Low stress nitride as surface isolation in bipolar transistors

L.K. Nanver; P.J. French; E.J.G. Goudena; H.W. van Zeijl

doi:10.1179/mst.1995.11.1.36

Low stress nitride as surface isolation in bipolar transistors

L.K. Nanver, P.J. French, E.J.G. Goudena, H.W. van Zeijl

Research output: Contribution to journal › Article › Academic › peer-review

8 Citations (Scopus)

Abstract

Low stress silicon rich nitride SiN_x has been examined as surface isolation in a 15 GHz washed emitter–base (WEB) bipolar process. The resistance of SiN_x to wet etching in HF simplifies the processing and improves the control of device dimensions. The WEB process allows a direct comparison of device characteristics for several SiO₂ and SiN_x passivation layers. Films of SiN_x with strain levels in the range 4×10⁻⁴–3×10⁻³ were developed using a micromachined test structure. Damage of the silicon surface, which induces emitter–collector shorts, is avoided by using very low stress nitride (strain < 1·8×10⁻³). The base leakage currents, which are associated with silicon/insulator interface traps, are not stress dependent but are characteristic of the type of isolation.

Original language	English
Pages (from-to)	36-40
Number of pages	5
Journal	Materials Science and Technology (United Kingdom)
Volume	11
Issue number	1
DOIs	https://doi.org/10.1179/mst.1995.11.1.36
Publication status	Published - 1 Jan 1995
Externally published	Yes

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10.1179/mst.1995.11.1.36

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title = "Low stress nitride as surface isolation in bipolar transistors",

abstract = "Low stress silicon rich nitride SiNx has been examined as surface isolation in a 15 GHz washed emitter–base (WEB) bipolar process. The resistance of SiNx to wet etching in HF simplifies the processing and improves the control of device dimensions. The WEB process allows a direct comparison of device characteristics for several SiO2 and SiNx passivation layers. Films of SiNx with strain levels in the range 4×10−4–3×10−3 were developed using a micromachined test structure. Damage of the silicon surface, which induces emitter–collector shorts, is avoided by using very low stress nitride (strain < 1·8×10−3). The base leakage currents, which are associated with silicon/insulator interface traps, are not stress dependent but are characteristic of the type of isolation.",

author = "L.K. Nanver and P.J. French and E.J.G. Goudena and {van Zeijl}, H.W.",

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AU - Nanver, L.K.

AU - French, P.J.

AU - Goudena, E.J.G.

AU - van Zeijl, H.W.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - Low stress silicon rich nitride SiNx has been examined as surface isolation in a 15 GHz washed emitter–base (WEB) bipolar process. The resistance of SiNx to wet etching in HF simplifies the processing and improves the control of device dimensions. The WEB process allows a direct comparison of device characteristics for several SiO2 and SiNx passivation layers. Films of SiNx with strain levels in the range 4×10−4–3×10−3 were developed using a micromachined test structure. Damage of the silicon surface, which induces emitter–collector shorts, is avoided by using very low stress nitride (strain < 1·8×10−3). The base leakage currents, which are associated with silicon/insulator interface traps, are not stress dependent but are characteristic of the type of isolation.

AB - Low stress silicon rich nitride SiNx has been examined as surface isolation in a 15 GHz washed emitter–base (WEB) bipolar process. The resistance of SiNx to wet etching in HF simplifies the processing and improves the control of device dimensions. The WEB process allows a direct comparison of device characteristics for several SiO2 and SiNx passivation layers. Films of SiNx with strain levels in the range 4×10−4–3×10−3 were developed using a micromachined test structure. Damage of the silicon surface, which induces emitter–collector shorts, is avoided by using very low stress nitride (strain < 1·8×10−3). The base leakage currents, which are associated with silicon/insulator interface traps, are not stress dependent but are characteristic of the type of isolation.

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DO - 10.1179/mst.1995.11.1.36

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SN - 0267-0836

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EP - 40

JO - Materials Science and Technology (United Kingdom)

JF - Materials Science and Technology (United Kingdom)

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Low stress nitride as surface isolation in bipolar transistors

Abstract

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