Magnetic tunnel contacts to silicon with low-work-function ytterbium nanolayers

R.S. Patel, S.P. Dash, Machiel Pieter de Jong, R. Jansen

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    18 Citations (Scopus)


    Unambiguous proof of spin transport in semiconductor spintronic devices requires a control experiment to exclude spurious signals that arise from the presence of the ferromagnetic contacts. It is shown here that insertion of a low-work-function Yb nanolayer in ferromagnetic tunnel contacts to silicon allows a selective suppression of the tunnel spin polarization for 2 nm of Yb and simultaneous control of the Schottky barrier height. The insertion of a nonmagnetic nanolayer provides a versatile method to exclude artifacts and a solution for nanoscale devices or other geometries in which the frequently employed Hanle effect cannot be applied and a control experiment did not exist.
    Original languageUndefined
    Article number10.1063/1.3159638
    Pages (from-to)016107
    Number of pages3
    JournalJournal of Applied Physics
    Issue number1
    Publication statusPublished - 10 Jul 2009


    • EWI-16459
    • IR-69037
    • METIS-264434

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