Low temperature sacrificial wafer bonding for planarization after very deep etching

V.L. Spiering, J.W. Berenschot, M.C. Elwenspoek, J.H.J. Fluitman

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    3 Citations (Scopus)
    43 Downloads (Pure)

    Abstract

    A new technique, at temperatures of 150°C or 450°C, that provides planarization after a very deep etching step in silicon is presented. Resist spinning and layer patterning as well as realization of bridges or cantilevers across deep holes becomes possible. The sacrificial wafer bonding technique contains a wafer bond step followed by an etch back. Results of (1) polymer bonding followed by dry etching and (2) anodic bonding combined with KOH etching are discussed. The polymer bond method was applied in a strain based membrane pressure sensor to pattern the strain gauges and to provide electrical connections across a deep corrugation in a thin silicon nitride membrane by metal bridges.
    Original languageEnglish
    Title of host publicationProceedings of the IEEE Micro Electro Mechanical Systems (MEMS)
    Subtitle of host publicationAn Investigation of Micro Structures, Sensors, Actuators, Machines and Robotic Systems
    Place of PublicationPiscataway, NJ
    PublisherIEEE Computer Society
    Pages69-74
    Number of pages6
    ISBN (Print)0-7803-1833-1
    DOIs
    Publication statusPublished - 25 Jan 1994
    EventIEEE Workshop on Micro Electro Mechanical Systems, MEMS 1994 - Oiso, Japan
    Duration: 25 Jan 199428 Jan 1994
    Conference number: 1994

    Workshop

    WorkshopIEEE Workshop on Micro Electro Mechanical Systems, MEMS 1994
    Abbreviated titleMEMS
    CountryJapan
    CityOiso
    Period25/01/9428/01/94

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