Abstract
This paper reports on low pressure chemical vapor deposited in-situ boron doped polycrystalline germanium-silicon layers with 70% germanium content. The effect of diborane partial pressure on the properties of the GeSi alloy is investigated. The obtained high boron concentration results in resistivity values less than 1 m_-cm. The layers deposited at low partial pressures of B2H6 exhibit very low stress down to –3MPa.With increasing B2H6 partial pressure first the stress changes from tensile to compressive, followed by a phase transition from polycrystalline to amorphous. The highly doped, low stress poly-Ge0.7Si0.3 layers deposited at 430◦C are further applied in high-Q microelectromechanical resonators envisaged for above-IC integration with CMOS.
Original language | Undefined |
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Pages (from-to) | P222-P226 |
Number of pages | 5 |
Journal | ECS journal of solid state science and technology |
Volume | 1 |
Issue number | 5 |
DOIs | |
Publication status | Published - 29 Aug 2012 |
Keywords
- EWI-22196
- IR-81308
- METIS-296078