Low temperature TFTs with poly-stripes

I. Brunets, A. Boogaard, S.M. Smits, H. de Vries, A.A.I. Aarnink, J. Holleman, A.Y. Kovalgin, J. Schmitz

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    Abstract

    By enforcing layer thickness variations of an amorphous silicon thin film, the location of grain boundaries after laser annealing can be controlled to great extend. This allowes the positioning of TFTs in between the main crystal boundaries, offering high mobility and low transistor-to-transistor variability. In this paper we present our latest results on this subject including improved NMOS and PMOS mobility, inverter characteristics, and fully functional 51-stage ring oscillators with oscilliation frequencies in MHz-range.
    Original languageEnglish
    Title of host publicationProceedings of the 5th International Thin Film Transistor Conference ITC'09
    Place of PublicationParis, France
    PublisherEcole Polytechnique
    Pages62-65
    Number of pages4
    ISBN (Print)not assigned
    Publication statusPublished - 5 Mar 2009

    Publication series

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    PublisherEcole Polytechnique

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    Keywords

    • SC-ICF: Integrated Circuit Fabrication
    • METIS-263783
    • IR-62787
    • EWI-15230

    Cite this

    Brunets, I., Boogaard, A., Smits, S. M., de Vries, H., Aarnink, A. A. I., Holleman, J., ... Schmitz, J. (2009). Low temperature TFTs with poly-stripes. In Proceedings of the 5th International Thin Film Transistor Conference ITC'09 (pp. 62-65). Paris, France: Ecole Polytechnique.