Low-stress nitride as oxidation mask for submicrometre LOCOS isolation

H.W. Van Zeijl; L.K. Nanver; P.J. French

doi:10.1049/el:19950626

Low-stress nitride as oxidation mask for submicrometre LOCOS isolation

H.W. Van Zeijl, L.K. Nanver, P.J. French

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

A large reduction in the LOCOS bird's beak is obtained by using a thick silicon nitride layer as an oxidation mask. Stress induced damage of the devices is avoided by using low-stress silicon-rich nitride.

Original language	English
Pages (from-to)	927-929
Number of pages	3
Journal	Electronics letters
Volume	31
Issue number	11
DOIs	https://doi.org/10.1049/el:19950626
Publication status	Published - 25 May 1995
Externally published	Yes

Keywords

Oxidation
Semiconductor technology

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10.1049/el:19950626

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title = "Low-stress nitride as oxidation mask for submicrometre LOCOS isolation",

abstract = "A large reduction in the LOCOS bird's beak is obtained by using a thick silicon nitride layer as an oxidation mask. Stress induced damage of the devices is avoided by using low-stress silicon-rich nitride.",

keywords = "Oxidation, Semiconductor technology",

author = "{Van Zeijl}, H.W. and L.K. Nanver and P.J. French",

year = "1995",

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AU - Van Zeijl, H.W.

AU - Nanver, L.K.

AU - French, P.J.

PY - 1995/5/25

Y1 - 1995/5/25

N2 - A large reduction in the LOCOS bird's beak is obtained by using a thick silicon nitride layer as an oxidation mask. Stress induced damage of the devices is avoided by using low-stress silicon-rich nitride.

AB - A large reduction in the LOCOS bird's beak is obtained by using a thick silicon nitride layer as an oxidation mask. Stress induced damage of the devices is avoided by using low-stress silicon-rich nitride.

KW - Oxidation

KW - Semiconductor technology

U2 - 10.1049/el:19950626

DO - 10.1049/el:19950626

M3 - Article

AN - SCOPUS:0029308819

SN - 0013-5194

VL - 31

SP - 927

EP - 929

JO - Electronics letters

JF - Electronics letters

IS - 11

ER -

Low-stress nitride as oxidation mask for submicrometre LOCOS isolation

Abstract

Keywords

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