@inproceedings{f441737cee874121b50a1215e97e2cda,
title = "Material-inversion solid-phase epitaxy of p+ Si for elevated junctions",
abstract = "A solid-phase epitaxy (SPE) process that forms ultra-shallow abrupt aluminum p+-doped Si islands has been studied for deposition temperatures from 400 to 500 °C. The growth process gives a very uniform composition of the p+ layer and an abrupt doping transition to the Si substrate. Low ohmic contacting and near-ideal diode characteristics are reliably obtained. copyright The Electrochemical Society.",
author = "Y. Civale and L.K. Nanver and H. Schellevis",
year = "2006",
month = dec,
day = "1",
doi = "10.1149/1.2356268",
language = "English",
isbn = "1-56677-502-7",
series = "ECS transactions",
publisher = "The Electrochemical Society Inc.",
number = "2",
pages = "97--103",
editor = "F. Roozeboom and D.-L. Kwong and H. Iwai and M.C. {\"O}zt{\"u}rk and P.J. Timans and E. Gusev",
booktitle = "Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment",
address = "United States",
note = "210th Electrochemical Society Meeting, ECS 2006, ECS 2006 ; Conference date: 29-10-2006 Through 03-11-2006",
}