Materials and integration schemes for above-IC integrated optics

Jurriaan Schmitz; B. Rangarajan; Alexeij Y. Kovalgin

doi:10.1109/ULIS.2014.6813921

Materials and integration schemes for above-IC integrated optics

Jurriaan Schmitz, B. Rangarajan, Alexeij Y. Kovalgin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

A study is presented on silicon oxynitride material for waveguides and germanium-silicon alloys for p-i-n diodes. The materials are manufactured at low, CMOS-backend compatible temperatures, targeting the integration of optical functions on top of CMOS chips. Low-temperature germanium-silicon deposition, crystallization and doping are studied for integrated photodetection up to ~1500 nm wavelength. An inductivelycoupled-plasma chemical vapor deposition process is presented for silicon oxynitride manufacturing at 150 °C wafer temperature, yielding low-loss material in a wide optical spectral range. Integration schemes for an optical plane on top of CMOS are discussed.

Original language	Undefined
Title of host publication	15th International Conference on Ultimate Integration on Silicon, ULIS 2014
Place of Publication	USA
Publisher	IEEE
Pages	153-156
Number of pages	4
ISBN (Print)	978-1-4799-3718-9
DOIs	https://doi.org/10.1109/ULIS.2014.6813921
Publication status	Published - 7 Apr 2014
Event	15th International Conference on Ultimate Integration on Silicon, ULIS 2014 - Stockholm, Sweden Duration: 7 Apr 2014 → 9 Apr 2014 Conference number: 15th

Publication series

Name
Publisher	IEEE Circuits & Systems Society

Conference

Conference	15th International Conference on Ultimate Integration on Silicon, ULIS 2014
Abbreviated title	ULIS 2014
Country/Territory	Sweden
City	Stockholm
Period	7/04/14 → 9/04/14

Keywords

EWI-25024
METIS-306009
thermal budget
germanium-silicon
silicon-germanium
process integration
Integrated Optics
Integrated circuit fabrication
Micro-fabrication
MEMS
SiON
Waveguides
WDMA
PECVD
Photodetectors
Post processing
IR-91695
CMOS
Above IC
temperature budget

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/ULIS.2014.6813921

http://eprints.eemcs.utwente.nl/secure2/25024/01/schmitz_ULIS.pdf

Cite this

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title = "Materials and integration schemes for above-IC integrated optics",

abstract = "A study is presented on silicon oxynitride material for waveguides and germanium-silicon alloys for p-i-n diodes. The materials are manufactured at low, CMOS-backend compatible temperatures, targeting the integration of optical functions on top of CMOS chips. Low-temperature germanium-silicon deposition, crystallization and doping are studied for integrated photodetection up to ~1500 nm wavelength. An inductivelycoupled-plasma chemical vapor deposition process is presented for silicon oxynitride manufacturing at 150 °C wafer temperature, yielding low-loss material in a wide optical spectral range. Integration schemes for an optical plane on top of CMOS are discussed.",

keywords = "EWI-25024, METIS-306009, thermal budget, germanium-silicon, silicon-germanium, process integration, Integrated Optics, Integrated circuit fabrication, Micro-fabrication, MEMS, SiON, Waveguides, WDMA, PECVD, Photodetectors, Post processing, IR-91695, CMOS, Above IC, temperature budget",

author = "Jurriaan Schmitz and B. Rangarajan and Kovalgin, {Alexeij Y.}",

note = "10.1109/ULIS.2014.6813921 ; 15th International Conference on Ultimate Integration on Silicon, ULIS 2014 ; Conference date: 07-04-2014 Through 09-04-2014",

year = "2014",

month = apr,

day = "7",

doi = "10.1109/ULIS.2014.6813921",

language = "Undefined",

isbn = "978-1-4799-3718-9",

publisher = "IEEE",

pages = "153--156",

booktitle = "15th International Conference on Ultimate Integration on Silicon, ULIS 2014",

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TY - GEN

T1 - Materials and integration schemes for above-IC integrated optics

AU - Schmitz, Jurriaan

AU - Rangarajan, B.

AU - Kovalgin, Alexeij Y.

N1 - Conference code: 15th

PY - 2014/4/7

Y1 - 2014/4/7

N2 - A study is presented on silicon oxynitride material for waveguides and germanium-silicon alloys for p-i-n diodes. The materials are manufactured at low, CMOS-backend compatible temperatures, targeting the integration of optical functions on top of CMOS chips. Low-temperature germanium-silicon deposition, crystallization and doping are studied for integrated photodetection up to ~1500 nm wavelength. An inductivelycoupled-plasma chemical vapor deposition process is presented for silicon oxynitride manufacturing at 150 °C wafer temperature, yielding low-loss material in a wide optical spectral range. Integration schemes for an optical plane on top of CMOS are discussed.

AB - A study is presented on silicon oxynitride material for waveguides and germanium-silicon alloys for p-i-n diodes. The materials are manufactured at low, CMOS-backend compatible temperatures, targeting the integration of optical functions on top of CMOS chips. Low-temperature germanium-silicon deposition, crystallization and doping are studied for integrated photodetection up to ~1500 nm wavelength. An inductivelycoupled-plasma chemical vapor deposition process is presented for silicon oxynitride manufacturing at 150 °C wafer temperature, yielding low-loss material in a wide optical spectral range. Integration schemes for an optical plane on top of CMOS are discussed.

KW - EWI-25024

KW - METIS-306009

KW - thermal budget

KW - germanium-silicon

KW - silicon-germanium

KW - process integration

KW - Integrated Optics

KW - Integrated circuit fabrication

KW - Micro-fabrication

KW - MEMS

KW - SiON

KW - Waveguides

KW - WDMA

KW - PECVD

KW - Photodetectors

KW - Post processing

KW - IR-91695

KW - CMOS

KW - Above IC

KW - temperature budget

U2 - 10.1109/ULIS.2014.6813921

DO - 10.1109/ULIS.2014.6813921

M3 - Conference contribution

SN - 978-1-4799-3718-9

SP - 153

EP - 156

BT - 15th International Conference on Ultimate Integration on Silicon, ULIS 2014

PB - IEEE

CY - USA

T2 - 15th International Conference on Ultimate Integration on Silicon, ULIS 2014

Y2 - 7 April 2014 through 9 April 2014

ER -