Material Reliability of Low-Temperature Boron Deposition for PureB Silicon Photodiode Fabrication

Lis Karen Nanver; Keith Lyon; Xingyu  Liu; Joe Italiano; James Huffman

doi:10.1557/adv.2018.506

Material Reliability of Low-Temperature Boron Deposition for PureB Silicon Photodiode Fabrication

Lis Karen Nanver (Corresponding Author), Keith Lyon, Xingyu Liu, Joe Italiano, James Huffman

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

The chemical-vapor deposition conditions for the growth of pure boron (PureB) layers on silicon at temperatures as low as 400ºC were investigated with the purpose of optimizing photodiodes fabricated with PureB anodes for minimal B-layer thickness, low dark current and chemical robustness. The B-deposition is performed in a commercially-available Si epitaxial reactor from a diborane precursor. In-situ methods commonly used to improve the cleanliness of the Si surface before deposition are tested for a deposition temperature of 450ºC and PureB layer thickness of 3 nm. Specifically, high-temperature baking in hydrogen,
and exposure to HCl are tested. Both material analysis and electrical diode characterization indicate that these extra cleaning steps degrade the properties of the PureB layer and the fabricated diodes.

Original language	English
Pages (from-to)	3397-3402
Number of pages	6
Journal	MRS Advances
Volume	3
Issue number	57-58
DOIs	https://doi.org/10.1557/adv.2018.506
Publication status	Published - 26 Jun 2018
Event	MRS Spring Meeting 2018 - Phoenix, United States Duration: 2 Apr 2018 → 6 Apr 2018

Keywords

B
Si
Electrical properties
interface
chemical vapor deposition (CVD) (Chemical reaction)
n/a OA procedure

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title = "Material Reliability of Low-Temperature Boron Deposition for PureB Silicon Photodiode Fabrication",

abstract = "The chemical-vapor deposition conditions for the growth of pure boron (PureB) layers on silicon at temperatures as low as 400ºC were investigated with the purpose of optimizing photodiodes fabricated with PureB anodes for minimal B-layer thickness, low dark current and chemical robustness. The B-deposition is performed in a commercially-available Si epitaxial reactor from a diborane precursor. In-situ methods commonly used to improve the cleanliness of the Si surface before deposition are tested for a deposition temperature of 450ºC and PureB layer thickness of 3 nm. Specifically, high-temperature baking in hydrogen,and exposure to HCl are tested. Both material analysis and electrical diode characterization indicate that these extra cleaning steps degrade the properties of the PureB layer and the fabricated diodes.",

keywords = "B, Si, Electrical properties, interface, chemical vapor deposition (CVD) (Chemical reaction), n/a OA procedure",

author = "Nanver, {Lis Karen} and Keith Lyon and Xingyu Liu and Joe Italiano and James Huffman",

year = "2018",

month = jun,

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doi = "10.1557/adv.2018.506",

language = "English",

volume = "3",

pages = "3397--3402",

journal = "MRS Advances",

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publisher = "Cambridge University Press",

number = "57-58",

note = "MRS Spring Meeting 2018 ; Conference date: 02-04-2018 Through 06-04-2018",

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T1 - Material Reliability of Low-Temperature Boron Deposition for PureB Silicon Photodiode Fabrication

AU - Nanver, Lis Karen

AU - Lyon, Keith

AU - Liu, Xingyu

AU - Italiano, Joe

AU - Huffman, James

PY - 2018/6/26

Y1 - 2018/6/26

N2 - The chemical-vapor deposition conditions for the growth of pure boron (PureB) layers on silicon at temperatures as low as 400ºC were investigated with the purpose of optimizing photodiodes fabricated with PureB anodes for minimal B-layer thickness, low dark current and chemical robustness. The B-deposition is performed in a commercially-available Si epitaxial reactor from a diborane precursor. In-situ methods commonly used to improve the cleanliness of the Si surface before deposition are tested for a deposition temperature of 450ºC and PureB layer thickness of 3 nm. Specifically, high-temperature baking in hydrogen,and exposure to HCl are tested. Both material analysis and electrical diode characterization indicate that these extra cleaning steps degrade the properties of the PureB layer and the fabricated diodes.

AB - The chemical-vapor deposition conditions for the growth of pure boron (PureB) layers on silicon at temperatures as low as 400ºC were investigated with the purpose of optimizing photodiodes fabricated with PureB anodes for minimal B-layer thickness, low dark current and chemical robustness. The B-deposition is performed in a commercially-available Si epitaxial reactor from a diborane precursor. In-situ methods commonly used to improve the cleanliness of the Si surface before deposition are tested for a deposition temperature of 450ºC and PureB layer thickness of 3 nm. Specifically, high-temperature baking in hydrogen,and exposure to HCl are tested. Both material analysis and electrical diode characterization indicate that these extra cleaning steps degrade the properties of the PureB layer and the fabricated diodes.

KW - B

KW - Si

KW - Electrical properties

KW - interface

KW - chemical vapor deposition (CVD) (Chemical reaction)

KW - n/a OA procedure

U2 - 10.1557/adv.2018.506

DO - 10.1557/adv.2018.506

M3 - Article

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EP - 3402

JO - MRS Advances

JF - MRS Advances

SN - 2059-8521

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T2 - MRS Spring Meeting 2018

Y2 - 2 April 2018 through 6 April 2018

ER -

Material Reliability of Low-Temperature Boron Deposition for PureB Silicon Photodiode Fabrication

Abstract

Keywords

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