Abstract
A new measurement technique is presented that allows
measurement of MOSFET LF noise under large signal RF
excitation. Measurements indicate that MOSFETS exhibit
a reduction in LF noise when they are cycled from inversion
to accummulation and that this reduction does not
depend on the frequency of excitation for excitation frequencies
of up to 3 GHz.
The measurement results are significant because MOSFET
LF noise is important in the design of RF CMOS circuits
such as oscillators and mixers, where large signal
swings occur. Additionally, the measurement results give
new insights into the LF noise generating mechanisms in
MOSFETs.
Original language | Undefined |
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Title of host publication | the 32nd European Solid-State Device Research Conference, 2002 (ESSDERC 2002) |
Place of Publication | Firenze, Italy |
Publisher | IEEE |
Pages | 91-94 |
Number of pages | 4 |
ISBN (Print) | 8890084782 |
Publication status | Published - Sept 2002 |
Event | 32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italy Duration: 24 Sept 2002 → 26 Sept 2002 Conference number: 32 |
Publication series
Name | |
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Publisher | IEEE |
Conference
Conference | 32nd European Solid-State Device Research Conference, ESSDERC 2002 |
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Abbreviated title | ESSDERC |
Country/Territory | Italy |
City | Firenze |
Period | 24/09/02 → 26/09/02 |
Keywords
- METIS-206030
- IR-43167
- EWI-14407