Magnetic tunnel junctions with Co:TiO2 magnetic semiconductor electrodes

Y.J. Lee, A.K. Abhishek Kumar, A. Kumar, I.J. Vera Marun, Machiel Pieter de Jong, R. Jansen

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

Spin-polarized tunneling is investigated in magnetic tunnel junctions containing an ultrathin interfacial layer of Co:TiO2 magnetic semiconductor. The Co:TiO2 layers (0 to 1 nm thick) are inserted at the SrTiO3/Co interface in La0.67Sr0.33MnO3/SrTiO3/Co tunnel junctions. For all junctions we find a negative tunnel magnetoresistance, which decreases upon the insertion of Co:TiO2, while the junction resistance increases strongly. This suggests that the ultrathin Co:TiO2 is a paramagnetic insulator that acts as an additional tunnel barrier, in contrast to thick (180 nm) layers grown under comparable conditions, which exhibit metallic impurity band conduction and room-temperature ferromagnetism.
Original languageUndefined
Pages (from-to)1683-1686
Number of pages4
JournalIEEE transactions on magnetics
Volume46
Issue number6
DOIs
Publication statusPublished - 6 Jun 2010

Keywords

  • Spintronics
  • magnetic tunnel junction
  • magnetic semiconductor
  • IR-75549
  • Cobalt-doped TiO2
  • La0.67Sro.33MnO3
  • METIS-279129
  • EWI-19221

Cite this

Lee, Y. J., Abhishek Kumar, A. K., Kumar, A., Vera Marun, I. J., de Jong, M. P., & Jansen, R. (2010). Magnetic tunnel junctions with Co:TiO2 magnetic semiconductor electrodes. IEEE transactions on magnetics, 46(6), 1683-1686. https://doi.org/10.1109/TMAG.2010.2046019
Lee, Y.J. ; Abhishek Kumar, A.K. ; Kumar, A. ; Vera Marun, I.J. ; de Jong, Machiel Pieter ; Jansen, R. / Magnetic tunnel junctions with Co:TiO2 magnetic semiconductor electrodes. In: IEEE transactions on magnetics. 2010 ; Vol. 46, No. 6. pp. 1683-1686.
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title = "Magnetic tunnel junctions with Co:TiO2 magnetic semiconductor electrodes",
abstract = "Spin-polarized tunneling is investigated in magnetic tunnel junctions containing an ultrathin interfacial layer of Co:TiO2 magnetic semiconductor. The Co:TiO2 layers (0 to 1 nm thick) are inserted at the SrTiO3/Co interface in La0.67Sr0.33MnO3/SrTiO3/Co tunnel junctions. For all junctions we find a negative tunnel magnetoresistance, which decreases upon the insertion of Co:TiO2, while the junction resistance increases strongly. This suggests that the ultrathin Co:TiO2 is a paramagnetic insulator that acts as an additional tunnel barrier, in contrast to thick (180 nm) layers grown under comparable conditions, which exhibit metallic impurity band conduction and room-temperature ferromagnetism.",
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Lee, YJ, Abhishek Kumar, AK, Kumar, A, Vera Marun, IJ, de Jong, MP & Jansen, R 2010, 'Magnetic tunnel junctions with Co:TiO2 magnetic semiconductor electrodes' IEEE transactions on magnetics, vol. 46, no. 6, pp. 1683-1686. https://doi.org/10.1109/TMAG.2010.2046019

Magnetic tunnel junctions with Co:TiO2 magnetic semiconductor electrodes. / Lee, Y.J.; Abhishek Kumar, A.K.; Kumar, A.; Vera Marun, I.J.; de Jong, Machiel Pieter; Jansen, R.

In: IEEE transactions on magnetics, Vol. 46, No. 6, 06.06.2010, p. 1683-1686.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Magnetic tunnel junctions with Co:TiO2 magnetic semiconductor electrodes

AU - Lee, Y.J.

AU - Abhishek Kumar, A.K.

AU - Kumar, A.

AU - Vera Marun, I.J.

AU - de Jong, Machiel Pieter

AU - Jansen, R.

N1 - 10.1109/TMAG.2010.2046019

PY - 2010/6/6

Y1 - 2010/6/6

N2 - Spin-polarized tunneling is investigated in magnetic tunnel junctions containing an ultrathin interfacial layer of Co:TiO2 magnetic semiconductor. The Co:TiO2 layers (0 to 1 nm thick) are inserted at the SrTiO3/Co interface in La0.67Sr0.33MnO3/SrTiO3/Co tunnel junctions. For all junctions we find a negative tunnel magnetoresistance, which decreases upon the insertion of Co:TiO2, while the junction resistance increases strongly. This suggests that the ultrathin Co:TiO2 is a paramagnetic insulator that acts as an additional tunnel barrier, in contrast to thick (180 nm) layers grown under comparable conditions, which exhibit metallic impurity band conduction and room-temperature ferromagnetism.

AB - Spin-polarized tunneling is investigated in magnetic tunnel junctions containing an ultrathin interfacial layer of Co:TiO2 magnetic semiconductor. The Co:TiO2 layers (0 to 1 nm thick) are inserted at the SrTiO3/Co interface in La0.67Sr0.33MnO3/SrTiO3/Co tunnel junctions. For all junctions we find a negative tunnel magnetoresistance, which decreases upon the insertion of Co:TiO2, while the junction resistance increases strongly. This suggests that the ultrathin Co:TiO2 is a paramagnetic insulator that acts as an additional tunnel barrier, in contrast to thick (180 nm) layers grown under comparable conditions, which exhibit metallic impurity band conduction and room-temperature ferromagnetism.

KW - Spintronics

KW - magnetic tunnel junction

KW - magnetic semiconductor

KW - IR-75549

KW - Cobalt-doped TiO2

KW - La0.67Sro.33MnO3

KW - METIS-279129

KW - EWI-19221

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EP - 1686

JO - IEEE transactions on magnetics

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