Abstract
In this work, we present a new platform, Si3N4-on-sapphire, in which 1.35 μm thick Si3N4 layers can be deposited in a single low pressure chemical vapor deposition (LPCVD) step with very low residual tensile stress (
Original language | English |
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Title of host publication | ECIO 2022: 23rd European Conference on Integrated Optics |
Subtitle of host publication | 4th May - 6th May, Milan, Italy |
Place of Publication | Milan |
Publisher | Politecnico di Milano |
Pages | 54-56 |
Publication status | Published - 4 May 2022 |
Event | 23rd European Conference on Integrated Optics, ECIO 2022 - Milan, Italy Duration: 4 May 2022 → 6 May 2022 Conference number: 23 |
Conference
Conference | 23rd European Conference on Integrated Optics, ECIO 2022 |
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Abbreviated title | ECIO |
Country/Territory | Italy |
City | Milan |
Period | 4/05/22 → 6/05/22 |
Keywords
- Thick silicon nitride
- Sapphire
- Stress
- Cracks