Abstract
Magnetic stray fields of Co‐Cr microstrips are investigated for bit stabilization in a vertical Bloch line memory (VBLM). The stray fields were revealed using Lorentz force based Foucault and differential phase contrast (DPC) techniques in a transmission electron microscope. The assumed shape of the stray fields for VBLM use has been experimentally verified. Agreement between experiment and simulation is obtained.
Original language | English |
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Pages (from-to) | 3002-3007 |
Number of pages | 6 |
Journal | Journal of Applied Physics |
Volume | 75 |
Issue number | 6 |
DOIs | |
Publication status | Published - 1994 |
Keywords
- SMI-TST: From 2006 in EWI-TST
- SMI-MAT: MATERIALS