Spin accumulation is generated by injecting an unpolarized charge current into a channel of GaAs two-dimensional electron gas subject to an in-plane magnetic field, then measured in a nonlocal geometry. Unlike previous measurements that have used spin-polarized nanostructures, here the spin accumulation arises simply from the difference in bulk conductivities for spin-up and spin-down carriers. Comparison to a diffusive model that includes spin subband splitting in magnetic field suggests a significantly enhanced electron spin susceptibility in the two-dimensional electron gas.
|Journal||Physical Review B (Condensed Matter and Materials Physics)|
|Publication status||Published - 15 Jul 2010|