Low-temperature SiO2 layers deposited by combination of ECR plasma and supersonic silane/helium jet

Alexeij Y. Kovalgin, I.G. Isai, J. Holleman, Jurriaan Schmitz

    Research output: Contribution to journalArticleAcademicpeer-review

    7 Citations (Scopus)
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    Abstract

    As the semiconductor industry strives toward wafer postprocessing and three-dimensional integration, a demand has arisen for high-quality thin films deposited at temperatures below 400°C. In this work, we present SiO2 films deposited at near room temperature, using a multipolar electron cyclotron resonance _ECR_ plasma source, introducing the SiH4 gas by using a highvelocity jet of silane diluted in helium. The electrical properties were studied under varying deposition parameters, such as gas flow rate, deposition pressure, and postdeposition and postmetallization annealing processes. At a low pressure, low SiH4 flow and high helium flow, device-quality SiO2 layers were obtained after a deposition combined with a 5 min postmetallization annealing at 400°C. These layers exhibited a refractive index of 1.46, an OSi ratio of 2, an interface trap density in the order of 1011 cm−2 eV−1, an oxide charge density down to 1010 cm−2, and a breakdown field up to 11 MVcm. They are thus suitable as a gate dielectric in a thin-film transistor.
    Original languageUndefined
    Pages (from-to)G21-G28
    Number of pages8
    JournalJournal of the Electrochemical Society
    Volume155
    Issue number2
    DOIs
    Publication statusPublished - 1 Jan 2008

    Keywords

    • SC-ICF: Integrated Circuit Fabrication
    • IR-61694
    • METIS-250859
    • EWI-11676

    Cite this

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    title = "Low-temperature SiO2 layers deposited by combination of ECR plasma and supersonic silane/helium jet",
    abstract = "As the semiconductor industry strives toward wafer postprocessing and three-dimensional integration, a demand has arisen for high-quality thin films deposited at temperatures below 400°C. In this work, we present SiO2 films deposited at near room temperature, using a multipolar electron cyclotron resonance _ECR_ plasma source, introducing the SiH4 gas by using a highvelocity jet of silane diluted in helium. The electrical properties were studied under varying deposition parameters, such as gas flow rate, deposition pressure, and postdeposition and postmetallization annealing processes. At a low pressure, low SiH4 flow and high helium flow, device-quality SiO2 layers were obtained after a deposition combined with a 5 min postmetallization annealing at 400°C. These layers exhibited a refractive index of 1.46, an OSi ratio of 2, an interface trap density in the order of 1011 cm−2 eV−1, an oxide charge density down to 1010 cm−2, and a breakdown field up to 11 MVcm. They are thus suitable as a gate dielectric in a thin-film transistor.",
    keywords = "SC-ICF: Integrated Circuit Fabrication, IR-61694, METIS-250859, EWI-11676",
    author = "Kovalgin, {Alexeij Y.} and I.G. Isai and J. Holleman and Jurriaan Schmitz",
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    doi = "10.1149/1.2815627",
    language = "Undefined",
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    Low-temperature SiO2 layers deposited by combination of ECR plasma and supersonic silane/helium jet. / Kovalgin, Alexeij Y.; Isai, I.G.; Holleman, J.; Schmitz, Jurriaan.

    In: Journal of the Electrochemical Society, Vol. 155, No. 2, 01.01.2008, p. G21-G28.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Low-temperature SiO2 layers deposited by combination of ECR plasma and supersonic silane/helium jet

    AU - Kovalgin, Alexeij Y.

    AU - Isai, I.G.

    AU - Holleman, J.

    AU - Schmitz, Jurriaan

    N1 - 10.1149/1.2815627

    PY - 2008/1/1

    Y1 - 2008/1/1

    N2 - As the semiconductor industry strives toward wafer postprocessing and three-dimensional integration, a demand has arisen for high-quality thin films deposited at temperatures below 400°C. In this work, we present SiO2 films deposited at near room temperature, using a multipolar electron cyclotron resonance _ECR_ plasma source, introducing the SiH4 gas by using a highvelocity jet of silane diluted in helium. The electrical properties were studied under varying deposition parameters, such as gas flow rate, deposition pressure, and postdeposition and postmetallization annealing processes. At a low pressure, low SiH4 flow and high helium flow, device-quality SiO2 layers were obtained after a deposition combined with a 5 min postmetallization annealing at 400°C. These layers exhibited a refractive index of 1.46, an OSi ratio of 2, an interface trap density in the order of 1011 cm−2 eV−1, an oxide charge density down to 1010 cm−2, and a breakdown field up to 11 MVcm. They are thus suitable as a gate dielectric in a thin-film transistor.

    AB - As the semiconductor industry strives toward wafer postprocessing and three-dimensional integration, a demand has arisen for high-quality thin films deposited at temperatures below 400°C. In this work, we present SiO2 films deposited at near room temperature, using a multipolar electron cyclotron resonance _ECR_ plasma source, introducing the SiH4 gas by using a highvelocity jet of silane diluted in helium. The electrical properties were studied under varying deposition parameters, such as gas flow rate, deposition pressure, and postdeposition and postmetallization annealing processes. At a low pressure, low SiH4 flow and high helium flow, device-quality SiO2 layers were obtained after a deposition combined with a 5 min postmetallization annealing at 400°C. These layers exhibited a refractive index of 1.46, an OSi ratio of 2, an interface trap density in the order of 1011 cm−2 eV−1, an oxide charge density down to 1010 cm−2, and a breakdown field up to 11 MVcm. They are thus suitable as a gate dielectric in a thin-film transistor.

    KW - SC-ICF: Integrated Circuit Fabrication

    KW - IR-61694

    KW - METIS-250859

    KW - EWI-11676

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    DO - 10.1149/1.2815627

    M3 - Article

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    JO - Journal of the Electrochemical Society

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    SN - 0013-4651

    IS - 2

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