LPCVD silicon nitride-on-silicon spacer technology

H. W. Van Zeijl*, L. K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)
8 Downloads (Pure)

Abstract

LPCVD silicon nitride is investigated for use as spacer material in bipolar emitter-base structures where the nitride is deposited directly on the silicon and thus becomes the e-b junction passivation material. This has a significant advantage for dimensional control due to nitride's high tolerance to HF etching, but several other material properties of the nitride, as compared to silicon dioxides, are points of concern and are addressed in this work: higher thin-film stress, lower diffusivity of hydrogen, higher electrical conductivity and more fixed charge storage. The processing parameters and device design are varied and correlated to the device characteristics. Conditions have been found that allow the fabrication of transistors with high yield and good I-V characteristics.

Original languageEnglish
Title of host publicationMicroelectronics technology and devices: SBMICRO 2005
PublisherThe Electrochemical Society Inc.
Pages153-162
Number of pages10
Publication statusPublished - 1 Dec 2005
Externally publishedYes
Event20th Symposium on Microelectronics Technology and Devices, SBMicro 2005 - Florianopolis, Brazil
Duration: 4 Sep 20057 Sep 2005
Conference number: 20

Conference

Conference20th Symposium on Microelectronics Technology and Devices, SBMicro 2005
Abbreviated titleSBMicro 2005
CountryBrazil
CityFlorianopolis
Period4/09/057/09/05

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  • Cite this

    Van Zeijl, H. W., & Nanver, L. K. (2005). LPCVD silicon nitride-on-silicon spacer technology. In Microelectronics technology and devices: SBMICRO 2005 (pp. 153-162). The Electrochemical Society Inc..