Mechanism of Enhancement in Electromagnetic Properties of MgB2 by Nano SiC Doping

S.X. Dou; O. Shcherbakova; W.K. Yeoh; J.H. Kim; S. Soltanian; X.L. Wang; C. Senatore; R. Flukiger; Marc M.J. Dhalle; O. Husnjak; E. Babic

doi:10.1103/PhysRevLett.98.097002

Mechanism of Enhancement in Electromagnetic Properties of MgB2 by Nano SiC Doping

S.X. Dou
, O. Shcherbakova
, W.K. Yeoh
, J.H. Kim
, S. Soltanian
, X.L. Wang
, C. Senatore
, R. Flukiger
, Marc M.J. Dhalle
, O. Husnjak
, E. Babic

Research output: Contribution to journal › Article › Academic

301 Citations (Scopus)

898 Downloads (Pure)

Abstract

A comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances Hc2, while the defects, small grain size, and nanoinclusions induced by C incorporation and low-temperature processing are responsible for the improvement in Jc. The irreversibility field (Hirr) for the SiC doped sample reached the benchmarking value of 10 T at 20 K, exceeding that of NbTi at 4.2 K. This dual reaction model also enables us to predict desirable dopants for enhancing the performance properties of MgB2.

Original language	Undefined
Pages (from-to)	097002
Journal	Physical review letters
Volume	98
Issue number	9
DOIs	https://doi.org/10.1103/PhysRevLett.98.097002
Publication status	Published - 2007

Keywords

IR-59107

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10.1103/PhysRevLett.98.097002

mechanism

Cite this

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title = "Mechanism of Enhancement in Electromagnetic Properties of MgB2 by Nano SiC Doping",

abstract = "A comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances Hc2, while the defects, small grain size, and nanoinclusions induced by C incorporation and low-temperature processing are responsible for the improvement in Jc. The irreversibility field (Hirr) for the SiC doped sample reached the benchmarking value of 10 T at 20 K, exceeding that of NbTi at 4.2 K. This dual reaction model also enables us to predict desirable dopants for enhancing the performance properties of MgB2.",

keywords = "IR-59107",

author = "S.X. Dou and O. Shcherbakova and W.K. Yeoh and J.H. Kim and S. Soltanian and X.L. Wang and C. Senatore and R. Flukiger and Dhalle, \{Marc M.J.\} and O. Husnjak and E. Babic",

year = "2007",

doi = "10.1103/PhysRevLett.98.097002",

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volume = "98",

pages = "097002",

journal = "Physical review letters",

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TY - JOUR

T1 - Mechanism of Enhancement in Electromagnetic Properties of MgB2 by Nano SiC Doping

AU - Dou, S.X.

AU - Shcherbakova, O.

AU - Yeoh, W.K.

AU - Kim, J.H.

AU - Soltanian, S.

AU - Wang, X.L.

AU - Senatore, C.

AU - Flukiger, R.

AU - Dhalle, Marc M.J.

AU - Husnjak, O.

AU - Babic, E.

PY - 2007

Y1 - 2007

N2 - A comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances Hc2, while the defects, small grain size, and nanoinclusions induced by C incorporation and low-temperature processing are responsible for the improvement in Jc. The irreversibility field (Hirr) for the SiC doped sample reached the benchmarking value of 10 T at 20 K, exceeding that of NbTi at 4.2 K. This dual reaction model also enables us to predict desirable dopants for enhancing the performance properties of MgB2.

AB - A comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances Hc2, while the defects, small grain size, and nanoinclusions induced by C incorporation and low-temperature processing are responsible for the improvement in Jc. The irreversibility field (Hirr) for the SiC doped sample reached the benchmarking value of 10 T at 20 K, exceeding that of NbTi at 4.2 K. This dual reaction model also enables us to predict desirable dopants for enhancing the performance properties of MgB2.

KW - IR-59107

U2 - 10.1103/PhysRevLett.98.097002

DO - 10.1103/PhysRevLett.98.097002

M3 - Article

SN - 0031-9007

VL - 98

SP - 097002

JO - Physical review letters

JF - Physical review letters

IS - 9

ER -