Low-Stress Highly-Conductive In-Situ Boron Doped Ge0.7Si0.3 Films by LPCVD

    Research output: Contribution to journalArticleAcademicpeer-review

    4 Citations (Scopus)

    Abstract

    This paper reports on low pressure chemical vapor deposited in-situ boron doped polycrystalline germanium-silicon layers with 70% germanium content. The effect of diborane partial pressure on the properties of the GeSi alloy is investigated. The obtained high boron concentration results in resistivity values less than 1 m_-cm. The layers deposited at low partial pressures of B2H6 exhibit very low stress down to –3MPa.With increasing B2H6 partial pressure first the stress changes from tensile to compressive, followed by a phase transition from polycrystalline to amorphous. The highly doped, low stress poly-Ge0.7Si0.3 layers deposited at 430◦C are further applied in high-Q microelectromechanical resonators envisaged for above-IC integration with CMOS.
    Original languageUndefined
    Pages (from-to)P222-P226
    Number of pages5
    JournalECS journal of solid state science and technology
    Volume1
    Issue number5
    DOIs
    Publication statusPublished - 29 Aug 2012

    Keywords

    • EWI-22196
    • IR-81308
    • METIS-296078

    Cite this

    @article{2c4c15d7ee5b493f94b8077d7580eb6f,
    title = "Low-Stress Highly-Conductive In-Situ Boron Doped Ge0.7Si0.3 Films by LPCVD",
    abstract = "This paper reports on low pressure chemical vapor deposited in-situ boron doped polycrystalline germanium-silicon layers with 70{\%} germanium content. The effect of diborane partial pressure on the properties of the GeSi alloy is investigated. The obtained high boron concentration results in resistivity values less than 1 m_-cm. The layers deposited at low partial pressures of B2H6 exhibit very low stress down to –3MPa.With increasing B2H6 partial pressure first the stress changes from tensile to compressive, followed by a phase transition from polycrystalline to amorphous. The highly doped, low stress poly-Ge0.7Si0.3 layers deposited at 430◦C are further applied in high-Q microelectromechanical resonators envisaged for above-IC integration with CMOS.",
    keywords = "EWI-22196, IR-81308, METIS-296078",
    author = "S.N.R. Kazmi and Kovalgin, {Alexeij Y.} and Aarnink, {Antonius A.I.} and Cora Salm and Jurriaan Schmitz",
    note = "eemcs-eprint-22196",
    year = "2012",
    month = "8",
    day = "29",
    doi = "10.1149/2.008205jss",
    language = "Undefined",
    volume = "1",
    pages = "P222--P226",
    journal = "ECS journal of solid state science and technology",
    issn = "2162-8769",
    publisher = "The Electrochemical Society Inc.",
    number = "5",

    }

    Low-Stress Highly-Conductive In-Situ Boron Doped Ge0.7Si0.3 Films by LPCVD. / Kazmi, S.N.R.; Kovalgin, Alexeij Y.; Aarnink, Antonius A.I.; Salm, Cora; Schmitz, Jurriaan.

    In: ECS journal of solid state science and technology, Vol. 1, No. 5, 29.08.2012, p. P222-P226.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Low-Stress Highly-Conductive In-Situ Boron Doped Ge0.7Si0.3 Films by LPCVD

    AU - Kazmi, S.N.R.

    AU - Kovalgin, Alexeij Y.

    AU - Aarnink, Antonius A.I.

    AU - Salm, Cora

    AU - Schmitz, Jurriaan

    N1 - eemcs-eprint-22196

    PY - 2012/8/29

    Y1 - 2012/8/29

    N2 - This paper reports on low pressure chemical vapor deposited in-situ boron doped polycrystalline germanium-silicon layers with 70% germanium content. The effect of diborane partial pressure on the properties of the GeSi alloy is investigated. The obtained high boron concentration results in resistivity values less than 1 m_-cm. The layers deposited at low partial pressures of B2H6 exhibit very low stress down to –3MPa.With increasing B2H6 partial pressure first the stress changes from tensile to compressive, followed by a phase transition from polycrystalline to amorphous. The highly doped, low stress poly-Ge0.7Si0.3 layers deposited at 430◦C are further applied in high-Q microelectromechanical resonators envisaged for above-IC integration with CMOS.

    AB - This paper reports on low pressure chemical vapor deposited in-situ boron doped polycrystalline germanium-silicon layers with 70% germanium content. The effect of diborane partial pressure on the properties of the GeSi alloy is investigated. The obtained high boron concentration results in resistivity values less than 1 m_-cm. The layers deposited at low partial pressures of B2H6 exhibit very low stress down to –3MPa.With increasing B2H6 partial pressure first the stress changes from tensile to compressive, followed by a phase transition from polycrystalline to amorphous. The highly doped, low stress poly-Ge0.7Si0.3 layers deposited at 430◦C are further applied in high-Q microelectromechanical resonators envisaged for above-IC integration with CMOS.

    KW - EWI-22196

    KW - IR-81308

    KW - METIS-296078

    U2 - 10.1149/2.008205jss

    DO - 10.1149/2.008205jss

    M3 - Article

    VL - 1

    SP - P222-P226

    JO - ECS journal of solid state science and technology

    JF - ECS journal of solid state science and technology

    SN - 2162-8769

    IS - 5

    ER -