The growth of silicon oxynitride thin films applying remote inductively coupled, plasma-enhanced chemical vapor deposition is optimized toward high optical quality at a deposition temperature as low as 150°C. Propagation losses of 0.5±0.05 dB/cm, 1.6±0.2 dB/cm and 0.6±0.06 dB/cm are measured on as-deposited waveguides for wavelengths of 1300, 1550, and 1600 nm, respectively. Films were deposited onto a 0.25 μm technology mixed-signal CMOS chip to show the application perspective for three-dimensional integrated optoelectronic chips.
Rangarajan, B., Kovalgin, A. Y., Worhoff, K., & Schmitz, J. (2013). Low-temperature deposition of high-quality siliconoxynitride films for CMOS-integrated optics. Optics letters, 38(6), 941-943. https://doi.org/10.1364/OL.38.000941