Low stress nitride as surface isolation in bipolar transistors

L. K. Nanver, P. J. French, E. J.G. Goudena, H. W. van Zeijl

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

Low stress silicon rich nitride SiNx has been examined as surface isolation in a 15 GHz washed emitter–base (WEB) bipolar process. The resistance of SiNx to wet etching in HF simplifies the processing and improves the control of device dimensions. The WEB process allows a direct comparison of device characteristics for several SiO2 and SiNx passivation layers. Films of SiNx with strain levels in the range 4×10−4–3×10−3 were developed using a micromachined test structure. Damage of the silicon surface, which induces emitter–collector shorts, is avoided by using very low stress nitride (strain < 1·8×10−3). The base leakage currents, which are associated with silicon/insulator interface traps, are not stress dependent but are characteristic of the type of isolation.

Original languageEnglish
Pages (from-to)36-40
Number of pages5
JournalMaterials Science and Technology (United Kingdom)
Volume11
Issue number1
DOIs
Publication statusPublished - 1 Jan 1995
Externally publishedYes

Fingerprint

Bipolar transistors
Silicon
bipolar transistors
Nitrides
nitrides
isolation
Wet etching
silicon
Passivation
silicon nitrides
Leakage currents
passivity
leakage
insulators
etching
traps
damage
Processing

Cite this

Nanver, L. K. ; French, P. J. ; Goudena, E. J.G. ; van Zeijl, H. W. / Low stress nitride as surface isolation in bipolar transistors. In: Materials Science and Technology (United Kingdom). 1995 ; Vol. 11, No. 1. pp. 36-40.
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Low stress nitride as surface isolation in bipolar transistors. / Nanver, L. K.; French, P. J.; Goudena, E. J.G.; van Zeijl, H. W.

In: Materials Science and Technology (United Kingdom), Vol. 11, No. 1, 01.01.1995, p. 36-40.

Research output: Contribution to journalArticleAcademicpeer-review

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