Magnetic tunnel junctions with Co:TiO2 magnetic semiconductor electrodes

Y.J. Lee, A.K. Abhishek Kumar, A. Kumar, I.J. Vera Marun, Machiel Pieter de Jong, R. Jansen

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    Abstract

    Spin-polarized tunneling is investigated in magnetic tunnel junctions containing an ultrathin interfacial layer of Co:TiO2 magnetic semiconductor. The Co:TiO2 layers (0 to 1 nm thick) are inserted at the SrTiO3/Co interface in La0.67Sr0.33MnO3/SrTiO3/Co tunnel junctions. For all junctions we find a negative tunnel magnetoresistance, which decreases upon the insertion of Co:TiO2, while the junction resistance increases strongly. This suggests that the ultrathin Co:TiO2 is a paramagnetic insulator that acts as an additional tunnel barrier, in contrast to thick (180 nm) layers grown under comparable conditions, which exhibit metallic impurity band conduction and room-temperature ferromagnetism.
    Original languageUndefined
    Pages (from-to)1683-1686
    Number of pages4
    JournalIEEE transactions on magnetics
    Volume46
    Issue number6
    DOIs
    Publication statusPublished - 6 Jun 2010

    Keywords

    • Spintronics
    • magnetic tunnel junction
    • magnetic semiconductor
    • IR-75549
    • Cobalt-doped TiO2
    • La0.67Sro.33MnO3
    • METIS-279129
    • EWI-19221

    Cite this

    Lee, Y. J., Abhishek Kumar, A. K., Kumar, A., Vera Marun, I. J., de Jong, M. P., & Jansen, R. (2010). Magnetic tunnel junctions with Co:TiO2 magnetic semiconductor electrodes. IEEE transactions on magnetics, 46(6), 1683-1686. https://doi.org/10.1109/TMAG.2010.2046019