Low temperature silicidation of Pd layers on crystalline silicon monitored via in situ resistance measurements

Erik J. Faber, Rob A.M. Wolters, Bijoy Rajasekharan, Cora Salm, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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    Abstract

    Metal-silicon contacts may degrade during (SOI) wafer processing at unknown, high temperature conditions such as caused by sputtering or etching. We observed this phenomenon for Pd contacts on SOI wafers. Suicide formation of Pd contacts on crystalline silicon has therefore been investigated for low temperatures (57 - 135°C). We present an elegant measurement technique for monitoring the suicide formation process using in situ four point resistance measurements. From this the Pd2Si thickness was determined via a resistance model. The results obtained via this simple measurement technique showed that suicide formation of Pd contacts on Si occurs already at 57°C, which is a temperature easily reached during metal sputtering onto thin SOI wafers. Furthermore, below approximately 100°C our results indicated that apart from Pd2Si formation also mixed layers of Pd in Si and vice versa exist whereas at higher temperatures these mixed layers are absent or not significantly present. In addition, we consider this measurement technique as an elegant, universally applicable method for monitoring suicide formation of metal-silicon contacts.

    Original languageEnglish
    Title of host publicationAdvanced Metallization Conference 2009
    Subtitle of host publicationproceedings of the conference held September 13-15, 2009, Baltimore, Maryland, U.S.A
    EditorsDaniel C. Edelstein, Stefan E. Schulz
    PublisherMaterials Research Society
    Pages133-140
    Number of pages8
    ISBN (Print)9781605112183
    Publication statusPublished - 29 Nov 2010
    Event26th Advanced Metallization Conference, AMC 2009 - Baltimore, United States
    Duration: 13 Oct 200915 Oct 2009
    Conference number: 26
    http://www.advancedmetallizationconference.com/

    Publication series

    NameMaterials Research Society conference proceedings
    PublisherMaterials Research Society
    Volume25
    ISSN (Print)1540-1766

    Conference

    Conference26th Advanced Metallization Conference, AMC 2009
    Abbreviated titleAMC 2009
    CountryUnited States
    CityBaltimore
    Period13/10/0915/10/09
    Internet address

    Fingerprint

    Silicon
    Crystalline materials
    Metals
    Sputtering
    Temperature
    Monitoring
    Etching
    Processing

    Cite this

    Faber, E. J., Wolters, R. A. M., Rajasekharan, B., Salm, C., & Schmitz, J. (2010). Low temperature silicidation of Pd layers on crystalline silicon monitored via in situ resistance measurements. In D. C. Edelstein, & S. E. Schulz (Eds.), Advanced Metallization Conference 2009: proceedings of the conference held September 13-15, 2009, Baltimore, Maryland, U.S.A (pp. 133-140). (Materials Research Society conference proceedings; Vol. 25). Materials Research Society.
    Faber, Erik J. ; Wolters, Rob A.M. ; Rajasekharan, Bijoy ; Salm, Cora ; Schmitz, Jurriaan. / Low temperature silicidation of Pd layers on crystalline silicon monitored via in situ resistance measurements. Advanced Metallization Conference 2009: proceedings of the conference held September 13-15, 2009, Baltimore, Maryland, U.S.A. editor / Daniel C. Edelstein ; Stefan E. Schulz. Materials Research Society, 2010. pp. 133-140 (Materials Research Society conference proceedings).
    @inproceedings{221949dc9f3946a382d03b352fc68541,
    title = "Low temperature silicidation of Pd layers on crystalline silicon monitored via in situ resistance measurements",
    abstract = "Metal-silicon contacts may degrade during (SOI) wafer processing at unknown, high temperature conditions such as caused by sputtering or etching. We observed this phenomenon for Pd contacts on SOI wafers. Suicide formation of Pd contacts on crystalline silicon has therefore been investigated for low temperatures (57 - 135°C). We present an elegant measurement technique for monitoring the suicide formation process using in situ four point resistance measurements. From this the Pd2Si thickness was determined via a resistance model. The results obtained via this simple measurement technique showed that suicide formation of Pd contacts on Si occurs already at 57°C, which is a temperature easily reached during metal sputtering onto thin SOI wafers. Furthermore, below approximately 100°C our results indicated that apart from Pd2Si formation also mixed layers of Pd in Si and vice versa exist whereas at higher temperatures these mixed layers are absent or not significantly present. In addition, we consider this measurement technique as an elegant, universally applicable method for monitoring suicide formation of metal-silicon contacts.",
    author = "Faber, {Erik J.} and Wolters, {Rob A.M.} and Bijoy Rajasekharan and Cora Salm and Jurriaan Schmitz",
    year = "2010",
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    series = "Materials Research Society conference proceedings",
    publisher = "Materials Research Society",
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    Faber, EJ, Wolters, RAM, Rajasekharan, B, Salm, C & Schmitz, J 2010, Low temperature silicidation of Pd layers on crystalline silicon monitored via in situ resistance measurements. in DC Edelstein & SE Schulz (eds), Advanced Metallization Conference 2009: proceedings of the conference held September 13-15, 2009, Baltimore, Maryland, U.S.A. Materials Research Society conference proceedings, vol. 25, Materials Research Society, pp. 133-140, 26th Advanced Metallization Conference, AMC 2009, Baltimore, United States, 13/10/09.

    Low temperature silicidation of Pd layers on crystalline silicon monitored via in situ resistance measurements. / Faber, Erik J.; Wolters, Rob A.M.; Rajasekharan, Bijoy; Salm, Cora; Schmitz, Jurriaan.

    Advanced Metallization Conference 2009: proceedings of the conference held September 13-15, 2009, Baltimore, Maryland, U.S.A. ed. / Daniel C. Edelstein; Stefan E. Schulz. Materials Research Society, 2010. p. 133-140 (Materials Research Society conference proceedings; Vol. 25).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    TY - GEN

    T1 - Low temperature silicidation of Pd layers on crystalline silicon monitored via in situ resistance measurements

    AU - Faber, Erik J.

    AU - Wolters, Rob A.M.

    AU - Rajasekharan, Bijoy

    AU - Salm, Cora

    AU - Schmitz, Jurriaan

    PY - 2010/11/29

    Y1 - 2010/11/29

    N2 - Metal-silicon contacts may degrade during (SOI) wafer processing at unknown, high temperature conditions such as caused by sputtering or etching. We observed this phenomenon for Pd contacts on SOI wafers. Suicide formation of Pd contacts on crystalline silicon has therefore been investigated for low temperatures (57 - 135°C). We present an elegant measurement technique for monitoring the suicide formation process using in situ four point resistance measurements. From this the Pd2Si thickness was determined via a resistance model. The results obtained via this simple measurement technique showed that suicide formation of Pd contacts on Si occurs already at 57°C, which is a temperature easily reached during metal sputtering onto thin SOI wafers. Furthermore, below approximately 100°C our results indicated that apart from Pd2Si formation also mixed layers of Pd in Si and vice versa exist whereas at higher temperatures these mixed layers are absent or not significantly present. In addition, we consider this measurement technique as an elegant, universally applicable method for monitoring suicide formation of metal-silicon contacts.

    AB - Metal-silicon contacts may degrade during (SOI) wafer processing at unknown, high temperature conditions such as caused by sputtering or etching. We observed this phenomenon for Pd contacts on SOI wafers. Suicide formation of Pd contacts on crystalline silicon has therefore been investigated for low temperatures (57 - 135°C). We present an elegant measurement technique for monitoring the suicide formation process using in situ four point resistance measurements. From this the Pd2Si thickness was determined via a resistance model. The results obtained via this simple measurement technique showed that suicide formation of Pd contacts on Si occurs already at 57°C, which is a temperature easily reached during metal sputtering onto thin SOI wafers. Furthermore, below approximately 100°C our results indicated that apart from Pd2Si formation also mixed layers of Pd in Si and vice versa exist whereas at higher temperatures these mixed layers are absent or not significantly present. In addition, we consider this measurement technique as an elegant, universally applicable method for monitoring suicide formation of metal-silicon contacts.

    UR - http://www.scopus.com/inward/record.url?scp=78649304171&partnerID=8YFLogxK

    M3 - Conference contribution

    SN - 9781605112183

    T3 - Materials Research Society conference proceedings

    SP - 133

    EP - 140

    BT - Advanced Metallization Conference 2009

    A2 - Edelstein, Daniel C.

    A2 - Schulz, Stefan E.

    PB - Materials Research Society

    ER -

    Faber EJ, Wolters RAM, Rajasekharan B, Salm C, Schmitz J. Low temperature silicidation of Pd layers on crystalline silicon monitored via in situ resistance measurements. In Edelstein DC, Schulz SE, editors, Advanced Metallization Conference 2009: proceedings of the conference held September 13-15, 2009, Baltimore, Maryland, U.S.A. Materials Research Society. 2010. p. 133-140. (Materials Research Society conference proceedings).