A new measurement technique is presented that allows measurement of MOSFET LF noise under large signal RF excitation. Measurements indicate that MOSFETS exhibit a reduction in LF noise when they are cycled from inversion to accummulation and that this reduction does not depend on the frequency of excitation for excitation frequencies of up to 3 GHz. The measurement results are significant because MOSFET LF noise is important in the design of RF CMOS circuits such as oscillators and mixers, where large signal swings occur. Additionally, the measurement results give new insights into the LF noise generating mechanisms in MOSFETs.
|Title of host publication||the 32nd European Solid-State Device Research Conference, 2002 (ESSDERC 2002)|
|Place of Publication||Firenze, Italy|
|Number of pages||4|
|Publication status||Published - Sep 2002|
|Event||32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italy|
Duration: 24 Sep 2002 → 26 Sep 2002
Conference number: 32
|Conference||32nd European Solid-State Device Research Conference, ESSDERC 2002|
|Period||24/09/02 → 26/09/02|
van der Wel, A. P., Klumperink, E. A. M., & Nauta, B. (2002). Measurement of MOSFET LF Noise Under Large Signal RF Excitation. In the 32nd European Solid-State Device Research Conference, 2002 (ESSDERC 2002) (pp. 91-94). Firenze, Italy: IEEE.