Low-stress Si3N4 waveguides on sapphire substrate: (Student paper)

K. Wang, E.J.W. Berenschot, M. Dijkstra, R.M. Tiggelaar, S.M. Martinussen, L. Chang, W.A.P.M. Hendriks, B.T.H. Borgelink, R.N. Frentrop, S.M. García Blanco, N.R. Tas, V.V. Tkachuk

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review


In this work, we present a new platform, Si3N4-on-sapphire, in which 1.35 μm thick Si3N4 layers can be deposited in a single low pressure chemical vapor deposition (LPCVD) step with very low residual tensile stress (
Original languageEnglish
Title of host publicationECIO 2022: 23rd European Conference on Integrated Optics
Subtitle of host publication4th May - 6th May, Milan, Italy
Place of PublicationMilan
PublisherPolitecnico di Milano
Publication statusPublished - 4 May 2022
Event23rd European Conference on Integrated Optics, ECIO 2022 - Milan, Italy
Duration: 4 May 20226 May 2022
Conference number: 23


Conference23rd European Conference on Integrated Optics, ECIO 2022
Abbreviated titleECIO


  • Thick silicon nitride
  • Sapphire
  • Stress
  • Cracks

Cite this