Low-temperature SiO2 layers deposited by combination of ECR plasma and supersonic silane/helium jet

Alexeij Y. Kovalgin, I.G. Isai, J. Holleman, Jurriaan Schmitz

    Research output: Contribution to journal › Article › Academic › peer-review

    7 Citations (Scopus)
    1 Downloads (Pure)

    Abstract

    As the semiconductor industry strives toward wafer postprocessing and three-dimensional integration, a demand has arisen for high-quality thin films deposited at temperatures below 400°C. In this work, we present SiO2 films deposited at near room temperature, using a multipolar electron cyclotron resonance _ECR_ plasma source, introducing the SiH4 gas by using a highvelocity jet of silane diluted in helium. The electrical properties were studied under varying deposition parameters, such as gas flow rate, deposition pressure, and postdeposition and postmetallization annealing processes. At a low pressure, low SiH4 flow and high helium flow, device-quality SiO2 layers were obtained after a deposition combined with a 5 min postmetallization annealing at 400°C. These layers exhibited a refractive index of 1.46, an OSi ratio of 2, an interface trap density in the order of 1011 cm−2 eV−1, an oxide charge density down to 1010 cm−2, and a breakdown field up to 11 MVcm. They are thus suitable as a gate dielectric in a thin-film transistor.
    Original languageUndefined
    Pages (from-to)G21-G28
    Number of pages8
    JournalJournal of the Electrochemical Society
    Volume155
    Issue number2
    DOIs
    Publication statusPublished - 1 Jan 2008

    Keywords

    • SC-ICF: Integrated Circuit Fabrication
    • IR-61694
    • METIS-250859
    • EWI-11676

    Cite this

    Kovalgin, Alexeij Y. ; Isai, I.G. ; Holleman, J. ; Schmitz, Jurriaan. / Low-temperature SiO2 layers deposited by combination of ECR plasma and supersonic silane/helium jet. In: Journal of the Electrochemical Society. 2008 ; Vol. 155, No. 2. pp. G21-G28.
    @article{8918802577db4fc4a25662bd6269ccef,
    title = "Low-temperature SiO2 layers deposited by combination of ECR plasma and supersonic silane/helium jet",
    abstract = "As the semiconductor industry strives toward wafer postprocessing and three-dimensional integration, a demand has arisen for high-quality thin films deposited at temperatures below 400°C. In this work, we present SiO2 films deposited at near room temperature, using a multipolar electron cyclotron resonance _ECR_ plasma source, introducing the SiH4 gas by using a highvelocity jet of silane diluted in helium. The electrical properties were studied under varying deposition parameters, such as gas flow rate, deposition pressure, and postdeposition and postmetallization annealing processes. At a low pressure, low SiH4 flow and high helium flow, device-quality SiO2 layers were obtained after a deposition combined with a 5 min postmetallization annealing at 400°C. These layers exhibited a refractive index of 1.46, an OSi ratio of 2, an interface trap density in the order of 1011 cm−2 eV−1, an oxide charge density down to 1010 cm−2, and a breakdown field up to 11 MVcm. They are thus suitable as a gate dielectric in a thin-film transistor.",
    keywords = "SC-ICF: Integrated Circuit Fabrication, IR-61694, METIS-250859, EWI-11676",
    author = "Kovalgin, {Alexeij Y.} and I.G. Isai and J. Holleman and Jurriaan Schmitz",
    note = "10.1149/1.2815627",
    year = "2008",
    month = "1",
    day = "1",
    doi = "10.1149/1.2815627",
    language = "Undefined",
    volume = "155",
    pages = "G21--G28",
    journal = "Journal of the Electrochemical Society",
    issn = "0013-4651",
    publisher = "The Electrochemical Society Inc.",
    number = "2",

    }

    Kovalgin, AY, Isai, IG, Holleman, J & Schmitz, J 2008, 'Low-temperature SiO2 layers deposited by combination of ECR plasma and supersonic silane/helium jet', Journal of the Electrochemical Society, vol. 155, no. 2, pp. G21-G28. https://doi.org/10.1149/1.2815627

    Low-temperature SiO2 layers deposited by combination of ECR plasma and supersonic silane/helium jet. / Kovalgin, Alexeij Y.; Isai, I.G.; Holleman, J.; Schmitz, Jurriaan.

    In: Journal of the Electrochemical Society, Vol. 155, No. 2, 01.01.2008, p. G21-G28.

    Research output: Contribution to journal › Article › Academic › peer-review

    TY - JOUR

    T1 - Low-temperature SiO2 layers deposited by combination of ECR plasma and supersonic silane/helium jet

    AU - Kovalgin, Alexeij Y.

    AU - Isai, I.G.

    AU - Holleman, J.

    AU - Schmitz, Jurriaan

    N1 - 10.1149/1.2815627

    PY - 2008/1/1

    Y1 - 2008/1/1

    N2 - As the semiconductor industry strives toward wafer postprocessing and three-dimensional integration, a demand has arisen for high-quality thin films deposited at temperatures below 400°C. In this work, we present SiO2 films deposited at near room temperature, using a multipolar electron cyclotron resonance _ECR_ plasma source, introducing the SiH4 gas by using a highvelocity jet of silane diluted in helium. The electrical properties were studied under varying deposition parameters, such as gas flow rate, deposition pressure, and postdeposition and postmetallization annealing processes. At a low pressure, low SiH4 flow and high helium flow, device-quality SiO2 layers were obtained after a deposition combined with a 5 min postmetallization annealing at 400°C. These layers exhibited a refractive index of 1.46, an OSi ratio of 2, an interface trap density in the order of 1011 cm−2 eV−1, an oxide charge density down to 1010 cm−2, and a breakdown field up to 11 MVcm. They are thus suitable as a gate dielectric in a thin-film transistor.

    AB - As the semiconductor industry strives toward wafer postprocessing and three-dimensional integration, a demand has arisen for high-quality thin films deposited at temperatures below 400°C. In this work, we present SiO2 films deposited at near room temperature, using a multipolar electron cyclotron resonance _ECR_ plasma source, introducing the SiH4 gas by using a highvelocity jet of silane diluted in helium. The electrical properties were studied under varying deposition parameters, such as gas flow rate, deposition pressure, and postdeposition and postmetallization annealing processes. At a low pressure, low SiH4 flow and high helium flow, device-quality SiO2 layers were obtained after a deposition combined with a 5 min postmetallization annealing at 400°C. These layers exhibited a refractive index of 1.46, an OSi ratio of 2, an interface trap density in the order of 1011 cm−2 eV−1, an oxide charge density down to 1010 cm−2, and a breakdown field up to 11 MVcm. They are thus suitable as a gate dielectric in a thin-film transistor.

    KW - SC-ICF: Integrated Circuit Fabrication

    KW - IR-61694

    KW - METIS-250859

    KW - EWI-11676

    U2 - 10.1149/1.2815627

    DO - 10.1149/1.2815627

    M3 - Article

    VL - 155

    SP - G21-G28

    JO - Journal of the Electrochemical Society

    JF - Journal of the Electrochemical Society

    SN - 0013-4651

    IS - 2

    ER -

    Kovalgin AY, Isai IG, Holleman J, Schmitz J. Low-temperature SiO2 layers deposited by combination of ECR plasma and supersonic silane/helium jet. Journal of the Electrochemical Society. 2008 Jan 1;155(2):G21-G28. https://doi.org/10.1149/1.2815627

    Access to Document