Low-stress nitride as oxidation mask for submicrometre LOCOS isolation

H.W. Van Zeijl, L.K. Nanver, P.J. French

Research output: Contribution to journalArticleAcademicpeer-review

4 Citations (Scopus)
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Abstract

A large reduction in the LOCOS bird's beak is obtained by using a thick silicon nitride layer as an oxidation mask. Stress induced damage of the devices is avoided by using low-stress silicon-rich nitride.

Original languageEnglish
Pages (from-to)927-929
Number of pages3
JournalElectronics letters
Volume31
Issue number11
DOIs
Publication statusPublished - 25 May 1995
Externally publishedYes

Keywords

  • Oxidation
  • Semiconductor technology

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