Abstract
We introduce a massive parallel NEMS flow restriction nano-slit array fabricated in a wafer scale process using self-aligned 3D-nanolithography on sharp convex corners created by anisotropic etching of the silicon crystal. The device consists of an array of 50.000 slits, all having a length of ∼360 nm and a width of ∼6 nm. A relatively low resistance (short pore throat) configuration ensures high throughput on the order of 25μ g/s at 4 bar differential pressure. A dedicated hierarchical mechanical design consisting of on-membrane supports within a larger support structure enables operation pressures over 6 bar.
Original language | English |
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Title of host publication | 33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020 |
Place of Publication | Piscataway, NJ |
Publisher | IEEE |
Pages | 1106-1109 |
Number of pages | 4 |
ISBN (Electronic) | 978-1-7281-3581-6 |
ISBN (Print) | 978-1-7281-3582-3, 978-1-7281-3580-9 |
DOIs | |
Publication status | Published - Jan 2020 |
Event | 33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020 - Vancouver, Canada Duration: 18 Jan 2020 → 22 Jan 2020 Conference number: 33 |
Publication series
Name | Proceedings IEEE International Conference on Micro Electro Mechanical Systems (MEMS) |
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Publisher | IEEE |
Volume | 2020 |
ISSN (Print) | 1084-6999 |
ISSN (Electronic) | 2160-1968 |
Conference
Conference | 33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020 |
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Abbreviated title | MEMS 2020 |
Country/Territory | Canada |
City | Vancouver |
Period | 18/01/20 → 22/01/20 |
Keywords
- anisotropic etching
- arrays
- convex
- corner lithography
- displacement talbot lithography
- flow restriction
- molecular flow
- nano-slit
- nanogap
- NEMS
- silicon
- 22/2 OA procedure