Materials and integration schemes for above-IC integrated optics

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    Abstract

    A study is presented on silicon oxynitride material for waveguides and germanium-silicon alloys for p-i-n diodes. The materials are manufactured at low, CMOS-backend compatible temperatures, targeting the integration of optical functions on top of CMOS chips. Low-temperature germanium-silicon deposition, crystallization and doping are studied for integrated photodetection up to ~1500 nm wavelength. An inductivelycoupled-plasma chemical vapor deposition process is presented for silicon oxynitride manufacturing at 150 °C wafer temperature, yielding low-loss material in a wide optical spectral range. Integration schemes for an optical plane on top of CMOS are discussed.
    Original languageUndefined
    Title of host publication15th International Conference on Ultimate Integration on Silicon, ULIS 2014
    Place of PublicationUSA
    PublisherIEEE
    Pages153-156
    Number of pages4
    ISBN (Print)978-1-4799-3718-9
    DOIs
    Publication statusPublished - 7 Apr 2014
    Event15th International Conference on Ultimate Integration on Silicon, ULIS 2014 - Stockholm, Sweden
    Duration: 7 Apr 20149 Apr 2014
    Conference number: 15th

    Publication series

    Name
    PublisherIEEE Circuits & Systems Society

    Conference

    Conference15th International Conference on Ultimate Integration on Silicon, ULIS 2014
    Abbreviated titleULIS 2014
    Country/TerritorySweden
    CityStockholm
    Period7/04/149/04/14

    Keywords

    • EWI-25024
    • METIS-306009
    • thermal budget
    • germanium-silicon
    • silicon-germanium
    • process integration
    • Integrated Optics
    • Integrated circuit fabrication
    • Micro-fabrication
    • MEMS
    • SiON
    • Waveguides
    • WDMA
    • PECVD
    • Photodetectors
    • Post processing
    • IR-91695
    • CMOS
    • Above IC
    • temperature budget

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