Magnetic stray fields of Co‐Cr microstrips are investigated for bit stabilization in a vertical Bloch line memory (VBLM). The stray fields were revealed using Lorentz force based Foucault and differential phase contrast (DPC) techniques in a transmission electron microscope. The assumed shape of the stray fields for VBLM use has been experimentally verified. Agreement between experiment and simulation is obtained.
|Number of pages||6|
|Journal||Journal of Applied Physics|
|Publication status||Published - 1994|
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