Massive Parallel NEMS Flow Restriction Fabricated Using Self-Aligned 3D-Crystallographic Nanolithography

Chris P. Van Kampen; Erwin J. Berenschot; Gert Jan Burger; Roald M. Tiggelaar; Remco G. Sanders; Han G. Gardeniers; Niels R. Tas

doi:10.1109/MEMS46641.2020.9056175

Massive Parallel NEMS Flow Restriction Fabricated Using Self-Aligned 3D-Crystallographic Nanolithography

Chris P. Van Kampen
, Erwin J. Berenschot
, Gert Jan Burger
, Roald M. Tiggelaar
, Remco G. Sanders
, Han G. Gardeniers
, Niels R. Tas^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

114 Downloads (Pure)

Abstract

We introduce a massive parallel NEMS flow restriction nano-slit array fabricated in a wafer scale process using self-aligned 3D-nanolithography on sharp convex corners created by anisotropic etching of the silicon crystal. The device consists of an array of 50.000 slits, all having a length of ∼360 nm and a width of ∼6 nm. A relatively low resistance (short pore throat) configuration ensures high throughput on the order of 25μ g/s at 4 bar differential pressure. A dedicated hierarchical mechanical design consisting of on-membrane supports within a larger support structure enables operation pressures over 6 bar.

Original language	English
Title of host publication	33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	1106-1109
Number of pages	4
ISBN (Electronic)	978-1-7281-3581-6
ISBN (Print)	978-1-7281-3582-3, 978-1-7281-3580-9
DOIs	https://doi.org/10.1109/MEMS46641.2020.9056175
Publication status	Published - Jan 2020
Event	33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020 - Vancouver, Canada Duration: 18 Jan 2020 → 22 Jan 2020 Conference number: 33

Publication series

Name	Proceedings IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Publisher	IEEE
Volume	2020
ISSN (Print)	1084-6999
ISSN (Electronic)	2160-1968

Conference

Conference	33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020
Abbreviated title	MEMS 2020
Country/Territory	Canada
City	Vancouver
Period	18/01/20 → 22/01/20

Keywords

anisotropic etching
arrays
convex
corner lithography
displacement talbot lithography
flow restriction
molecular flow
nano-slit
nanogap
NEMS
silicon
22/2 OA procedure

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10.1109/MEMS46641.2020.9056175

Van-kampen-2020-Massive-parallel-nems-flow-restrictFinal published version, 2.71 MBLicence: Taverne

Cite this

Van Kampen, C. P., Berenschot, E. J., Burger, G. J., Tiggelaar, R. M., Sanders, R. G., Gardeniers, H. G., & Tas, N. R. (2020). Massive Parallel NEMS Flow Restriction Fabricated Using Self-Aligned 3D-Crystallographic Nanolithography. In 33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020 (pp. 1106-1109). Article 9056175 (Proceedings IEEE International Conference on Micro Electro Mechanical Systems (MEMS); Vol. 2020). IEEE. https://doi.org/10.1109/MEMS46641.2020.9056175

Van Kampen, Chris P. ; Berenschot, Erwin J. ; Burger, Gert Jan et al. / Massive Parallel NEMS Flow Restriction Fabricated Using Self-Aligned 3D-Crystallographic Nanolithography. 33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020. Piscataway, NJ : IEEE, 2020. pp. 1106-1109 (Proceedings IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

@inproceedings{25fb5b386c794c7884e6bcf742adb7f4,

title = "Massive Parallel NEMS Flow Restriction Fabricated Using Self-Aligned 3D-Crystallographic Nanolithography",

abstract = "We introduce a massive parallel NEMS flow restriction nano-slit array fabricated in a wafer scale process using self-aligned 3D-nanolithography on sharp convex corners created by anisotropic etching of the silicon crystal. The device consists of an array of 50.000 slits, all having a length of ∼360 nm and a width of ∼6 nm. A relatively low resistance (short pore throat) configuration ensures high throughput on the order of 25μ g/s at 4 bar differential pressure. A dedicated hierarchical mechanical design consisting of on-membrane supports within a larger support structure enables operation pressures over 6 bar.",

keywords = "anisotropic etching, arrays, convex, corner lithography, displacement talbot lithography, flow restriction, molecular flow, nano-slit, nanogap, NEMS, silicon, 22/2 OA procedure",

author = "\{Van Kampen\}, \{Chris P.\} and Berenschot, \{Erwin J.\} and Burger, \{Gert Jan\} and Tiggelaar, \{Roald M.\} and Sanders, \{Remco G.\} and Gardeniers, \{Han G.\} and Tas, \{Niels R.\}",

year = "2020",

month = jan,

doi = "10.1109/MEMS46641.2020.9056175",

language = "English",

isbn = "978-1-7281-3582-3",

series = "Proceedings IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",

publisher = "IEEE",

pages = "1106--1109",

booktitle = "33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020",

address = "United States",

note = "33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020, MEMS 2020 ; Conference date: 18-01-2020 Through 22-01-2020",

}

Van Kampen, CP, Berenschot, EJ, Burger, GJ, Tiggelaar, RM , Sanders, RG , Gardeniers, HG & Tas, NR 2020, Massive Parallel NEMS Flow Restriction Fabricated Using Self-Aligned 3D-Crystallographic Nanolithography. in 33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020., 9056175, Proceedings IEEE International Conference on Micro Electro Mechanical Systems (MEMS), vol. 2020, IEEE, Piscataway, NJ, pp. 1106-1109, 33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020, Vancouver, British Columbia, Canada, 18/01/20. https://doi.org/10.1109/MEMS46641.2020.9056175

Massive Parallel NEMS Flow Restriction Fabricated Using Self-Aligned 3D-Crystallographic Nanolithography. / Van Kampen, Chris P.; Berenschot, Erwin J.; Burger, Gert Jan et al.
33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020. Piscataway, NJ: IEEE, 2020. p. 1106-1109 9056175 (Proceedings IEEE International Conference on Micro Electro Mechanical Systems (MEMS); Vol. 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Van Kampen, Chris P.

AU - Berenschot, Erwin J.

AU - Burger, Gert Jan

AU - Tiggelaar, Roald M.

AU - Sanders, Remco G.

AU - Gardeniers, Han G.

AU - Tas, Niels R.

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N2 - We introduce a massive parallel NEMS flow restriction nano-slit array fabricated in a wafer scale process using self-aligned 3D-nanolithography on sharp convex corners created by anisotropic etching of the silicon crystal. The device consists of an array of 50.000 slits, all having a length of ∼360 nm and a width of ∼6 nm. A relatively low resistance (short pore throat) configuration ensures high throughput on the order of 25μ g/s at 4 bar differential pressure. A dedicated hierarchical mechanical design consisting of on-membrane supports within a larger support structure enables operation pressures over 6 bar.

AB - We introduce a massive parallel NEMS flow restriction nano-slit array fabricated in a wafer scale process using self-aligned 3D-nanolithography on sharp convex corners created by anisotropic etching of the silicon crystal. The device consists of an array of 50.000 slits, all having a length of ∼360 nm and a width of ∼6 nm. A relatively low resistance (short pore throat) configuration ensures high throughput on the order of 25μ g/s at 4 bar differential pressure. A dedicated hierarchical mechanical design consisting of on-membrane supports within a larger support structure enables operation pressures over 6 bar.

KW - anisotropic etching

KW - arrays

KW - convex

KW - corner lithography

KW - displacement talbot lithography

KW - flow restriction

KW - molecular flow

KW - nano-slit

KW - nanogap

KW - NEMS

KW - silicon

KW - 22/2 OA procedure

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M3 - Conference contribution

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SN - 978-1-7281-3580-9

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ER -

Van Kampen CP, Berenschot EJ, Burger GJ, Tiggelaar RM , Sanders RG , Gardeniers HG et al. Massive Parallel NEMS Flow Restriction Fabricated Using Self-Aligned 3D-Crystallographic Nanolithography. In 33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020. Piscataway, NJ: IEEE. 2020. p. 1106-1109. 9056175. (Proceedings IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). doi: 10.1109/MEMS46641.2020.9056175

Massive Parallel NEMS Flow Restriction Fabricated Using Self-Aligned 3D-Crystallographic Nanolithography

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