Magnetization reversal mechanism in La0.67Sr0.33MnO3 thin films on NdGaO3 substrates

M. Mathews, Evert Pieter Houwman, J.A. Boschker, Augustinus J.H.M. Rijnders, David H.A. Blank

Research output: Contribution to journalArticleAcademic

Abstract

The field angle dependence of the coercive field of La0.67Sr0.33MnO3 thin films grown epitaxially on NdGaO3 substrates with different crystallographic orientations was determined. All films show uniaxial anisotropy. The angle dependence of the coercivity is best described by a two-phase model, explaining the strong increase in the coercive field for increasing field angles, away from the easy axis direction, as well as the sharp decrease for angles close to the hard direction. This implies that magnetization reversal starts with the depinning of domain walls, analogous to the Kondorsky model. With increasing field the reversal in the domains is not abrupt, but is determined by the gradual displacement of the domain walls. These results are of significance for understanding and possibly engineering of the switching behavior of magnetic tunnel junctions.
Original languageUndefined
Pages (from-to)013904-1-013904-5
JournalJournal of Applied Physics
Volume107
Issue number1
DOIs
Publication statusPublished - 2010

Keywords

  • IR-72404

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