Materials Characterization of CIGS solar cells on Top of CMOS chips

J. Lu, W. Liu, A.Y. Kovalgin, Y. Sun, J. Schmitz

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    Abstract

    In the current work, we present a detailed study on the material properties of the CIGS layers, fabricated on top of the CMOS chips, and compare the results with the fabrication on standard glass substrates. Almost identical elemental composition on both glass and CMOS chips (within measurement error). From X-ray diffraction measurement, except two peaks from the Si <100> substrate, the diffraction peaks from CIGS solar cell CMOS chip and that on glass substrate coincide for all three temperatures. Helium ion microscope images of the cross-section and top view of the CIGS layers, shows that the grain size is suitable for high efficiency solar cells.
    Original languageEnglish
    Title of host publicationProceedings of 2011 MRS Spring Meeting
    EditorsR. Venkatasubramanian, H. Radousky, H. Liang
    Place of PublicationCambridge, UK
    PublisherCambridge University Press
    Pagese06-23
    Number of pages8
    DOIs
    Publication statusPublished - 1 Jun 2011
    EventMRS Spring Meeting 2011: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - San Francisco, United States
    Duration: 25 Apr 201129 Apr 2011

    Publication series

    NameMRS proceedings
    PublisherCambridge University Press
    Volume1325

    Conference

    ConferenceMRS Spring Meeting 2011
    CountryUnited States
    CitySan Francisco
    Period25/04/1129/04/11

    Keywords

    • IR-79892
    • EWI-21622
    • METIS-285166

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  • Cite this

    Lu, J., Liu, W., Kovalgin, A. Y., Sun, Y., & Schmitz, J. (2011). Materials Characterization of CIGS solar cells on Top of CMOS chips. In R. Venkatasubramanian, H. Radousky, & H. Liang (Eds.), Proceedings of 2011 MRS Spring Meeting (pp. e06-23). (MRS proceedings; Vol. 1325). Cambridge, UK: Cambridge University Press. https://doi.org/10.1557/opl.2011.1161