Luminescence properties of silicon nanocrystals in Al2O3 fabricated at low temperature

R.J. Walters; R. van Loon; A. Polman; I. Brunets; G. Piccolo; Jurriaan Schmitz

doi:10.1109/GROUP4.2008.4638090

Luminescence properties of silicon nanocrystals in Al₂O₃ fabricated at low temperature

R.J. Walters
, R. van Loon
, A. Polman
, I. Brunets
, G. Piccolo
, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

25 Downloads (Pure)

Abstract

Optically active silicon nanocrystals can be incorporated in alumina (Al2O3) using low-temperature CMOS-compatible processing. Luminescence is tentatively attributed to exciton recombination in silicon nanocrystals and associated oxygen related surface states.

Original language	English
Title of host publication	5th IEEE International Conference on Group IV Photonics, 2008
Place of Publication	Piscataway
Publisher	IEEE
Pages	41-42
Number of pages	2
ISBN (Print)	978-1-4244-1768-1
DOIs	https://doi.org/10.1109/GROUP4.2008.4638090
Publication status	Published - 17 Sept 2008
Event	5th IEEE International Conference on Group IV Photonics, GFP 2008 - Sorrento, Italy Duration: 17 Sept 2008 → 19 Sept 2008 Conference number: 5

Conference

Conference	5th IEEE International Conference on Group IV Photonics, GFP 2008
Abbreviated title	GFP 2008
Country/Territory	Italy
City	Sorrento
Period	17/09/08 → 19/09/08

Keywords

SC-ICF: Integrated Circuit Fabrication
EWI-14588
IR-62602
METIS-263702
SC-SBLE: Silicon-based Light Emitters

Access to Document

10.1109/GROUP4.2008.4638090

Cite this

@inproceedings{1ab51e29cfe14f2997a0b70fc81b0607,

title = "Luminescence properties of silicon nanocrystals in Al2O3 fabricated at low temperature",

abstract = "Optically active silicon nanocrystals can be incorporated in alumina (Al2O3) using low-temperature CMOS-compatible processing. Luminescence is tentatively attributed to exciton recombination in silicon nanocrystals and associated oxygen related surface states.",

keywords = "SC-ICF: Integrated Circuit Fabrication, EWI-14588, IR-62602, METIS-263702, SC-SBLE: Silicon-based Light Emitters",

author = "R.J. Walters and \{van Loon\}, R. and A. Polman and I. Brunets and G. Piccolo and Jurriaan Schmitz",

note = "10.1109/GROUP4.2008.4638090 ; 5th IEEE International Conference on Group IV Photonics, GFP 2008, GFP 2008 ; Conference date: 17-09-2008 Through 19-09-2008",

year = "2008",

month = sep,

day = "17",

doi = "10.1109/GROUP4.2008.4638090",

language = "English",

isbn = "978-1-4244-1768-1",

pages = "41--42",

booktitle = "5th IEEE International Conference on Group IV Photonics, 2008",

publisher = "IEEE",

address = "United States",

}

Walters, RJ, van Loon, R, Polman, A, Brunets, I, Piccolo, G & Schmitz, J 2008, Luminescence properties of silicon nanocrystals in Al₂O₃ fabricated at low temperature. in 5th IEEE International Conference on Group IV Photonics, 2008. IEEE, Piscataway, pp. 41-42, 5th IEEE International Conference on Group IV Photonics, GFP 2008, Sorrento, Italy, 17/09/08. https://doi.org/10.1109/GROUP4.2008.4638090

TY - GEN

T1 - Luminescence properties of silicon nanocrystals in Al2O3 fabricated at low temperature

AU - Walters, R.J.

AU - van Loon, R.

AU - Polman, A.

AU - Brunets, I.

AU - Piccolo, G.

AU - Schmitz, Jurriaan

N1 - Conference code: 5

PY - 2008/9/17

Y1 - 2008/9/17

N2 - Optically active silicon nanocrystals can be incorporated in alumina (Al2O3) using low-temperature CMOS-compatible processing. Luminescence is tentatively attributed to exciton recombination in silicon nanocrystals and associated oxygen related surface states.

AB - Optically active silicon nanocrystals can be incorporated in alumina (Al2O3) using low-temperature CMOS-compatible processing. Luminescence is tentatively attributed to exciton recombination in silicon nanocrystals and associated oxygen related surface states.

KW - SC-ICF: Integrated Circuit Fabrication

KW - EWI-14588

KW - IR-62602

KW - METIS-263702

KW - SC-SBLE: Silicon-based Light Emitters

U2 - 10.1109/GROUP4.2008.4638090

DO - 10.1109/GROUP4.2008.4638090

M3 - Conference contribution

SN - 978-1-4244-1768-1

SP - 41

EP - 42

BT - 5th IEEE International Conference on Group IV Photonics, 2008

PB - IEEE

CY - Piscataway

T2 - 5th IEEE International Conference on Group IV Photonics, GFP 2008

Y2 - 17 September 2008 through 19 September 2008

ER -