Measurement of the Low Frequency Noise of MOSFETs under Large Signal RF Excitation

A measurement technique [1] is presented that allows measurement of MOSFET low frequency (LF) noise under large signal RF (Radio Frequency) excitation. Measurements indicate that MOSFETS exhibit a reduction in LF noise when they are cycled from inversion to accummulation and that this reduction does not depend on the frequency of excitation for excitation frequencies of up to 3 GHz. The measurement results are significant because MOSFET LF noise is important in the design of RF CMOS circuits such as oscillators and mixers, where large signal swings occur. Additionally, the measurement results give new insights into the LF noise generating mechanisms in MOSFETs.