Low Stress In Situ Boron Doped Poly SiGe Layers for MEMS Modular Integration with CMOS

    Research output: Contribution to journalArticleAcademicpeer-review

    2 Citations (Scopus)
    14 Downloads (Pure)

    Fingerprint

    Dive into the research topics of 'Low Stress In Situ Boron Doped Poly SiGe Layers for MEMS Modular Integration with CMOS'. Together they form a unique fingerprint.