Abstract
We present CMOS post-processing compatible resonator structures for passive band-pass filtering in the MHz-few GHz range. This article discusses the considerations leading to the choice of materials and process sequence, practical aspects in the fabrication, and resonator performance. Using in-situ boron-doped polycrystalline germanium-silicon as resonator and electrode material, high quality factors over 200,000 are obtained at relatively low motional impedance.
| Original language | English |
|---|---|
| Title of host publication | ULIS 2013 |
| Subtitle of host publication | The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day' |
| Pages | 193-196 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 23 Jul 2013 |
| Event | 14th International Conference on Ultimate Integration on Silicon, ULIS 2013 - Coventry, United Kingdom Duration: 19 Mar 2013 → 21 Mar 2013 Conference number: 14 |
Publication series
| Name | ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day' |
|---|
Conference
| Conference | 14th International Conference on Ultimate Integration on Silicon, ULIS 2013 |
|---|---|
| Abbreviated title | ULIS 2013 |
| Country | United Kingdom |
| City | Coventry |
| Period | 19/03/13 → 21/03/13 |
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Keywords
- above-IC
- CMOS
- filter
- germanium
- GeSi
- Lamé mode
- MEMS
- microtechnology
- resonator
- SiGe
- silicon
- software defined radio
Cite this
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Mechanical resonators on CMOS for integrated passive band pass filters. / Kazmi, S. N.R.; Salm, C.; Schmitz, J.
ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'. 2013. p. 193-196 6523517 (ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day').Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
TY - GEN
T1 - Mechanical resonators on CMOS for integrated passive band pass filters
AU - Kazmi, S. N.R.
AU - Salm, C.
AU - Schmitz, J.
PY - 2013/7/23
Y1 - 2013/7/23
N2 - We present CMOS post-processing compatible resonator structures for passive band-pass filtering in the MHz-few GHz range. This article discusses the considerations leading to the choice of materials and process sequence, practical aspects in the fabrication, and resonator performance. Using in-situ boron-doped polycrystalline germanium-silicon as resonator and electrode material, high quality factors over 200,000 are obtained at relatively low motional impedance.
AB - We present CMOS post-processing compatible resonator structures for passive band-pass filtering in the MHz-few GHz range. This article discusses the considerations leading to the choice of materials and process sequence, practical aspects in the fabrication, and resonator performance. Using in-situ boron-doped polycrystalline germanium-silicon as resonator and electrode material, high quality factors over 200,000 are obtained at relatively low motional impedance.
KW - above-IC
KW - CMOS
KW - filter
KW - germanium
KW - GeSi
KW - Lamé mode
KW - MEMS
KW - microtechnology
KW - resonator
KW - SiGe
KW - silicon
KW - software defined radio
UR - http://www.scopus.com/inward/record.url?scp=84880320750&partnerID=8YFLogxK
U2 - 10.1109/ULIS.2013.6523517
DO - 10.1109/ULIS.2013.6523517
M3 - Conference contribution
SN - 9781467348003
T3 - ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'
SP - 193
EP - 196
BT - ULIS 2013
ER -