Low-stress Si3N4 waveguides on sapphire substrate: (Student paper)

K. Wang; E.J.W. Berenschot; M. Dijkstra; R.M. Tiggelaar; S.M. Martinussen; L. Chang; W.A.P.M. Hendriks; B.T.H. Borgelink; R.N.  Frentrop; S.M.  García Blanco; N.R. Tas; V.V. Tkachuk

Low-stress Si₃N₄ waveguides on sapphire substrate: (Student paper)

K. Wang, E.J.W. Berenschot, M. Dijkstra, R.M. Tiggelaar, S.M. Martinussen, L. Chang, W.A.P.M. Hendriks, B.T.H. Borgelink, R.N. Frentrop, S.M. García Blanco, N.R. Tas, V.V. Tkachuk

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

In this work, we present a new platform, Si3N4-on-sapphire, in which 1.35 μm thick Si3N4 layers can be deposited in a single low pressure chemical vapor deposition (LPCVD) step with very low residual tensile stress (

Original language	English
Title of host publication	ECIO 2022: 23rd European Conference on Integrated Optics
Subtitle of host publication	4th May - 6th May, Milan, Italy
Place of Publication	Milan
Publisher	Politecnico di Milano
Pages	54-56
Publication status	Published - 4 May 2022
Event	23rd European Conference on Integrated Optics, ECIO 2022 - Milan, Italy Duration: 4 May 2022 → 6 May 2022 Conference number: 23

Conference

Conference	23rd European Conference on Integrated Optics, ECIO 2022
Abbreviated title	ECIO
Country/Territory	Italy
City	Milan
Period	4/05/22 → 6/05/22

Keywords

Thick silicon nitride
Sapphire
Stress
Cracks

Cite this

Wang, K., Berenschot, E. J. W., Dijkstra, M., Tiggelaar, R. M., Martinussen, S. M., Chang, L., Hendriks, W. A. P. M., Borgelink, B. T. H., Frentrop, R. N., García Blanco, S. M., Tas, N. R., & Tkachuk, V. V. (2022). Low-stress Si₃N₄ waveguides on sapphire substrate: (Student paper). In ECIO 2022: 23rd European Conference on Integrated Optics: 4th May - 6th May, Milan, Italy (pp. 54-56). Politecnico di Milano.

@inproceedings{c9bb0f1e07484d7785b746234acf591f,

title = "Low-stress Si3N4 waveguides on sapphire substrate: (Student paper)",

abstract = "In this work, we present a new platform, Si3N4-on-sapphire, in which 1.35 μm thick Si3N4 layers can be deposited in a single low pressure chemical vapor deposition (LPCVD) step with very low residual tensile stress (",

keywords = "Thick silicon nitride, Sapphire, Stress, Cracks",

author = "K. Wang and E.J.W. Berenschot and M. Dijkstra and R.M. Tiggelaar and S.M. Martinussen and L. Chang and W.A.P.M. Hendriks and B.T.H. Borgelink and R.N. Frentrop and {Garc{\'i}a Blanco}, S.M. and N.R. Tas and V.V. Tkachuk",

year = "2022",

month = may,

day = "4",

language = "English",

pages = "54--56",

booktitle = "ECIO 2022: 23rd European Conference on Integrated Optics",

publisher = "Politecnico di Milano",

note = "23rd European Conference on Integrated Optics, ECIO 2022, ECIO ; Conference date: 04-05-2022 Through 06-05-2022",

}

Wang, K , Berenschot, EJW , Dijkstra, M , Tiggelaar, RM, Martinussen, SM, Chang, L , Hendriks, WAPM, Borgelink, BTH, Frentrop, RN, García Blanco, SM , Tas, NR & Tkachuk, VV 2022, Low-stress Si₃N₄ waveguides on sapphire substrate: (Student paper). in ECIO 2022: 23rd European Conference on Integrated Optics: 4th May - 6th May, Milan, Italy. Politecnico di Milano, Milan, pp. 54-56, 23rd European Conference on Integrated Optics, ECIO 2022, Milan, Italy, 4/05/22.

Low-stress Si₃N₄ waveguides on sapphire substrate: (Student paper). / Wang, K.; Berenschot, E.J.W.; Dijkstra, M. et al.
ECIO 2022: 23rd European Conference on Integrated Optics: 4th May - 6th May, Milan, Italy. Milan: Politecnico di Milano, 2022. p. 54-56.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Low-stress Si3N4 waveguides on sapphire substrate

T2 - 23rd European Conference on Integrated Optics, ECIO 2022

AU - Wang, K.

AU - Berenschot, E.J.W.

AU - Dijkstra, M.

AU - Tiggelaar, R.M.

AU - Martinussen, S.M.

AU - Chang, L.

AU - Hendriks, W.A.P.M.

AU - Borgelink, B.T.H.

AU - Frentrop, R.N.

AU - García Blanco, S.M.

AU - Tas, N.R.

AU - Tkachuk, V.V.

N1 - Conference code: 23

PY - 2022/5/4

Y1 - 2022/5/4

N2 - In this work, we present a new platform, Si3N4-on-sapphire, in which 1.35 μm thick Si3N4 layers can be deposited in a single low pressure chemical vapor deposition (LPCVD) step with very low residual tensile stress (

AB - In this work, we present a new platform, Si3N4-on-sapphire, in which 1.35 μm thick Si3N4 layers can be deposited in a single low pressure chemical vapor deposition (LPCVD) step with very low residual tensile stress (

KW - Thick silicon nitride

KW - Sapphire

KW - Stress

KW - Cracks

M3 - Conference contribution

SP - 54

EP - 56

BT - ECIO 2022: 23rd European Conference on Integrated Optics

PB - Politecnico di Milano

CY - Milan

Y2 - 4 May 2022 through 6 May 2022