Material Reliability of Low-Temperature Boron Deposition for PureB Silicon Photodiode Fabrication

Lis Karen Nanver (Corresponding Author), Keith Lyon, Xingyu Liu, Joe Italiano, James Huffman

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    Abstract

    The chemical-vapor deposition conditions for the growth of pure boron (PureB) layers on silicon at temperatures as low as 400ºC were investigated with the purpose of optimizing photodiodes fabricated with PureB anodes for minimal B-layer thickness, low dark current and chemical robustness. The B-deposition is performed in a commercially-available Si epitaxial reactor from a diborane precursor. In-situ methods commonly used to improve the cleanliness of the Si surface before deposition are tested for a deposition temperature of 450ºC and PureB layer thickness of 3 nm. Specifically, high-temperature baking in hydrogen,
    and exposure to HCl are tested. Both material analysis and electrical diode characterization indicate that these extra cleaning steps degrade the properties of the PureB layer and the fabricated diodes.
    Original languageEnglish
    Pages (from-to)3397-3402
    Number of pages6
    JournalMRS Advances
    Volume3
    Issue number57-58
    DOIs
    Publication statusPublished - 26 Jun 2018
    EventMRS Spring Meeting 2018 - Phoenix, United States
    Duration: 2 Apr 20186 Apr 2018

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    Keywords

    • B
    • Si
    • Electrical properties
    • interface
    • chemical vapor deposition (CVD) (Chemical reaction)

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