Low-temperature deposition of high-quality siliconoxynitride films for CMOS-integrated optics

B. Rangarajan, Alexeij Y. Kovalgin, Kerstin Worhoff, Jurriaan Schmitz

    Research output: Contribution to journalArticleAcademicpeer-review

    12 Citations (Scopus)

    Abstract

    The growth of silicon oxynitride thin films applying remote inductively coupled, plasma-enhanced chemical vapor deposition is optimized toward high optical quality at a deposition temperature as low as 150°C. Propagation losses of 0.5±0.05  dB/cm, 1.6±0.2  dB/cm and 0.6±0.06  dB/cm are measured on as-deposited waveguides for wavelengths of 1300, 1550, and 1600 nm, respectively. Films were deposited onto a 0.25 μm technology mixed-signal CMOS chip to show the application perspective for three-dimensional integrated optoelectronic chips.
    Original languageUndefined
    Pages (from-to)941-943
    Number of pages3
    JournalOptics letters
    Volume38
    Issue number6
    DOIs
    Publication statusPublished - 13 Mar 2013

    Keywords

    • EWI-23195
    • IR-85177
    • METIS-296368

    Cite this

    @article{04ebf392326b43549003747a7c124a17,
    title = "Low-temperature deposition of high-quality siliconoxynitride films for CMOS-integrated optics",
    abstract = "The growth of silicon oxynitride thin films applying remote inductively coupled, plasma-enhanced chemical vapor deposition is optimized toward high optical quality at a deposition temperature as low as 150°C. Propagation losses of 0.5±0.05  dB/cm, 1.6±0.2  dB/cm and 0.6±0.06  dB/cm are measured on as-deposited waveguides for wavelengths of 1300, 1550, and 1600 nm, respectively. Films were deposited onto a 0.25 μm technology mixed-signal CMOS chip to show the application perspective for three-dimensional integrated optoelectronic chips.",
    keywords = "EWI-23195, IR-85177, METIS-296368",
    author = "B. Rangarajan and Kovalgin, {Alexeij Y.} and Kerstin Worhoff and Jurriaan Schmitz",
    note = "eemcs-eprint-23195",
    year = "2013",
    month = "3",
    day = "13",
    doi = "10.1364/OL.38.000941",
    language = "Undefined",
    volume = "38",
    pages = "941--943",
    journal = "Optics letters",
    issn = "0146-9592",
    publisher = "The Optical Society",
    number = "6",

    }

    Low-temperature deposition of high-quality siliconoxynitride films for CMOS-integrated optics. / Rangarajan, B.; Kovalgin, Alexeij Y.; Worhoff, Kerstin; Schmitz, Jurriaan.

    In: Optics letters, Vol. 38, No. 6, 13.03.2013, p. 941-943.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Low-temperature deposition of high-quality siliconoxynitride films for CMOS-integrated optics

    AU - Rangarajan, B.

    AU - Kovalgin, Alexeij Y.

    AU - Worhoff, Kerstin

    AU - Schmitz, Jurriaan

    N1 - eemcs-eprint-23195

    PY - 2013/3/13

    Y1 - 2013/3/13

    N2 - The growth of silicon oxynitride thin films applying remote inductively coupled, plasma-enhanced chemical vapor deposition is optimized toward high optical quality at a deposition temperature as low as 150°C. Propagation losses of 0.5±0.05  dB/cm, 1.6±0.2  dB/cm and 0.6±0.06  dB/cm are measured on as-deposited waveguides for wavelengths of 1300, 1550, and 1600 nm, respectively. Films were deposited onto a 0.25 μm technology mixed-signal CMOS chip to show the application perspective for three-dimensional integrated optoelectronic chips.

    AB - The growth of silicon oxynitride thin films applying remote inductively coupled, plasma-enhanced chemical vapor deposition is optimized toward high optical quality at a deposition temperature as low as 150°C. Propagation losses of 0.5±0.05  dB/cm, 1.6±0.2  dB/cm and 0.6±0.06  dB/cm are measured on as-deposited waveguides for wavelengths of 1300, 1550, and 1600 nm, respectively. Films were deposited onto a 0.25 μm technology mixed-signal CMOS chip to show the application perspective for three-dimensional integrated optoelectronic chips.

    KW - EWI-23195

    KW - IR-85177

    KW - METIS-296368

    U2 - 10.1364/OL.38.000941

    DO - 10.1364/OL.38.000941

    M3 - Article

    VL - 38

    SP - 941

    EP - 943

    JO - Optics letters

    JF - Optics letters

    SN - 0146-9592

    IS - 6

    ER -