Mechanical resonators on CMOS for integrated passive band pass filters

S. N.R. Kazmi; C. Salm; J. Schmitz

doi:10.1109/ULIS.2013.6523517

Mechanical resonators on CMOS for integrated passive band pass filters

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

We present CMOS post-processing compatible resonator structures for passive band-pass filtering in the MHz-few GHz range. This article discusses the considerations leading to the choice of materials and process sequence, practical aspects in the fabrication, and resonator performance. Using in-situ boron-doped polycrystalline germanium-silicon as resonator and electrode material, high quality factors over 200,000 are obtained at relatively low motional impedance.

Original language	English
Title of host publication	ULIS 2013
Subtitle of host publication	The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'
Pages	193-196
Number of pages	4
DOIs	https://doi.org/10.1109/ULIS.2013.6523517
Publication status	Published - 23 Jul 2013
Event	14th International Conference on Ultimate Integration on Silicon, ULIS 2013 - Coventry, United Kingdom Duration: 19 Mar 2013 → 21 Mar 2013 Conference number: 14

Publication series

Name	ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'

Conference

Conference	14th International Conference on Ultimate Integration on Silicon, ULIS 2013
Abbreviated title	ULIS 2013
Country/Territory	United Kingdom
City	Coventry
Period	19/03/13 → 21/03/13

Keywords

above-IC
CMOS
filter
germanium
GeSi
Lamé mode
MEMS
microtechnology
resonator
SiGe
silicon
software defined radio

Access to Document

10.1109/ULIS.2013.6523517

Cite this

Kazmi, S. N. R., Salm, C., & Schmitz, J. (2013). Mechanical resonators on CMOS for integrated passive band pass filters. In ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day' (pp. 193-196). [6523517] (ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'). https://doi.org/10.1109/ULIS.2013.6523517

Kazmi, S. N.R. ; Salm, C. ; Schmitz, J. / Mechanical resonators on CMOS for integrated passive band pass filters. ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'. 2013. pp. 193-196 (ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day').

@inproceedings{449259ac27424d89819e1e7099d12969,

title = "Mechanical resonators on CMOS for integrated passive band pass filters",

abstract = "We present CMOS post-processing compatible resonator structures for passive band-pass filtering in the MHz-few GHz range. This article discusses the considerations leading to the choice of materials and process sequence, practical aspects in the fabrication, and resonator performance. Using in-situ boron-doped polycrystalline germanium-silicon as resonator and electrode material, high quality factors over 200,000 are obtained at relatively low motional impedance.",

keywords = "above-IC, CMOS, filter, germanium, GeSi, Lam{\'e} mode, MEMS, microtechnology, resonator, SiGe, silicon, software defined radio",

author = "Kazmi, {S. N.R.} and C. Salm and J. Schmitz",

year = "2013",

month = jul,

day = "23",

doi = "10.1109/ULIS.2013.6523517",

language = "English",

isbn = "9781467348003",

series = "ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'",

pages = "193--196",

booktitle = "ULIS 2013",

note = "14th International Conference on Ultimate Integration on Silicon, ULIS 2013, ULIS 2013 ; Conference date: 19-03-2013 Through 21-03-2013",

}

Kazmi, SNR, Salm, C & Schmitz, J 2013, Mechanical resonators on CMOS for integrated passive band pass filters. in ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'., 6523517, ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day', pp. 193-196, 14th International Conference on Ultimate Integration on Silicon, ULIS 2013, Coventry, United Kingdom, 19/03/13. https://doi.org/10.1109/ULIS.2013.6523517

Mechanical resonators on CMOS for integrated passive band pass filters. / Kazmi, S. N.R.; Salm, C.; Schmitz, J.

ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'. 2013. p. 193-196 6523517 (ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day').

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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N2 - We present CMOS post-processing compatible resonator structures for passive band-pass filtering in the MHz-few GHz range. This article discusses the considerations leading to the choice of materials and process sequence, practical aspects in the fabrication, and resonator performance. Using in-situ boron-doped polycrystalline germanium-silicon as resonator and electrode material, high quality factors over 200,000 are obtained at relatively low motional impedance.

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KW - CMOS

KW - filter

KW - germanium

KW - GeSi

KW - Lamé mode

KW - MEMS

KW - microtechnology

KW - resonator

KW - SiGe

KW - silicon

KW - software defined radio

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Kazmi SNR, Salm C , Schmitz J. Mechanical resonators on CMOS for integrated passive band pass filters. In ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'. 2013. p. 193-196. 6523517. (ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'). doi: 10.1109/ULIS.2013.6523517

Mechanical resonators on CMOS for integrated passive band pass filters

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