Manipulation of growth modes in heteroepitaxy: Ni-Cu(111)

W.C.U. Wulfhekel, Ingo Beckmann, Nuphar N. Lipkin, G. Rosenfeld, Bene Poelsema, George Comsa

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Abstract

Growth manipulation methods, which have been successfully used to improve the growth of homoepitaxialfilms, are applied to molecular beam epitaxy of the heteroepitaxial system Ni/Cu(111). The procedures applied are temperature reduction during nucleation and pulsed ion bombardment during deposition. While the first does not lead to smoother films, the ion beam assisted growth is successful in reducing the film roughness.
Original languageEnglish
Pages (from-to)3492-3494
Number of pages3
JournalApplied physics letters
Volume69
Issue number23
DOIs
Publication statusPublished - 1996

Keywords

  • METIS-128936
  • IR-98124

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