LPCVD SiO2 layers prepared from SiH4 and O2 at 450 degrees C in a rapid thermal processing reactor

C. Cobianu, J.B. Rem, J.H. Klootwijk, Marcel H.H. Weusthof, J. Holleman, P.H. Woerlee

    Research output: Other contributionOther research output

    Original languageUndefined
    Place of PublicationVenetie
    Publication statusPublished - 10 Sep 1995

    Keywords

    • METIS-114871

    Cite this

    Cobianu, C., Rem, J. B., Klootwijk, J. H., Weusthof, M. H. H., Holleman, J., & Woerlee, P. H. (1995, Sep 10). LPCVD SiO2 layers prepared from SiH4 and O2 at 450 degrees C in a rapid thermal processing reactor. Venetie.