Manipulating Electronic States at Oxide Interfaces Using Focused Micro X-Rays from Standard Lab Sources

Nicola Poccia*, Alessandro Ricci, Francesco Coneri, Martin Stehno, Gaetano Campi, Nicola Demitri, Giorgio Bais, X. Renshaw Wang, Hans Hilgenkamp

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

2 Citations (Scopus)
13 Downloads (Pure)


Recently, X-ray illumination, using synchrotron radiation, has been used to manipulate defects, stimulate self-organization, and to probe their structure. Here, we explore a method of defect-engineering low-dimensional systems using focused laboratory-scale X-ray sources. We demonstrate an irreversible change in the conducting properties of the two-dimensional electron gas at the interface between the complex oxide materials LaAlO 3 and SrTiO 3 by X-ray irradiation. The electrical resistance is monitored during exposure as the irradiated regions are driven into a high-resistance state. Our results suggest attention shall be paid on electronic structure modification in X-ray spectroscopic studies and highlight large-area defect manipulation and direct device patterning as possible new fields of application for focused laboratory X-ray sources.

Original languageEnglish
Pages (from-to)1267-1272
Number of pages6
JournalJournal of superconductivity and novel magnetism
Issue number4
Publication statusPublished - 1 Apr 2015


  • Focused X-ray
  • Functional oxides
  • Quasi-twodimensional electron gas
  • Resistive switching
  • 2023 OA procedure


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