Massive Parallel NEMS Flow Restriction Fabricated Using Self-Aligned 3D-Crystallographic Nanolithography

Chris P. Van Kampen, Erwin J. Berenschot, Gert Jan Burger, Roald M. Tiggelaar, Remco G. Sanders, Han G. Gardeniers, Niels R. Tas*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

We introduce a massive parallel NEMS flow restriction nano-slit array fabricated in a wafer scale process using self-aligned 3D-nanolithography on sharp convex corners created by anisotropic etching of the silicon crystal. The device consists of an array of 50.000 slits, all having a length of ∼360 nm and a width of ∼6 nm. A relatively low resistance (short pore throat) configuration ensures high throughput on the order of 25μ g/s at 4 bar differential pressure. A dedicated hierarchical mechanical design consisting of on-membrane supports within a larger support structure enables operation pressures over 6 bar.

Original languageEnglish
Title of host publication33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020
PublisherIEEE
Pages1106-1109
Number of pages4
ISBN (Electronic)9781728135809
DOIs
Publication statusPublished - Jan 2020
Event33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020 - Vancouver, Canada
Duration: 18 Jan 202022 Jan 2020
Conference number: 33

Publication series

NameProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Volume2020-January
ISSN (Print)1084-6999

Conference

Conference33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020
Abbreviated titleMEMS 2020
CountryCanada
CityVancouver
Period18/01/2022/01/20

Keywords

  • anisotropic etching
  • arrays
  • convex
  • corner lithography
  • displacement talbot lithography
  • flow restriction
  • molecular flow
  • nano-slit
  • nanogap
  • NEMS
  • silicon

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