings of the 198th Meeting of the Electrochemical Society (pp. -). Phoenix, USA.