Measurement of MOSFET LF Noise Under Large Signal RF Excitation

A.P. van der Wel, Eric A.M. Klumperink, Bram Nauta

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    A new measurement technique is presented that allows measurement of MOSFET LF noise under large signal RF excitation. Measurements indicate that MOSFETS exhibit a reduction in LF noise when they are cycled from inversion to accummulation and that this reduction does not depend on the frequency of excitation for excitation frequencies of up to 3 GHz. The measurement results are significant because MOSFET LF noise is important in the design of RF CMOS circuits such as oscillators and mixers, where large signal swings occur. Additionally, the measurement results give new insights into the LF noise generating mechanisms in MOSFETs.
    Original languageUndefined
    Title of host publicationthe 32nd European Solid-State Device Research Conference, 2002 (ESSDERC 2002)
    Place of PublicationFirenze, Italy
    Number of pages4
    ISBN (Print)8890084782
    Publication statusPublished - Sept 2002
    Event32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italy
    Duration: 24 Sept 200226 Sept 2002
    Conference number: 32

    Publication series



    Conference32nd European Solid-State Device Research Conference, ESSDERC 2002
    Abbreviated titleESSDERC


    • METIS-206030
    • IR-43167
    • EWI-14407

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