Magnetic tunnel contacts to silicon with low-work-function ytterbium nanolayers

R.S. Patel, S.P. Dash, Machiel Pieter de Jong, R. Jansen

    Research output: Contribution to journalArticleAcademicpeer-review

    16 Citations (Scopus)

    Abstract

    Unambiguous proof of spin transport in semiconductor spintronic devices requires a control experiment to exclude spurious signals that arise from the presence of the ferromagnetic contacts. It is shown here that insertion of a low-work-function Yb nanolayer in ferromagnetic tunnel contacts to silicon allows a selective suppression of the tunnel spin polarization for 2 nm of Yb and simultaneous control of the Schottky barrier height. The insertion of a nonmagnetic nanolayer provides a versatile method to exclude artifacts and a solution for nanoscale devices or other geometries in which the frequently employed Hanle effect cannot be applied and a control experiment did not exist.
    Original languageUndefined
    Article number10.1063/1.3159638
    Pages (from-to)016107
    Number of pages3
    JournalJournal of applied physics
    Volume106
    Issue number1
    DOIs
    Publication statusPublished - 10 Jul 2009

    Keywords

    • EWI-16459
    • IR-69037
    • METIS-264434

    Cite this

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    abstract = "Unambiguous proof of spin transport in semiconductor spintronic devices requires a control experiment to exclude spurious signals that arise from the presence of the ferromagnetic contacts. It is shown here that insertion of a low-work-function Yb nanolayer in ferromagnetic tunnel contacts to silicon allows a selective suppression of the tunnel spin polarization for 2 nm of Yb and simultaneous control of the Schottky barrier height. The insertion of a nonmagnetic nanolayer provides a versatile method to exclude artifacts and a solution for nanoscale devices or other geometries in which the frequently employed Hanle effect cannot be applied and a control experiment did not exist.",
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    Magnetic tunnel contacts to silicon with low-work-function ytterbium nanolayers. / Patel, R.S.; Dash, S.P.; de Jong, Machiel Pieter; Jansen, R.

    In: Journal of applied physics, Vol. 106, No. 1, 10.1063/1.3159638, 10.07.2009, p. 016107.

    Research output: Contribution to journalArticleAcademicpeer-review

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    T1 - Magnetic tunnel contacts to silicon with low-work-function ytterbium nanolayers

    AU - Patel, R.S.

    AU - Dash, S.P.

    AU - de Jong, Machiel Pieter

    AU - Jansen, R.

    N1 - 10.1063/1.3159638

    PY - 2009/7/10

    Y1 - 2009/7/10

    N2 - Unambiguous proof of spin transport in semiconductor spintronic devices requires a control experiment to exclude spurious signals that arise from the presence of the ferromagnetic contacts. It is shown here that insertion of a low-work-function Yb nanolayer in ferromagnetic tunnel contacts to silicon allows a selective suppression of the tunnel spin polarization for 2 nm of Yb and simultaneous control of the Schottky barrier height. The insertion of a nonmagnetic nanolayer provides a versatile method to exclude artifacts and a solution for nanoscale devices or other geometries in which the frequently employed Hanle effect cannot be applied and a control experiment did not exist.

    AB - Unambiguous proof of spin transport in semiconductor spintronic devices requires a control experiment to exclude spurious signals that arise from the presence of the ferromagnetic contacts. It is shown here that insertion of a low-work-function Yb nanolayer in ferromagnetic tunnel contacts to silicon allows a selective suppression of the tunnel spin polarization for 2 nm of Yb and simultaneous control of the Schottky barrier height. The insertion of a nonmagnetic nanolayer provides a versatile method to exclude artifacts and a solution for nanoscale devices or other geometries in which the frequently employed Hanle effect cannot be applied and a control experiment did not exist.

    KW - EWI-16459

    KW - IR-69037

    KW - METIS-264434

    U2 - 10.1063/1.3159638

    DO - 10.1063/1.3159638

    M3 - Article

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    SP - 016107

    JO - Journal of applied physics

    JF - Journal of applied physics

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