Abstract
Metal-silicon contacts may degrade during (SOI) wafer processing at unknown, high temperature conditions such as caused by sputtering or etching. We observed this phenomenon for Pd contacts on SOI wafers. Suicide formation of Pd contacts on crystalline silicon has therefore been investigated for low temperatures (57 - 135°C). We present an elegant measurement technique for monitoring the suicide formation process using in situ four point resistance measurements. From this the Pd2Si thickness was determined via a resistance model. The results obtained via this simple measurement technique showed that suicide formation of Pd contacts on Si occurs already at 57°C, which is a temperature easily reached during metal sputtering onto thin SOI wafers. Furthermore, below approximately 100°C our results indicated that apart from Pd2Si formation also mixed layers of Pd in Si and vice versa exist whereas at higher temperatures these mixed layers are absent or not significantly present. In addition, we consider this measurement technique as an elegant, universally applicable method for monitoring suicide formation of metal-silicon contacts.
| Original language | English |
|---|---|
| Title of host publication | Advanced Metallization Conference 2009 |
| Subtitle of host publication | proceedings of the conference held September 13-15, 2009, Baltimore, Maryland, U.S.A |
| Editors | Daniel C. Edelstein, Stefan E. Schulz |
| Publisher | Materials Research Society |
| Pages | 133-140 |
| Number of pages | 8 |
| ISBN (Print) | 9781605112183 |
| Publication status | Published - 29 Nov 2010 |
| Event | 26th Advanced Metallization Conference, AMC 2009 - Baltimore, United States Duration: 13 Oct 2009 → 15 Oct 2009 Conference number: 26 http://www.advancedmetallizationconference.com/ |
Publication series
| Name | Materials Research Society conference proceedings |
|---|---|
| Publisher | Materials Research Society |
| Volume | 25 |
| ISSN (Print) | 1540-1766 |
Conference
| Conference | 26th Advanced Metallization Conference, AMC 2009 |
|---|---|
| Abbreviated title | AMC 2009 |
| Country | United States |
| City | Baltimore |
| Period | 13/10/09 → 15/10/09 |
| Internet address |
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Low temperature silicidation of Pd layers on crystalline silicon monitored via in situ resistance measurements. / Faber, Erik J.; Wolters, Rob A.M.; Rajasekharan, Bijoy; Salm, Cora; Schmitz, Jurriaan.
Advanced Metallization Conference 2009: proceedings of the conference held September 13-15, 2009, Baltimore, Maryland, U.S.A. ed. / Daniel C. Edelstein; Stefan E. Schulz. Materials Research Society, 2010. p. 133-140 (Materials Research Society conference proceedings; Vol. 25).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
TY - GEN
T1 - Low temperature silicidation of Pd layers on crystalline silicon monitored via in situ resistance measurements
AU - Faber, Erik J.
AU - Wolters, Rob A.M.
AU - Rajasekharan, Bijoy
AU - Salm, Cora
AU - Schmitz, Jurriaan
PY - 2010/11/29
Y1 - 2010/11/29
N2 - Metal-silicon contacts may degrade during (SOI) wafer processing at unknown, high temperature conditions such as caused by sputtering or etching. We observed this phenomenon for Pd contacts on SOI wafers. Suicide formation of Pd contacts on crystalline silicon has therefore been investigated for low temperatures (57 - 135°C). We present an elegant measurement technique for monitoring the suicide formation process using in situ four point resistance measurements. From this the Pd2Si thickness was determined via a resistance model. The results obtained via this simple measurement technique showed that suicide formation of Pd contacts on Si occurs already at 57°C, which is a temperature easily reached during metal sputtering onto thin SOI wafers. Furthermore, below approximately 100°C our results indicated that apart from Pd2Si formation also mixed layers of Pd in Si and vice versa exist whereas at higher temperatures these mixed layers are absent or not significantly present. In addition, we consider this measurement technique as an elegant, universally applicable method for monitoring suicide formation of metal-silicon contacts.
AB - Metal-silicon contacts may degrade during (SOI) wafer processing at unknown, high temperature conditions such as caused by sputtering or etching. We observed this phenomenon for Pd contacts on SOI wafers. Suicide formation of Pd contacts on crystalline silicon has therefore been investigated for low temperatures (57 - 135°C). We present an elegant measurement technique for monitoring the suicide formation process using in situ four point resistance measurements. From this the Pd2Si thickness was determined via a resistance model. The results obtained via this simple measurement technique showed that suicide formation of Pd contacts on Si occurs already at 57°C, which is a temperature easily reached during metal sputtering onto thin SOI wafers. Furthermore, below approximately 100°C our results indicated that apart from Pd2Si formation also mixed layers of Pd in Si and vice versa exist whereas at higher temperatures these mixed layers are absent or not significantly present. In addition, we consider this measurement technique as an elegant, universally applicable method for monitoring suicide formation of metal-silicon contacts.
UR - http://www.scopus.com/inward/record.url?scp=78649304171&partnerID=8YFLogxK
M3 - Conference contribution
SN - 9781605112183
T3 - Materials Research Society conference proceedings
SP - 133
EP - 140
BT - Advanced Metallization Conference 2009
A2 - Edelstein, Daniel C.
A2 - Schulz, Stefan E.
PB - Materials Research Society
ER -