Materials and integration schemes for above-IC integrated optics

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

A study is presented on silicon oxynitride material for waveguides and germanium-silicon alloys for p-i-n diodes. The materials are manufactured at low, CMOS-backend compatible temperatures, targeting the integration of optical functions on top of CMOS chips. Low-temperature germanium-silicon deposition, crystallization and doping are studied for integrated photodetection up to ~1500 nm wavelength. An inductivelycoupled-plasma chemical vapor deposition process is presented for silicon oxynitride manufacturing at 150 °C wafer temperature, yielding low-loss material in a wide optical spectral range. Integration schemes for an optical plane on top of CMOS are discussed.
Original languageUndefined
Title of host publication15th International Conference on Ultimate Integration on Silicon, ULIS 2014
Place of PublicationUSA
PublisherIEEE Circuits & Systems Society
Pages153-156
Number of pages4
ISBN (Print)978-1-4799-3718-9
DOIs
Publication statusPublished - 7 Apr 2014
Event15th International Conference on Ultimate Integration on Silicon, ULIS 2014 - Stockholm, Sweden
Duration: 7 Apr 20149 Apr 2014
Conference number: 15th

Publication series

Name
PublisherIEEE Circuits & Systems Society

Conference

Conference15th International Conference on Ultimate Integration on Silicon, ULIS 2014
Abbreviated titleULIS 2014
CountrySweden
CityStockholm
Period7/04/149/04/14

Keywords

  • EWI-25024
  • METIS-306009
  • thermal budget
  • germanium-silicon
  • silicon-germanium
  • process integration
  • Integrated Optics
  • Integrated circuit fabrication
  • Micro-fabrication
  • MEMS
  • SiON
  • Waveguides
  • WDMA
  • PECVD
  • Photodetectors
  • Post processing
  • IR-91695
  • CMOS
  • Above IC
  • temperature budget

Cite this

Schmitz, J., Rangarajan, B., & Kovalgin, A. Y. (2014). Materials and integration schemes for above-IC integrated optics. In 15th International Conference on Ultimate Integration on Silicon, ULIS 2014 (pp. 153-156). USA: IEEE Circuits & Systems Society. https://doi.org/10.1109/ULIS.2014.6813921
Schmitz, Jurriaan ; Rangarajan, B. ; Kovalgin, Alexeij Y. / Materials and integration schemes for above-IC integrated optics. 15th International Conference on Ultimate Integration on Silicon, ULIS 2014. USA : IEEE Circuits & Systems Society, 2014. pp. 153-156
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abstract = "A study is presented on silicon oxynitride material for waveguides and germanium-silicon alloys for p-i-n diodes. The materials are manufactured at low, CMOS-backend compatible temperatures, targeting the integration of optical functions on top of CMOS chips. Low-temperature germanium-silicon deposition, crystallization and doping are studied for integrated photodetection up to ~1500 nm wavelength. An inductivelycoupled-plasma chemical vapor deposition process is presented for silicon oxynitride manufacturing at 150 °C wafer temperature, yielding low-loss material in a wide optical spectral range. Integration schemes for an optical plane on top of CMOS are discussed.",
keywords = "EWI-25024, METIS-306009, thermal budget, germanium-silicon, silicon-germanium, process integration, Integrated Optics, Integrated circuit fabrication, Micro-fabrication, MEMS, SiON, Waveguides, WDMA, PECVD, Photodetectors, Post processing, IR-91695, CMOS, Above IC, temperature budget",
author = "Jurriaan Schmitz and B. Rangarajan and Kovalgin, {Alexeij Y.}",
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isbn = "978-1-4799-3718-9",
publisher = "IEEE Circuits & Systems Society",
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booktitle = "15th International Conference on Ultimate Integration on Silicon, ULIS 2014",

}

Schmitz, J, Rangarajan, B & Kovalgin, AY 2014, Materials and integration schemes for above-IC integrated optics. in 15th International Conference on Ultimate Integration on Silicon, ULIS 2014. IEEE Circuits & Systems Society, USA, pp. 153-156, 15th International Conference on Ultimate Integration on Silicon, ULIS 2014, Stockholm, Sweden, 7/04/14. https://doi.org/10.1109/ULIS.2014.6813921

Materials and integration schemes for above-IC integrated optics. / Schmitz, Jurriaan; Rangarajan, B.; Kovalgin, Alexeij Y.

15th International Conference on Ultimate Integration on Silicon, ULIS 2014. USA : IEEE Circuits & Systems Society, 2014. p. 153-156.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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PY - 2014/4/7

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N2 - A study is presented on silicon oxynitride material for waveguides and germanium-silicon alloys for p-i-n diodes. The materials are manufactured at low, CMOS-backend compatible temperatures, targeting the integration of optical functions on top of CMOS chips. Low-temperature germanium-silicon deposition, crystallization and doping are studied for integrated photodetection up to ~1500 nm wavelength. An inductivelycoupled-plasma chemical vapor deposition process is presented for silicon oxynitride manufacturing at 150 °C wafer temperature, yielding low-loss material in a wide optical spectral range. Integration schemes for an optical plane on top of CMOS are discussed.

AB - A study is presented on silicon oxynitride material for waveguides and germanium-silicon alloys for p-i-n diodes. The materials are manufactured at low, CMOS-backend compatible temperatures, targeting the integration of optical functions on top of CMOS chips. Low-temperature germanium-silicon deposition, crystallization and doping are studied for integrated photodetection up to ~1500 nm wavelength. An inductivelycoupled-plasma chemical vapor deposition process is presented for silicon oxynitride manufacturing at 150 °C wafer temperature, yielding low-loss material in a wide optical spectral range. Integration schemes for an optical plane on top of CMOS are discussed.

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KW - MEMS

KW - SiON

KW - Waveguides

KW - WDMA

KW - PECVD

KW - Photodetectors

KW - Post processing

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KW - Above IC

KW - temperature budget

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Schmitz J, Rangarajan B, Kovalgin AY. Materials and integration schemes for above-IC integrated optics. In 15th International Conference on Ultimate Integration on Silicon, ULIS 2014. USA: IEEE Circuits & Systems Society. 2014. p. 153-156 https://doi.org/10.1109/ULIS.2014.6813921