LPCVD SiO2 layers prepared from SiH4 and O2 at 450 degrees C in a rapid thermal processing reactor

C. Cobianu, J.B. Rem, J.H. Klootwijk, Marcel H.H. Weusthof, J. Holleman, P.H. Woerlee

Research output: Contribution to journal › Article › Academic › peer-review

Keywords

@article{d0e454256e3f423c8ce230c7d39e1102,

title = "LPCVD SiO2 layers prepared from SiH4 and O2 at 450 degrees C in a rapid thermal processing reactor",

keywords = "METIS-112059",

author = "C. Cobianu and J.B. Rem and J.H. Klootwijk and Weusthof, {Marcel H.H.} and J. Holleman and P.H. Woerlee",

year = "1995",

language = "Undefined",

volume = "5",

pages = "C5.1005--C5.1011",

journal = "Journal de physique IV",

issn = "1155-4339",

publisher = "EDP Sciences",

number = "juin",

}

TY - JOUR

T1 - LPCVD SiO2 layers prepared from SiH4 and O2 at 450 degrees C in a rapid thermal processing reactor

AU - Cobianu, C.

AU - Rem, J.B.

AU - Klootwijk, J.H.

AU - Weusthof, Marcel H.H.

AU - Holleman, J.

AU - Woerlee, P.H.

PY - 1995

Y1 - 1995

KW - METIS-112059

M3 - Article

SN - 1155-4339

VL - 5

SP - C5.1005-C5.1011

JO - Journal de physique IV

JF - Journal de physique IV

IS - juin

ER -