By enforcing layer thickness variations of an amorphous silicon thin film, the location of grain boundaries after laser annealing can be controlled to great extend. This allowes the positioning of TFTs in between the main crystal boundaries, offering high mobility and low transistor-to-transistor variability. In this paper we present our latest results on this subject including improved NMOS and PMOS mobility, inverter characteristics, and fully functional 51-stage ring oscillators with oscilliation frequencies in MHz-range.
|Title of host publication||Proceedings of the 5th International Thin Film Transistor Conference ITC'09|
|Place of Publication||Paris, France|
|Number of pages||4|
|ISBN (Print)||not assigned|
|Publication status||Published - 5 Mar 2009|
- SC-ICF: Integrated Circuit Fabrication