Measurement of MOSFET LF Noise Under Large Signal RF Excitation

A.P. van der Wel; Eric A.M. Klumperink; Bram Nauta

Measurement of MOSFET LF Noise Under Large Signal RF Excitation

A.P. van der Wel, Eric A.M. Klumperink, Bram Nauta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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139 Downloads (Pure)

Abstract

A new measurement technique is presented that allows measurement of MOSFET LF noise under large signal RF excitation. Measurements indicate that MOSFETS exhibit a reduction in LF noise when they are cycled from inversion to accummulation and that this reduction does not depend on the frequency of excitation for excitation frequencies of up to 3 GHz. The measurement results are significant because MOSFET LF noise is important in the design of RF CMOS circuits such as oscillators and mixers, where large signal swings occur. Additionally, the measurement results give new insights into the LF noise generating mechanisms in MOSFETs.

Original language	Undefined
Title of host publication	the 32nd European Solid-State Device Research Conference, 2002 (ESSDERC 2002)
Place of Publication	Firenze, Italy
Publisher	IEEE
Pages	91-94
Number of pages	4
ISBN (Print)	8890084782
Publication status	Published - Sept 2002
Event	32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italy Duration: 24 Sept 2002 → 26 Sept 2002 Conference number: 32

Publication series

Name
Publisher	IEEE

Conference

Conference	32nd European Solid-State Device Research Conference, ESSDERC 2002
Abbreviated title	ESSDERC
Country/Territory	Italy
City	Firenze
Period	24/09/02 → 26/09/02

Keywords

METIS-206030
IR-43167
EWI-14407

Access to Document

Cite this

@inproceedings{c4b3f4b57bdd436fb3c1ea2038c098a2,

title = "Measurement of MOSFET LF Noise Under Large Signal RF Excitation",

abstract = "A new measurement technique is presented that allows measurement of MOSFET LF noise under large signal RF excitation. Measurements indicate that MOSFETS exhibit a reduction in LF noise when they are cycled from inversion to accummulation and that this reduction does not depend on the frequency of excitation for excitation frequencies of up to 3 GHz. The measurement results are significant because MOSFET LF noise is important in the design of RF CMOS circuits such as oscillators and mixers, where large signal swings occur. Additionally, the measurement results give new insights into the LF noise generating mechanisms in MOSFETs.",

keywords = "METIS-206030, IR-43167, EWI-14407",

author = "{van der Wel}, A.P. and Klumperink, {Eric A.M.} and Bram Nauta",

year = "2002",

month = sep,

language = "Undefined",

isbn = "8890084782",

publisher = "IEEE",

pages = "91--94",

booktitle = "the 32nd European Solid-State Device Research Conference, 2002 (ESSDERC 2002)",

address = "United States",

note = "32nd European Solid-State Device Research Conference, ESSDERC 2002 ; Conference date: 24-09-2002 Through 26-09-2002",

}

TY - GEN

T1 - Measurement of MOSFET LF Noise Under Large Signal RF Excitation

AU - van der Wel, A.P.

AU - Klumperink, Eric A.M.

AU - Nauta, Bram

N1 - Conference code: 32

PY - 2002/9

Y1 - 2002/9

N2 - A new measurement technique is presented that allows measurement of MOSFET LF noise under large signal RF excitation. Measurements indicate that MOSFETS exhibit a reduction in LF noise when they are cycled from inversion to accummulation and that this reduction does not depend on the frequency of excitation for excitation frequencies of up to 3 GHz. The measurement results are significant because MOSFET LF noise is important in the design of RF CMOS circuits such as oscillators and mixers, where large signal swings occur. Additionally, the measurement results give new insights into the LF noise generating mechanisms in MOSFETs.

AB - A new measurement technique is presented that allows measurement of MOSFET LF noise under large signal RF excitation. Measurements indicate that MOSFETS exhibit a reduction in LF noise when they are cycled from inversion to accummulation and that this reduction does not depend on the frequency of excitation for excitation frequencies of up to 3 GHz. The measurement results are significant because MOSFET LF noise is important in the design of RF CMOS circuits such as oscillators and mixers, where large signal swings occur. Additionally, the measurement results give new insights into the LF noise generating mechanisms in MOSFETs.

KW - METIS-206030

KW - IR-43167

KW - EWI-14407

M3 - Conference contribution

SN - 8890084782

SP - 91

EP - 94

BT - the 32nd European Solid-State Device Research Conference, 2002 (ESSDERC 2002)

PB - IEEE

CY - Firenze, Italy

T2 - 32nd European Solid-State Device Research Conference, ESSDERC 2002

Y2 - 24 September 2002 through 26 September 2002

ER -