LPCVD SiO2 layers prepared from SiH4 and O2 at 450 degrees C in a rapid thermal processing reactor

C. Cobianu, J.B. Rem, J.H. Klootwijk, Marcel H.H. Weusthof, J. Holleman, P.H. Woerlee

    Research output: Other contributionOther research output

    Original languageUndefined
    Place of PublicationVenetie
    Publication statusPublished - 10 Sep 1995

    Keywords

    • METIS-114871

    Cite this