Material Reliability of Low-Temperature Boron Deposition for PureB Silicon Photodiode Fabrication

Lis Karen Nanver (Corresponding Author), Keith Lyon, Xingyu Liu, Joe Italiano, James Huffman

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)
5 Downloads (Pure)

Abstract

The chemical-vapor deposition conditions for the growth of pure boron (PureB) layers on silicon at temperatures as low as 400ºC were investigated with the purpose of optimizing photodiodes fabricated with PureB anodes for minimal B-layer thickness, low dark current and chemical robustness. The B-deposition is performed in a commercially-available Si epitaxial reactor from a diborane precursor. In-situ methods commonly used to improve the cleanliness of the Si surface before deposition are tested for a deposition temperature of 450ºC and PureB layer thickness of 3 nm. Specifically, high-temperature baking in hydrogen,
and exposure to HCl are tested. Both material analysis and electrical diode characterization indicate that these extra cleaning steps degrade the properties of the PureB layer and the fabricated diodes.
Original languageEnglish
Pages (from-to)3397-3402
Number of pages6
JournalMRS Advances
Volume3
Issue number57-58
DOIs
Publication statusPublished - 26 Jun 2018
EventMRS Spring Meeting 2018 - Phoenix, United States
Duration: 2 Apr 20186 Apr 2018

Fingerprint

photodiodes
boron
fabrication
silicon
diodes
diborane
cleanliness
baking
dark current
cleaning
anodes
reactors
vapor deposition
temperature
hydrogen

Keywords

  • B
  • Si
  • Electrical properties
  • interface
  • chemical vapor deposition (CVD) (Chemical reaction)

Cite this

Nanver, Lis Karen ; Lyon, Keith ; Liu, Xingyu ; Italiano, Joe ; Huffman, James. / Material Reliability of Low-Temperature Boron Deposition for PureB Silicon Photodiode Fabrication. In: MRS Advances. 2018 ; Vol. 3, No. 57-58. pp. 3397-3402.
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abstract = "The chemical-vapor deposition conditions for the growth of pure boron (PureB) layers on silicon at temperatures as low as 400ºC were investigated with the purpose of optimizing photodiodes fabricated with PureB anodes for minimal B-layer thickness, low dark current and chemical robustness. The B-deposition is performed in a commercially-available Si epitaxial reactor from a diborane precursor. In-situ methods commonly used to improve the cleanliness of the Si surface before deposition are tested for a deposition temperature of 450ºC and PureB layer thickness of 3 nm. Specifically, high-temperature baking in hydrogen,and exposure to HCl are tested. Both material analysis and electrical diode characterization indicate that these extra cleaning steps degrade the properties of the PureB layer and the fabricated diodes.",
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Material Reliability of Low-Temperature Boron Deposition for PureB Silicon Photodiode Fabrication. / Nanver, Lis Karen (Corresponding Author); Lyon, Keith; Liu, Xingyu ; Italiano, Joe; Huffman, James.

In: MRS Advances, Vol. 3, No. 57-58, 26.06.2018, p. 3397-3402.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Material Reliability of Low-Temperature Boron Deposition for PureB Silicon Photodiode Fabrication

AU - Nanver, Lis Karen

AU - Lyon, Keith

AU - Liu, Xingyu

AU - Italiano, Joe

AU - Huffman, James

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AB - The chemical-vapor deposition conditions for the growth of pure boron (PureB) layers on silicon at temperatures as low as 400ºC were investigated with the purpose of optimizing photodiodes fabricated with PureB anodes for minimal B-layer thickness, low dark current and chemical robustness. The B-deposition is performed in a commercially-available Si epitaxial reactor from a diborane precursor. In-situ methods commonly used to improve the cleanliness of the Si surface before deposition are tested for a deposition temperature of 450ºC and PureB layer thickness of 3 nm. Specifically, high-temperature baking in hydrogen,and exposure to HCl are tested. Both material analysis and electrical diode characterization indicate that these extra cleaning steps degrade the properties of the PureB layer and the fabricated diodes.

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KW - Si

KW - Electrical properties

KW - interface

KW - chemical vapor deposition (CVD) (Chemical reaction)

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