Low-temperature deposition of high-quality siliconoxynitride films for CMOS-integrated optics

B. Rangarajan, Alexeij Y. Kovalgin, Kerstin Worhoff, Jurriaan Schmitz

    Research output: Contribution to journalArticleAcademicpeer-review

    16 Citations (Scopus)


    The growth of silicon oxynitride thin films applying remote inductively coupled, plasma-enhanced chemical vapor deposition is optimized toward high optical quality at a deposition temperature as low as 150°C. Propagation losses of 0.5±0.05  dB/cm, 1.6±0.2  dB/cm and 0.6±0.06  dB/cm are measured on as-deposited waveguides for wavelengths of 1300, 1550, and 1600 nm, respectively. Films were deposited onto a 0.25 μm technology mixed-signal CMOS chip to show the application perspective for three-dimensional integrated optoelectronic chips.
    Original languageUndefined
    Pages (from-to)941-943
    Number of pages3
    JournalOptics letters
    Issue number6
    Publication statusPublished - 13 Mar 2013


    • EWI-23195
    • IR-85177
    • METIS-296368

    Cite this