Magnetic domain engineering in SrRuO3 thin films

Wenbo Wang, Lin Li, Junhua Liu, Binbin Chen, Yaoyao Ji, Jun Wang, Guanglei Cheng, Yalin Lu, Guus Rijnders, Gertjan Koster, Weida Wu, Zhaoliang Liao*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

11 Downloads (Pure)

Abstract

Magnetic domain engineering in ferromagnetic thin films is a very important route toward the rational design of spintronics and memory devices. Although the magnetic domain formation has been extensively studied, artificial control of magnetic domain remains challenging. Here, we present the control of magnetic domain formation in paradigmatic SrRuO3/SrTiO3 heterostructures via structural domain engineering. The formation of structural twin domains in SrRuO3 films can be well controlled by breaking the SrTiO3 substrate symmetry through engineering miscut direction. The combination of x-ray diffraction analysis of structural twin domains and magnetic imaging of reversal process demonstrates a one-to-one correspondence between structural domains and magnetic domains, which results in multi-step magnetization switching and anomalous Hall effect in films with twin domains. Our work sheds light on the control of the magnetic domain formation via structural domain engineering, which will pave a path toward desired properties and devices applications.

Original languageEnglish
Article number73
Journalnpj Quantum Materials
Volume5
Issue number1
DOIs
Publication statusPublished - 16 Oct 2020

Fingerprint Dive into the research topics of 'Magnetic domain engineering in SrRuO<sub>3</sub> thin films'. Together they form a unique fingerprint.

Cite this