Low temperature sacrificial wafer bonding for planarization after very deep etching

V.L. Spiering; J.W. Berenschot; M.C. Elwenspoek; J.H.J. Fluitman

doi:10.1109/MEMSYS.1994.555600

Low temperature sacrificial wafer bonding for planarization after very deep etching

V.L. Spiering, J.W. Berenschot, M.C. Elwenspoek, J.H.J. Fluitman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

83 Downloads (Pure)

Abstract

A new technique, at temperatures of 150°C or 450°C, that provides planarization after a very deep etching step in silicon is presented. Resist spinning and layer patterning as well as realization of bridges or cantilevers across deep holes becomes possible. The sacrificial wafer bonding technique contains a wafer bond step followed by an etch back. Results of (1) polymer bonding followed by dry etching and (2) anodic bonding combined with KOH etching are discussed. The polymer bond method was applied in a strain based membrane pressure sensor to pattern the strain gauges and to provide electrical connections across a deep corrugation in a thin silicon nitride membrane by metal bridges.

Original language	English
Title of host publication	Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS)
Subtitle of host publication	An Investigation of Micro Structures, Sensors, Actuators, Machines and Robotic Systems
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	69-74
Number of pages	6
ISBN (Print)	0-7803-1833-1
DOIs	https://doi.org/10.1109/MEMSYS.1994.555600
Publication status	Published - 25 Jan 1994
Event	IEEE Workshop on Micro Electro Mechanical Systems, MEMS 1994 - Oiso, Japan Duration: 25 Jan 1994 → 28 Jan 1994 Conference number: 1994

Workshop

Workshop	IEEE Workshop on Micro Electro Mechanical Systems, MEMS 1994
Abbreviated title	MEMS
Country/Territory	Japan
City	Oiso
Period	25/01/94 → 28/01/94

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10.1109/MEMSYS.1994.555600

Spiering1994lowFinal published version, 1.08 MB

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Spiering, V. L., Berenschot, J. W., Elwenspoek, M. C., & Fluitman, J. H. J. (1994). Low temperature sacrificial wafer bonding for planarization after very deep etching. In Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS): An Investigation of Micro Structures, Sensors, Actuators, Machines and Robotic Systems (pp. 69-74). IEEE. https://doi.org/10.1109/MEMSYS.1994.555600

@inproceedings{fae5357153df4c9f95e9da688bc59a9a,

title = "Low temperature sacrificial wafer bonding for planarization after very deep etching",

abstract = "A new technique, at temperatures of 150°C or 450°C, that provides planarization after a very deep etching step in silicon is presented. Resist spinning and layer patterning as well as realization of bridges or cantilevers across deep holes becomes possible. The sacrificial wafer bonding technique contains a wafer bond step followed by an etch back. Results of (1) polymer bonding followed by dry etching and (2) anodic bonding combined with KOH etching are discussed. The polymer bond method was applied in a strain based membrane pressure sensor to pattern the strain gauges and to provide electrical connections across a deep corrugation in a thin silicon nitride membrane by metal bridges.",

author = "V.L. Spiering and J.W. Berenschot and M.C. Elwenspoek and J.H.J. Fluitman",

year = "1994",

month = jan,

day = "25",

doi = "10.1109/MEMSYS.1994.555600",

language = "English",

isbn = "0-7803-1833-1",

pages = "69--74",

booktitle = "Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS)",

publisher = "IEEE",

address = "United States",

note = "IEEE Workshop on Micro Electro Mechanical Systems, MEMS 1994, MEMS ; Conference date: 25-01-1994 Through 28-01-1994",

}

Spiering, VL, Berenschot, JW, Elwenspoek, MC & Fluitman, JHJ 1994, Low temperature sacrificial wafer bonding for planarization after very deep etching. in Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS): An Investigation of Micro Structures, Sensors, Actuators, Machines and Robotic Systems. IEEE, Piscataway, NJ, pp. 69-74, IEEE Workshop on Micro Electro Mechanical Systems, MEMS 1994, Oiso, Japan, 25/01/94. https://doi.org/10.1109/MEMSYS.1994.555600

Low temperature sacrificial wafer bonding for planarization after very deep etching. / Spiering, V.L.; Berenschot, J.W.; Elwenspoek, M.C. et al.
Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS): An Investigation of Micro Structures, Sensors, Actuators, Machines and Robotic Systems. Piscataway, NJ: IEEE, 1994. p. 69-74.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Low temperature sacrificial wafer bonding for planarization after very deep etching

AU - Spiering, V.L.

AU - Berenschot, J.W.

AU - Elwenspoek, M.C.

AU - Fluitman, J.H.J.

N1 - Conference code: 1994

PY - 1994/1/25

Y1 - 1994/1/25

N2 - A new technique, at temperatures of 150°C or 450°C, that provides planarization after a very deep etching step in silicon is presented. Resist spinning and layer patterning as well as realization of bridges or cantilevers across deep holes becomes possible. The sacrificial wafer bonding technique contains a wafer bond step followed by an etch back. Results of (1) polymer bonding followed by dry etching and (2) anodic bonding combined with KOH etching are discussed. The polymer bond method was applied in a strain based membrane pressure sensor to pattern the strain gauges and to provide electrical connections across a deep corrugation in a thin silicon nitride membrane by metal bridges.

AB - A new technique, at temperatures of 150°C or 450°C, that provides planarization after a very deep etching step in silicon is presented. Resist spinning and layer patterning as well as realization of bridges or cantilevers across deep holes becomes possible. The sacrificial wafer bonding technique contains a wafer bond step followed by an etch back. Results of (1) polymer bonding followed by dry etching and (2) anodic bonding combined with KOH etching are discussed. The polymer bond method was applied in a strain based membrane pressure sensor to pattern the strain gauges and to provide electrical connections across a deep corrugation in a thin silicon nitride membrane by metal bridges.

U2 - 10.1109/MEMSYS.1994.555600

DO - 10.1109/MEMSYS.1994.555600

M3 - Conference contribution

SN - 0-7803-1833-1

SP - 69

EP - 74

BT - Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS)

PB - IEEE

CY - Piscataway, NJ

T2 - IEEE Workshop on Micro Electro Mechanical Systems, MEMS 1994

Y2 - 25 January 1994 through 28 January 1994

ER -

Low temperature sacrificial wafer bonding for planarization after very deep etching

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