Low-temperature SiO2 layers deposited by combination of ECR plasma and supersonic silane/helium jet

Alexeij Y. Kovalgin, I.G. Isai, J. Holleman, Jurriaan Schmitz

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

As the semiconductor industry strives toward wafer postprocessing and three-dimensional integration, a demand has arisen for high-quality thin films deposited at temperatures below 400°C. In this work, we present SiO2 films deposited at near room temperature, using a multipolar electron cyclotron resonance _ECR_ plasma source, introducing the SiH4 gas by using a highvelocity jet of silane diluted in helium. The electrical properties were studied under varying deposition parameters, such as gas flow rate, deposition pressure, and postdeposition and postmetallization annealing processes. At a low pressure, low SiH4 flow and high helium flow, device-quality SiO2 layers were obtained after a deposition combined with a 5 min postmetallization annealing at 400°C. These layers exhibited a refractive index of 1.46, an OSi ratio of 2, an interface trap density in the order of 1011 cm−2 eV−1, an oxide charge density down to 1010 cm−2, and a breakdown field up to 11 MVcm. They are thus suitable as a gate dielectric in a thin-film transistor.
Original languageUndefined
Pages (from-to)G21-G28
Number of pages8
JournalJournal of the Electrochemical Society
Volume155
Issue number2
DOIs
Publication statusPublished - 1 Jan 2008

Keywords

  • SC-ICF: Integrated Circuit Fabrication
  • IR-61694
  • METIS-250859
  • EWI-11676

Cite this

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title = "Low-temperature SiO2 layers deposited by combination of ECR plasma and supersonic silane/helium jet",
abstract = "As the semiconductor industry strives toward wafer postprocessing and three-dimensional integration, a demand has arisen for high-quality thin films deposited at temperatures below 400°C. In this work, we present SiO2 films deposited at near room temperature, using a multipolar electron cyclotron resonance _ECR_ plasma source, introducing the SiH4 gas by using a highvelocity jet of silane diluted in helium. The electrical properties were studied under varying deposition parameters, such as gas flow rate, deposition pressure, and postdeposition and postmetallization annealing processes. At a low pressure, low SiH4 flow and high helium flow, device-quality SiO2 layers were obtained after a deposition combined with a 5 min postmetallization annealing at 400°C. These layers exhibited a refractive index of 1.46, an OSi ratio of 2, an interface trap density in the order of 1011 cm−2 eV−1, an oxide charge density down to 1010 cm−2, and a breakdown field up to 11 MVcm. They are thus suitable as a gate dielectric in a thin-film transistor.",
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Low-temperature SiO2 layers deposited by combination of ECR plasma and supersonic silane/helium jet. / Kovalgin, Alexeij Y.; Isai, I.G.; Holleman, J.; Schmitz, Jurriaan.

In: Journal of the Electrochemical Society, Vol. 155, No. 2, 01.01.2008, p. G21-G28.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Low-temperature SiO2 layers deposited by combination of ECR plasma and supersonic silane/helium jet

AU - Kovalgin, Alexeij Y.

AU - Isai, I.G.

AU - Holleman, J.

AU - Schmitz, Jurriaan

N1 - 10.1149/1.2815627

PY - 2008/1/1

Y1 - 2008/1/1

N2 - As the semiconductor industry strives toward wafer postprocessing and three-dimensional integration, a demand has arisen for high-quality thin films deposited at temperatures below 400°C. In this work, we present SiO2 films deposited at near room temperature, using a multipolar electron cyclotron resonance _ECR_ plasma source, introducing the SiH4 gas by using a highvelocity jet of silane diluted in helium. The electrical properties were studied under varying deposition parameters, such as gas flow rate, deposition pressure, and postdeposition and postmetallization annealing processes. At a low pressure, low SiH4 flow and high helium flow, device-quality SiO2 layers were obtained after a deposition combined with a 5 min postmetallization annealing at 400°C. These layers exhibited a refractive index of 1.46, an OSi ratio of 2, an interface trap density in the order of 1011 cm−2 eV−1, an oxide charge density down to 1010 cm−2, and a breakdown field up to 11 MVcm. They are thus suitable as a gate dielectric in a thin-film transistor.

AB - As the semiconductor industry strives toward wafer postprocessing and three-dimensional integration, a demand has arisen for high-quality thin films deposited at temperatures below 400°C. In this work, we present SiO2 films deposited at near room temperature, using a multipolar electron cyclotron resonance _ECR_ plasma source, introducing the SiH4 gas by using a highvelocity jet of silane diluted in helium. The electrical properties were studied under varying deposition parameters, such as gas flow rate, deposition pressure, and postdeposition and postmetallization annealing processes. At a low pressure, low SiH4 flow and high helium flow, device-quality SiO2 layers were obtained after a deposition combined with a 5 min postmetallization annealing at 400°C. These layers exhibited a refractive index of 1.46, an OSi ratio of 2, an interface trap density in the order of 1011 cm−2 eV−1, an oxide charge density down to 1010 cm−2, and a breakdown field up to 11 MVcm. They are thus suitable as a gate dielectric in a thin-film transistor.

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