Abstract
Spin accumulation is generated by injecting an unpolarized charge current into a channel of GaAs two-dimensional electron gas subject to an in-plane magnetic field, then measured in a nonlocal geometry. Unlike previous measurements that have used spin-polarized nanostructures, here the spin accumulation arises simply from the difference in bulk conductivities for spin-up and spin-down carriers. Comparison to a diffusive model that includes spin subband splitting in magnetic field suggests a significantly enhanced electron spin susceptibility in the two-dimensional electron gas.
| Original language | English |
|---|---|
| Article number | 041305(R) |
| Journal | Physical Review B (Condensed Matter and Materials Physics) |
| Volume | 82 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 15 Jul 2010 |
| Externally published | Yes |