Material-inversion solid-phase epitaxy of p+ Si for elevated junctions

Y. Civale*, L.K. Nanver, H. Schellevis

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

A solid-phase epitaxy (SPE) process that forms ultra-shallow abrupt aluminum p+-doped Si islands has been studied for deposition temperatures from 400 to 500 °C. The growth process gives a very uniform composition of the p+ layer and an abrupt doping transition to the Si substrate. Low ohmic contacting and near-ideal diode characteristics are reliably obtained. copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment
EditorsF. Roozeboom, D.-L. Kwong, H. Iwai, M.C. Öztürk, P.J. Timans, E. Gusev
Place of PublicationPennington, N.J.
PublisherThe Electrochemical Society Inc.
Pages97-103
Number of pages7
ISBN (Print)1-56677-502-7
DOIs
Publication statusPublished - 1 Dec 2006
Externally publishedYes
Event210th Electrochemical Society Meeting, ECS 2006 - Cancún, Mexico
Duration: 29 Oct 20063 Nov 2006

Publication series

NameECS transactions
PublisherThe Electrochemical Society Inc.
Number2
Volume3
ISSN (Print)1938-5862

Conference

Conference210th Electrochemical Society Meeting, ECS 2006
Abbreviated titleECS 2006
CountryMexico
CityCancún
Period29/10/063/11/06

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