Luminescence properties of silicon nanocrystals in Al2O3 fabricated at low temperature

R.J. Walters, R. van Loon, A. Polman, I. Brunets, G. Piccolo, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    1 Citation (Scopus)
    22 Downloads (Pure)

    Abstract

    Optically active silicon nanocrystals can be incorporated in alumina (Al2O3) using low-temperature CMOS-compatible processing. Luminescence is tentatively attributed to exciton recombination in silicon nanocrystals and associated oxygen related surface states.
    Original languageEnglish
    Title of host publication5th IEEE International Conference on Group IV Photonics, 2008
    Place of PublicationPiscataway
    PublisherIEEE Computer Society Press
    Pages41-42
    Number of pages2
    ISBN (Print)978-1-4244-1768-1
    DOIs
    Publication statusPublished - 17 Sep 2008
    Event5th IEEE International Conference on Group IV Photonics, GFP 2008 - Sorrento, Italy
    Duration: 17 Sep 200819 Sep 2008
    Conference number: 5

    Conference

    Conference5th IEEE International Conference on Group IV Photonics, GFP 2008
    Abbreviated titleGFP 2008
    CountryItaly
    CitySorrento
    Period17/09/0819/09/08

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    Keywords

    • SC-ICF: Integrated Circuit Fabrication
    • EWI-14588
    • IR-62602
    • METIS-263702
    • SC-SBLE: Silicon-based Light Emitters

    Cite this

    Walters, R. J., van Loon, R., Polman, A., Brunets, I., Piccolo, G., & Schmitz, J. (2008). Luminescence properties of silicon nanocrystals in Al2O3 fabricated at low temperature. In 5th IEEE International Conference on Group IV Photonics, 2008 (pp. 41-42). Piscataway: IEEE Computer Society Press. https://doi.org/10.1109/GROUP4.2008.4638090