Abstract
We present CMOS post-processing compatible resonator structures for passive band-pass filtering in the MHz-few GHz range. This article discusses the considerations leading to the choice of materials and process sequence, practical aspects in the fabrication, and resonator performance. Using in-situ boron-doped polycrystalline germanium-silicon as resonator and electrode material, high quality factors over 200,000 are obtained at relatively low motional impedance.
Original language | English |
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Title of host publication | ULIS 2013 |
Subtitle of host publication | The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day' |
Pages | 193-196 |
Number of pages | 4 |
DOIs | |
Publication status | Published - 23 Jul 2013 |
Event | 14th International Conference on Ultimate Integration on Silicon, ULIS 2013 - Coventry, United Kingdom Duration: 19 Mar 2013 → 21 Mar 2013 Conference number: 14 |
Publication series
Name | ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day' |
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Conference
Conference | 14th International Conference on Ultimate Integration on Silicon, ULIS 2013 |
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Abbreviated title | ULIS 2013 |
Country/Territory | United Kingdom |
City | Coventry |
Period | 19/03/13 → 21/03/13 |
Keywords
- above-IC
- CMOS
- filter
- germanium
- GeSi
- Lamé mode
- MEMS
- microtechnology
- resonator
- SiGe
- silicon
- software defined radio