Magnetic tunnel contacts to silicon with low-work-function ytterbium nanolayers

R.S. Patel, S.P. Dash, Machiel Pieter de Jong, R. Jansen

Research output: Contribution to journalArticleAcademicpeer-review

16 Citations (Scopus)

Abstract

Unambiguous proof of spin transport in semiconductor spintronic devices requires a control experiment to exclude spurious signals that arise from the presence of the ferromagnetic contacts. It is shown here that insertion of a low-work-function Yb nanolayer in ferromagnetic tunnel contacts to silicon allows a selective suppression of the tunnel spin polarization for 2 nm of Yb and simultaneous control of the Schottky barrier height. The insertion of a nonmagnetic nanolayer provides a versatile method to exclude artifacts and a solution for nanoscale devices or other geometries in which the frequently employed Hanle effect cannot be applied and a control experiment did not exist.
Original languageUndefined
Article number10.1063/1.3159638
Pages (from-to)016107
Number of pages3
JournalJournal of applied physics
Volume106
Issue number1
DOIs
Publication statusPublished - 10 Jul 2009

Keywords

  • EWI-16459
  • IR-69037
  • METIS-264434

Cite this

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Magnetic tunnel contacts to silicon with low-work-function ytterbium nanolayers. / Patel, R.S.; Dash, S.P.; de Jong, Machiel Pieter; Jansen, R.

In: Journal of applied physics, Vol. 106, No. 1, 10.1063/1.3159638, 10.07.2009, p. 016107.

Research output: Contribution to journalArticleAcademicpeer-review

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T1 - Magnetic tunnel contacts to silicon with low-work-function ytterbium nanolayers

AU - Patel, R.S.

AU - Dash, S.P.

AU - de Jong, Machiel Pieter

AU - Jansen, R.

N1 - 10.1063/1.3159638

PY - 2009/7/10

Y1 - 2009/7/10

N2 - Unambiguous proof of spin transport in semiconductor spintronic devices requires a control experiment to exclude spurious signals that arise from the presence of the ferromagnetic contacts. It is shown here that insertion of a low-work-function Yb nanolayer in ferromagnetic tunnel contacts to silicon allows a selective suppression of the tunnel spin polarization for 2 nm of Yb and simultaneous control of the Schottky barrier height. The insertion of a nonmagnetic nanolayer provides a versatile method to exclude artifacts and a solution for nanoscale devices or other geometries in which the frequently employed Hanle effect cannot be applied and a control experiment did not exist.

AB - Unambiguous proof of spin transport in semiconductor spintronic devices requires a control experiment to exclude spurious signals that arise from the presence of the ferromagnetic contacts. It is shown here that insertion of a low-work-function Yb nanolayer in ferromagnetic tunnel contacts to silicon allows a selective suppression of the tunnel spin polarization for 2 nm of Yb and simultaneous control of the Schottky barrier height. The insertion of a nonmagnetic nanolayer provides a versatile method to exclude artifacts and a solution for nanoscale devices or other geometries in which the frequently employed Hanle effect cannot be applied and a control experiment did not exist.

KW - EWI-16459

KW - IR-69037

KW - METIS-264434

U2 - 10.1063/1.3159638

DO - 10.1063/1.3159638

M3 - Article

VL - 106

SP - 016107

JO - Journal of applied physics

JF - Journal of applied physics

SN - 0021-8979

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M1 - 10.1063/1.3159638

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