Magnetic stray fields of Co‐Cr microstrips are investigated for bit stabilization in a vertical Bloch line memory (VBLM). The stray fields were revealed using Lorentz force based Foucault and differential phase contrast (DPC) techniques in a transmission electron microscope. The assumed shape of the stray fields for VBLM use has been experimentally verified. Agreement between experiment and simulation is obtained.
- SMI-TST: From 2006 in EWI-TST
- SMI-MAT: MATERIALS