Materials and integration schemes for above-IC integrated optics

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Abstract

    A study is presented on silicon oxynitride material for waveguides and germanium-silicon alloys for p-i-n diodes. The materials are manufactured at low, CMOS-backend compatible temperatures, targeting the integration of optical functions on top of CMOS chips. Low-temperature germanium-silicon deposition, crystallization and doping are studied for integrated photodetection up to ~1500 nm wavelength. An inductivelycoupled-plasma chemical vapor deposition process is presented for silicon oxynitride manufacturing at 150 °C wafer temperature, yielding low-loss material in a wide optical spectral range. Integration schemes for an optical plane on top of CMOS are discussed.
    Original languageUndefined
    Title of host publication15th International Conference on Ultimate Integration on Silicon, ULIS 2014
    Place of PublicationUSA
    PublisherIEEE Circuits & Systems Society
    Pages153-156
    Number of pages4
    ISBN (Print)978-1-4799-3718-9
    DOIs
    Publication statusPublished - 7 Apr 2014
    Event15th International Conference on Ultimate Integration on Silicon, ULIS 2014 - Stockholm, Sweden
    Duration: 7 Apr 20149 Apr 2014
    Conference number: 15th

    Publication series

    Name
    PublisherIEEE Circuits & Systems Society

    Conference

    Conference15th International Conference on Ultimate Integration on Silicon, ULIS 2014
    Abbreviated titleULIS 2014
    CountrySweden
    CityStockholm
    Period7/04/149/04/14

    Keywords

    • EWI-25024
    • METIS-306009
    • thermal budget
    • germanium-silicon
    • silicon-germanium
    • process integration
    • Integrated Optics
    • Integrated circuit fabrication
    • Micro-fabrication
    • MEMS
    • SiON
    • Waveguides
    • WDMA
    • PECVD
    • Photodetectors
    • Post processing
    • IR-91695
    • CMOS
    • Above IC
    • temperature budget

    Cite this

    Schmitz, J., Rangarajan, B., & Kovalgin, A. Y. (2014). Materials and integration schemes for above-IC integrated optics. In 15th International Conference on Ultimate Integration on Silicon, ULIS 2014 (pp. 153-156). USA: IEEE Circuits & Systems Society. https://doi.org/10.1109/ULIS.2014.6813921
    Schmitz, Jurriaan ; Rangarajan, B. ; Kovalgin, Alexeij Y. / Materials and integration schemes for above-IC integrated optics. 15th International Conference on Ultimate Integration on Silicon, ULIS 2014. USA : IEEE Circuits & Systems Society, 2014. pp. 153-156
    @inproceedings{5a615db47e7c4673aa15406676c28f8f,
    title = "Materials and integration schemes for above-IC integrated optics",
    abstract = "A study is presented on silicon oxynitride material for waveguides and germanium-silicon alloys for p-i-n diodes. The materials are manufactured at low, CMOS-backend compatible temperatures, targeting the integration of optical functions on top of CMOS chips. Low-temperature germanium-silicon deposition, crystallization and doping are studied for integrated photodetection up to ~1500 nm wavelength. An inductivelycoupled-plasma chemical vapor deposition process is presented for silicon oxynitride manufacturing at 150 °C wafer temperature, yielding low-loss material in a wide optical spectral range. Integration schemes for an optical plane on top of CMOS are discussed.",
    keywords = "EWI-25024, METIS-306009, thermal budget, germanium-silicon, silicon-germanium, process integration, Integrated Optics, Integrated circuit fabrication, Micro-fabrication, MEMS, SiON, Waveguides, WDMA, PECVD, Photodetectors, Post processing, IR-91695, CMOS, Above IC, temperature budget",
    author = "Jurriaan Schmitz and B. Rangarajan and Kovalgin, {Alexeij Y.}",
    note = "10.1109/ULIS.2014.6813921",
    year = "2014",
    month = "4",
    day = "7",
    doi = "10.1109/ULIS.2014.6813921",
    language = "Undefined",
    isbn = "978-1-4799-3718-9",
    publisher = "IEEE Circuits & Systems Society",
    pages = "153--156",
    booktitle = "15th International Conference on Ultimate Integration on Silicon, ULIS 2014",

    }

    Schmitz, J, Rangarajan, B & Kovalgin, AY 2014, Materials and integration schemes for above-IC integrated optics. in 15th International Conference on Ultimate Integration on Silicon, ULIS 2014. IEEE Circuits & Systems Society, USA, pp. 153-156, 15th International Conference on Ultimate Integration on Silicon, ULIS 2014, Stockholm, Sweden, 7/04/14. https://doi.org/10.1109/ULIS.2014.6813921

    Materials and integration schemes for above-IC integrated optics. / Schmitz, Jurriaan; Rangarajan, B.; Kovalgin, Alexeij Y.

    15th International Conference on Ultimate Integration on Silicon, ULIS 2014. USA : IEEE Circuits & Systems Society, 2014. p. 153-156.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    TY - GEN

    T1 - Materials and integration schemes for above-IC integrated optics

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    AU - Kovalgin, Alexeij Y.

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    PY - 2014/4/7

    Y1 - 2014/4/7

    N2 - A study is presented on silicon oxynitride material for waveguides and germanium-silicon alloys for p-i-n diodes. The materials are manufactured at low, CMOS-backend compatible temperatures, targeting the integration of optical functions on top of CMOS chips. Low-temperature germanium-silicon deposition, crystallization and doping are studied for integrated photodetection up to ~1500 nm wavelength. An inductivelycoupled-plasma chemical vapor deposition process is presented for silicon oxynitride manufacturing at 150 °C wafer temperature, yielding low-loss material in a wide optical spectral range. Integration schemes for an optical plane on top of CMOS are discussed.

    AB - A study is presented on silicon oxynitride material for waveguides and germanium-silicon alloys for p-i-n diodes. The materials are manufactured at low, CMOS-backend compatible temperatures, targeting the integration of optical functions on top of CMOS chips. Low-temperature germanium-silicon deposition, crystallization and doping are studied for integrated photodetection up to ~1500 nm wavelength. An inductivelycoupled-plasma chemical vapor deposition process is presented for silicon oxynitride manufacturing at 150 °C wafer temperature, yielding low-loss material in a wide optical spectral range. Integration schemes for an optical plane on top of CMOS are discussed.

    KW - EWI-25024

    KW - METIS-306009

    KW - thermal budget

    KW - germanium-silicon

    KW - silicon-germanium

    KW - process integration

    KW - Integrated Optics

    KW - Integrated circuit fabrication

    KW - Micro-fabrication

    KW - MEMS

    KW - SiON

    KW - Waveguides

    KW - WDMA

    KW - PECVD

    KW - Photodetectors

    KW - Post processing

    KW - IR-91695

    KW - CMOS

    KW - Above IC

    KW - temperature budget

    U2 - 10.1109/ULIS.2014.6813921

    DO - 10.1109/ULIS.2014.6813921

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    BT - 15th International Conference on Ultimate Integration on Silicon, ULIS 2014

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    Schmitz J, Rangarajan B, Kovalgin AY. Materials and integration schemes for above-IC integrated optics. In 15th International Conference on Ultimate Integration on Silicon, ULIS 2014. USA: IEEE Circuits & Systems Society. 2014. p. 153-156 https://doi.org/10.1109/ULIS.2014.6813921