Manipulation of growth modes in heteroepitaxy: Ni-Cu(111)

W.C.U. Wulfhekel; Ingo Beckmann; Nuphar N. Lipkin; G. Rosenfeld; Bene Poelsema; George Comsa

doi:10.1063/1.117222

Manipulation of growth modes in heteroepitaxy: Ni-Cu(111)

W.C.U. Wulfhekel, Ingo Beckmann, Nuphar N. Lipkin, G. Rosenfeld, Bene Poelsema, George Comsa

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Abstract

Growth manipulation methods, which have been successfully used to improve the growth of homoepitaxialfilms, are applied to molecular beam epitaxy of the heteroepitaxial system Ni/Cu(111). The procedures applied are temperature reduction during nucleation and pulsed ion bombardment during deposition. While the first does not lead to smoother films, the ion beam assisted growth is successful in reducing the film roughness.

Original language	English
Pages (from-to)	3492-3494
Number of pages	3
Journal	Applied physics letters
Volume	69
Issue number	23
DOIs	https://doi.org/10.1063/1.117222
Publication status	Published - 1996

Keywords

METIS-128936
IR-98124

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10.1063/1.117222

1.117222

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title = "Manipulation of growth modes in heteroepitaxy: Ni-Cu(111)",

abstract = "Growth manipulation methods, which have been successfully used to improve the growth of homoepitaxialfilms, are applied to molecular beam epitaxy of the heteroepitaxial system Ni/Cu(111). The procedures applied are temperature reduction during nucleation and pulsed ion bombardment during deposition. While the first does not lead to smoother films, the ion beam assisted growth is successful in reducing the film roughness.",

keywords = "METIS-128936, IR-98124",

author = "W.C.U. Wulfhekel and Ingo Beckmann and Lipkin, {Nuphar N.} and G. Rosenfeld and Bene Poelsema and George Comsa",

year = "1996",

doi = "10.1063/1.117222",

language = "English",

volume = "69",

pages = "3492--3494",

journal = "Applied physics letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

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T1 - Manipulation of growth modes in heteroepitaxy: Ni-Cu(111)

AU - Wulfhekel, W.C.U.

AU - Beckmann, Ingo

AU - Lipkin, Nuphar N.

AU - Rosenfeld, G.

AU - Poelsema, Bene

AU - Comsa, George

PY - 1996

Y1 - 1996

N2 - Growth manipulation methods, which have been successfully used to improve the growth of homoepitaxialfilms, are applied to molecular beam epitaxy of the heteroepitaxial system Ni/Cu(111). The procedures applied are temperature reduction during nucleation and pulsed ion bombardment during deposition. While the first does not lead to smoother films, the ion beam assisted growth is successful in reducing the film roughness.

AB - Growth manipulation methods, which have been successfully used to improve the growth of homoepitaxialfilms, are applied to molecular beam epitaxy of the heteroepitaxial system Ni/Cu(111). The procedures applied are temperature reduction during nucleation and pulsed ion bombardment during deposition. While the first does not lead to smoother films, the ion beam assisted growth is successful in reducing the film roughness.

KW - METIS-128936

KW - IR-98124

U2 - 10.1063/1.117222

DO - 10.1063/1.117222

M3 - Article

SN - 0003-6951

VL - 69

SP - 3492

EP - 3494

JO - Applied physics letters

JF - Applied physics letters

IS - 23

ER -

Manipulation of growth modes in heteroepitaxy: Ni-Cu(111)

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Keywords

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