Abstract
Spin accumulation is generated by injecting an unpolarized charge current into a channel of GaAs two-dimensional electron gas subject to an in-plane magnetic field, then measured in a nonlocal geometry. Unlike previous measurements that have used spin-polarized nanostructures, here the spin accumulation arises simply from the difference in bulk conductivities for spin-up and spin-down carriers. Comparison to a diffusive model that includes spin subband splitting in magnetic field suggests a significantly enhanced electron spin susceptibility in the two-dimensional electron gas.
Original language | English |
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Article number | 041305(R) |
Journal | Physical Review B (Condensed Matter and Materials Physics) |
Volume | 82 |
Issue number | 4 |
DOIs | |
Publication status | Published - 15 Jul 2010 |
Externally published | Yes |