Abstract
The growth of silicon oxynitride thin films applying remote inductively coupled, plasma-enhanced chemical vapor deposition is optimized toward high optical quality at a deposition temperature as low as 150°C. Propagation losses of 0.5±0.05 dB/cm, 1.6±0.2 dB/cm and 0.6±0.06 dB/cm are measured on as-deposited waveguides for wavelengths of 1300, 1550, and 1600 nm, respectively. Films were deposited onto a 0.25 μm technology mixed-signal CMOS chip to show the application perspective for three-dimensional integrated optoelectronic chips.
Original language | Undefined |
---|---|
Pages (from-to) | 941-943 |
Number of pages | 3 |
Journal | Optics letters |
Volume | 38 |
Issue number | 6 |
DOIs | |
Publication status | Published - 13 Mar 2013 |
Keywords
- EWI-23195
- IR-85177
- METIS-296368